Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Lakshmi Kanta Bera, Navab Singh, Ze Yu Chen, Calvin Chua Hung Ming, King Jien Chui, Ravinder Pal Singh, Yee Ye Sheng, Surasit Chung, K. Michael Han, Ka Ren Chong, Dim Lee Kwong Metal-oxide-semiconductor capacitors with single and multi-layer high-K gate dielectrics on Si (0001) face of n-type 4H-SiC substrates have been investigated. Multi-layered nanolaminated gate-stack comprises alternating ultrathin (6nm) Al2O3 and HfO2. A 5nm thick interfacial silicon oxynitride is deposited prior to laminated films to investigate interface trap properties and tuning of flat band voltage. Total thickness of gate-stack films including interfacial layer is 55nm. The thermal stability of multi-layered nanolaminated film is investigated using XTEM. Localized crystallization of HfO2 is visible after RTA at 900°C while Al2O3 remains fully amorphous. Some of HfO2 grains have extended into Al2O3 layer but was not able to crossover. The measured accumulation capacitance of 55nm thick gate dielectric gives an effective dielectric constant value of 9.6 and an equivalent oxide thickness of 22nm from high-frequency capacitance-voltage measurements. A positive flat band voltage ( of 12.2V and 10.6V are observed from both single layer HfO2 and Al2O3 dielectrics, respectively due to presence of negatively charged oxygen interstitial defects generated during atomic layer deposition process. However, VFB shifted towards negative voltage-7.6V for multi-layered Al2O3/HfO2 stacks probably associated with positive Al and Hf interstitials at interface of Al2O3/HfO2. Ultrathin interfacial oxynitride films is effective to reduce Dit to 3×1011/eVcm2 and tuning of VFB. The breakdown field of stacked gate dielectric on 4H-SiC is 10.0 MV/cm.

Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks

Process-Induced Positive Charges in Hf-Based Gate Stacks

Impact of Gate Materials on Positive Charge Formation in HfO2∕SiO2 Stacks

On The Activation And Passivation Of Precursors For Process-Induced Positive Charges In Hf-Dielectric Stacks

Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Poststress Recovery Mechanism Of The Negative Bias Temperature Instability Based On Dispersive Transport

Current Conduction And Stability Of Ceo2/La2o3 Stacked Gate Dielectric

Fluorine IMP effect on negative bias temperature instability and process induced defects

Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

Multi-Layer High-K Gate Stack Materials for Low Dit 4H-SiC Based MOSFETs

An Assessment of the Location of As-Grown Electron Traps In$hboxhfo_2$/hfsio Stacks

Effects of Hydrogen on Positive Charges in Gate Oxides

Hydrogen Induced Positive Charge Generation in Gate Oxides

Interface Engineering Through Atomic Dopants in Hfo2-Based Gate Stacks

Impact Of Different Defects On The Kinetics Of Negative Bias Temperature Instability Of Hafnium Stacks

Threshold Voltage Instability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Hafnium Based Dielectrics

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack