Abstract:MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for future large scale timing detectors, like upgrades of timing detectors at LHC, or future high energy physics detector projects. The sensor features an active array of 2 x 4 diodes, analog and digital Front-Ends (FEs), a slow control interface, and bias circuitry programmable through internal DACs. The sensing element is a deep n-well/p-substrate diode. Thanks to the optimized guard-rings surrounding the whole chip, it is possible to apply safely more than 450 V on the high-resistivity substrate allowing fast charge collection. The baseline pixel dimensions are 1.0 mm x 1.0 mm and 0.5 mm x 1.0 mm. The analog FEs and the discriminators for each pixel are implemented outside the pixel, at the column level. The power consumption is approximately 300 mW/cm$\mathbf {^2}$, which is compatible with cooling infrastructure available at LHC experiments, and making integration of this concept viable in future high energy physics experiments. After fabrication, the sensors have been thinned to 100 $\mu$m, 200 $\mu$m and 300 $\mu$m total thickness and then post-processed for backside biasing. The time resolution of several sensors with different thicknesses has been measured in 3 test-beam campaigns using high energy muons (Minimum Ionizing Particles) at CERN SPS in 2021 and 2022. A resolution of 65.3 ps has been measured with on-chip FE and discriminator. This paper will focus on the results of these test-beam campaigns.

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

The CLICTD Monolithic CMOS Sensor

Test-beam and simulation studies for the CLICTD technology demonstrator -- a monolithic CMOS pixel sensor with a small collection diode

MiniCACTUS: A 65 ps Time Resolution Depleted Monolithic CMOS Sensor

Study of CMOS Strip Sensor for Future Silicon Tracker

Design, fabrication and initial test of a novel 3D-Trench sensor utilizing 8-inch CMOS compatible technology

Fully Depleted Monolithic Active Microstrip Sensors: TCAD simulation study of an innovative design concept

Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance

A New Method for Measuring Multilayer Thickness Using a Chromatic Confocal Sensor

Combining TCAD and Monte Carlo Methods to Simulate CMOS Pixel Sensors with a Small Collection Electrode using the Allpix Squared Framework

CLICTD: A monolithic HR-CMOS sensor chip for the CLIC silicon tracker

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

Test Beam Measurement of Ams H35 HV-CMOS Capacitively Coupled Pixel Sensor Prototypes with High-Resistivity Substrate

Study of Built-in Amplifier Performance on HV-CMOS Sensor for the ATLAS Phase-Ii Strip Tracker Upgrade

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

On the performance of large monolithic LaCl3(Ce) crystals coupled to pixelated silicon photosensors

Simulation of Monolithic Active Pixel Sensor with High Resistivity Epitaxial Layer

Characterization of passive CMOS sensors with RD53A pixel modules