Abstract:Abstract Applications at the High Luminosity LHC (HL-LHC) have required the development of a new generation of 3D pixel sensors with increased pixel granularity, extreme radiation hardness and low material budget. To this purpose, new 3D pixels have small pitch (e.g., 50×50 or 25×100 μm 2 ) and reduced active thickness (∼100 μm). Owing to the small inter-electrode spacing (∼28 μm in the most aggressive designs). These 3D pixels are expected to be radiation hard even after irradiation at the hadron fluences. Indeed, they are of interest for the innermost tracking layers of ATLAS and CMS (∼2×10 16 n eq cm −2 ), and beyond. In order to estimate the charge collection efficiency (CCE) after irradiation, TCAD simulations can be conveniently used, providing useful information for the optimization of sensor design and fabrication technology. Within the AIDA-2020 project, with reference to the new single-sided 3D technology from FBK (Trento, Italy), we have simulated the CCE of pixel sensors with different inter-electrode spacing irradiated at different fluences. For these simulations, a 2D domain was used, consisting of a horizontal slice taken at half the depth of a 3D sensor. Simulations consider the hit of a minimum ionizing particle, described by the Heavy Ion model at different points within the active area. In addition, bulk radiation damage is accounted by using advanced deep-level trap models. This paper reports a comprehensive description of the simulation results based on a radiation model validated by comparison to experimental results from n-in-p strip detectors at 248 K and 900 V bias.

Test-beam and simulation studies for the CLICTD technology demonstrator -- a monolithic CMOS pixel sensor with a small collection diode

The CLICTD Monolithic CMOS Sensor

CLICTD: A monolithic HR-CMOS sensor chip for the CLIC silicon tracker

Pixel detector R&D for the Compact Linear Collider

R&D for the CLIC Vertex and Tracking detectors

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator

Combining TCAD and Monte Carlo Methods to Simulate CMOS Pixel Sensors with a Small Collection Electrode using the Allpix Squared Framework

Digital Pixel Test Structures implemented in a 65 nm CMOS process

Subpixel Mapping and Test Beam Studies with a HV2FEI4v2 CMOS-Sensor-Hybrid Module for the ATLAS Inner Detector Upgrade

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

Beam Test of a Monolithic Active Pixel Sensor for the CEPC Vertex Detector

Technologies for Future Vertex and Tracking Detectors at CLIC

Beam test of a 180 nm CMOS Pixel Sensor for the CEPC vertex detector

Test Beam Measurement of Ams H35 HV-CMOS Capacitively Coupled Pixel Sensor Prototypes with High-Resistivity Substrate

First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process

Beyond the CMOS sensors: the DoTPiX pixel concept and technology for the International Linear Collider A

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade