Abstract:Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 <a class="link-external link-http" href="http://neq.cm" rel="external noopener nofollow">this http URL</a>-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

First test beam measurement of the 4D resolution of an RSD pixel matrix connected to a FAST2 ASIC

First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC

Measurements and TCAD simulations of innovative RSD and DC-RSD LGAD devices for future 4D tracking

High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)

First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board

High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors

Resistive Read-out in Thin Silicon Sensors with Internal Gain

Machine learning for precise hit position reconstruction in Resistive Silicon Detectors

Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution

Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade

Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project

4-Dimensional Tracking with Ultra-Fast Silicon Detectors

A Two-Prong Approach to the Simulation of DC-RSD: TCAD and SPICE

First functionality tests of a 64 x 64 pixel DSSC sensor module connected to the complete ladder readout

First Production of New Thin 3D Sensors for HL-LHC at FBK

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and 90 Sr

Results for pixel and strip centimeter-scale AC-LGAD sensors with a 120 GeV proton beam

Digital Pixel Test Structures implemented in a 65 nm CMOS process

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process