Abstract:Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few decades, no other industry has seen growth even comparably close to that experienced by the semiconductors industry. This has all been made possible by the unbroken string of ingenious breakthroughs by brilliant minds that have been working tirelessly to shrink down transistors. The latest of which is the use of high-k dielectrics and a return to metal gates combined with 3D-transistor architectures. This has been the enabling technology for the transition from the 90 nm node to the 45 nm node, allowing us to shrink our transistors further without losing additional gate control. The fundamental reason for using a high-k gate dielectric compared to SiO2 is that shrinking our gate oxide further, which is already at a few angstroms, is no longer a feasible option to gain additional gate control. High-k dielectric overcome this by exploiting the fundamental physics of capacitors and the materials science of dielectrics to provide a viable option to increase gate control without the need for successively thinner gate oxides. Hafnium Oxide is the most studied and popular of such materials. Its high dielectric constant ~16-25 and interface stability with silicon at operating temperatures make it an ideal candidate for use in current CMOS technology. Despite its deceivingly simple appearance, the processes involved in the fabrication of such high-k HfO2/Si interfaces are full of process subtleties and nuances. In this term paper we hope to explore the physics and materials science of these high-k HfO2/Si interfaces, discussing the challenges and ways to overcome them when it comes to its actual fabrication, and how this ultimately affects our device performance.

Interface Engineering Through Atomic Dopants in Hfo2-Based Gate Stacks

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Recent Progress in Ab Initio Simulations of Hafnia-Based Gate Stacks

A Termination-Insensitive and Robust Electron Gas at the Heterointerface of Two Complex Oxides

Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack

Dipole-induced Modulation of Effective Work Function of Metal Gate in Junctionless FETs

First principles computational studies of high-k dielectric stacks for next generation transistors

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Dopant Compensation in Hfo2 and Other High K Oxides

An Investigation into the $HfO_2/Si$ Interface: Materials Science Challenges and their Effects on MOSFET Device Performance

Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor

Electronic and Atomic Structure of Metal-Hfo2 Interfaces

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics

Diluted Oxide Interfaces with Tunable Ground States

Impact of Gate Materials on Positive Charge Formation in HfO2∕SiO2 Stacks

Effective Work Function Engineering of <formula formulatype="inline"><tex>$\hbox{Ta}_{x}\hbox{C}_{y}$</tex></formula> Metal Gate on Hf-Based Dielectrics