On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO/sub 2/ and poly-Si/TiN/HfSiON gate stacks
R. Singanamalla,H.Y. Yu,G. Pourtois,I. Ferain,K.G. Anil,S. Kubicek,T.Y. Hoffmann,M. Jurczak,S. Biesemans,K. De Meyer
DOI: https://doi.org/10.1109/led.2006.872916
IF: 4.8157
2006-05-01
IEEE Electron Device Letters
Abstract:The impact of TiN film thickness variations on the effective work function (WF) of poly-Si/TiN/SiO2 and poly-Si/TiN/HfSiON interfaces has been investigated. The electrical signatures of these gate stacks indicate that the concentration of Hf–Ti and Ti–Si bonds at the (poly-Si/TiN)/HfSiON and (poly-Si/TiN)/SiO2 interface plays a significant role on the control of the gate stacks' WF. The density of these interfacial bonds and the related work function changes are correlated to the degree of nucleation of the TiN film on the dielectric.
engineering, electrical & electronic
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