Abstract:A novel gate and passivation dielectric stack consisting of a thin metal-organic chemical vapor deposition (MOCVD) grown <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 (3 nm) and a thick low-pressure chemical vapor deposition (LPCVD) grown Si 3 N 4 (30 nm) in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) is proposed. The quality of the Si 3 N 4 /(Al)GaN interface and the effect on threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) instability and dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> in the MIS-HEMTs with/without the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 layer are investigated by high-frequency capacitance-voltage (HFCV), quasi-static (QS) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> (QSCV), time-of-fly (TOF) stress/measure, and QS <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {D}}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {DS}}$ </tex-math></inline-formula> methods. It is founded that the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 interfacial layer is effective in improving the dielectric/III-N interface morphology. As a result, better <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> stability and lower <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON},\text {D}}/{R} _{ \mathrm{\scriptscriptstyle ON},\text {S}}$ </tex-math></inline-formula> ratio are observed in devices with the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 interfacial layer due to the reduced density of traps close to the dielectric/III-N interface. Time-dependent dielectric breakdown and Weibull performance further verified that the proposed bilayer gate dielectric stack is a promising structure for the high-reliability power transistors.

An Assessment of the Location of As-Grown Electron Traps In$hboxhfo_2$/hfsio Stacks

Electron trapping in HfO 2 layer deposited over a HF last treated silicon substrate

Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.

The identification of traps in HfO 2 -based FeFET with SiON as an interlayer using current transient method

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) Interface Trap State Reduction Via In-Situ N-2/H-2 RF Downstream Plasma Passivation

Dynamic Observation of Oxygen Vacancies in Hafnia Layer by in Situ Transmission Electron Microscopy

Spatial Identification Of Traps In Algan/Gan Heterostructures By The Combination Of Lateral And Vertical Electrical Stress Measurements

Probing the oxygen vacancy associated native defects in high-κ HfO2 using deep level transient spectroscopy

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Investigation of the Trap States and <inline-formula> <tex-math notation="LaTeX">$V_{\text{TH}}$ </tex-math></inline-formula> Instability in LPCVD Si<sub>3</sub>N<sub>4</sub>/AlGaN/GaN MIS-HEMTs with an <italic>In-Situ</italic> Si<sub>3</sub>N<sub>4</sub> Interfacial Layer

Investigation of Traps in HVPE Grown β-Ga2O3 Epilayers/n+-Ga2O3 using Deep Level Transient Spectroscopy

New Framework for the random charging/discharging of oxide traps in HfO2 gate dielectric: ab-initio simulation and experimental evidence

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory