Effective Work Function Engineering of <formula formulatype="inline"><tex>$\hbox{Ta}_{x}\hbox{C}_{y}$</tex></formula> Metal Gate on Hf-Based Dielectrics

F. Y. Yen,C. L. Hung,Y. T. Hou,P. F. Hsu,V. S. Chang,P. S. Lim,L. G. Yao,J. C. Jiang,H. J. Lin,C. C. Chen,yufeng jin,S. M. Jang,H. J. Tao,S. C. Chen,M. S. Liang

DOI: https://doi.org/10.1109/LED.2007.891271

IF: 4.8157

2007-01-01

IEEE Electron Device Letters

Abstract:This letter reports the engineering of effective work function (EWF) for tantalum carbide (TaC) metal gate on high-k gate dielectrics. The dependence of EWF on Si concentration in HfSiO as well as nitridation techniques is revealed. The EWF was extracted by both terraced oxide and terraced high-k techniques with the bulk and interface charges taken into account. The incorporation of Si in Hf-based dielectrics results in an increase of EWE, while the presence of N tends to decrease the EWE Plasma nitridation is found to be more effective in lowering the EWF than a thermal nitridation. The phenomena can be explained by the modification of TaC/high-k interface dipole moment, which arises from the electronegativity difference for various interface bonds. Based on the above findings, we proposed a novel approach to reduce the EWF of TaC on HfSiON by using a thin HfO2 cap layer after optimizing the nitridation. The MOSFET results show that this technique is able to achieve a lower V-t without degrading the device performance.