Abstract:The world of photon science experiences significant advancements since the advent of synchrotron light sources with unprecedented brilliance, intensity and pulse repetition rates, with large implications on the detectors used for instrumentation. Here, an overview about the work on this field carried out at the semiconductor laboratory of the Max-Planck-Society (MPG HLL) is given. Main challenges are high dynamic range to resolve faint features at the fringes of scatter images as well as structures in bright peaks, and high bandwidth to fully exploit the fast timing capability of the source. A newly developed device to improve the signal-to-noise-ratio (SNR) at high bandwidths is the so-called MARTHA (Monolithic Array of Reach-Through Avalanche Photodiodes) structure, which integrates an array of APDs on a monolithic substrate. The reach-through architecture assures near 100% fill factor and allows implementing a thin entrance window with optimized quantum efficiency for low energy X-rays. The structures operate in proportional mode with adjustable gain, and can serve as a drop-in replacement for PAD detectors in hybrid pixel systems. A more sophisticated solution for low to medium frame rate applications with high contrast requirement are pnCCDs with high dynamic range in the pixel area featuring DEPFET based readout nodes with non-linear amplification (NLA). The high dynamic range mode has been demonstrated for pnCCD devices with a pixel size down to 75 μm 2 . Framerates of up to 1 kHz are possible for a 1 Megapixel detector. Small size prototypes of these structures have recently been manufactured. Modified DEPFET structures with build-in non-linear amplification are also used to implement active pixel detectors optimized for high dynamic range. Successfully prototyped for the DSSC sensors (DEPFET Sensor with Signal Compression) at the XFEL, these structures are increasingly being used in applications requiring high contrast and intensity, e.g., TEM imaging. Charge handling capability and output characteristics can be tailored to the requirements, as well as pixel geometry and size. The large intrinsic gain of the DEPFET provides excellent SNR even at fast timing. Pixels can be read with a speed of 100 ns, the resulting frame rate depends on the degree of readout parallelization.

Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

MiniCACTUS: A 65 ps Time Resolution Depleted Monolithic CMOS Sensor

A novel silicon pixel sensor for beam monitoring applications at heavy-ion accelerators

Test-beam and simulation studies for the CLICTD technology demonstrator -- a monolithic CMOS pixel sensor with a small collection diode

Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

Performance of the ATLASPix1 Pixel Sensor Prototype in Ams Ah18 CMOS Technology for the ATLAS ITk Upgrade

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer

Timepix3: single-pixel multi-hit energy-measurement behavior

Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project

M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

Novel sensor developments for photon science at the MPG semiconductor laboratory

A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70 μm pixel pitch

Digital Pixel Test Structures implemented in a 65 nm CMOS process

Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~μ$m pixel pitch

Characterization of a CMOS Pixel Sensor Prototype for the CEPC Vertex Detector

Results of the 2015 Testbeam of a 180 Nm AMS High-Voltage CMOS Sensor Prototype