Abstract:We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 <a class="link-external link-http" href="http://Ohm.cm" rel="external noopener nofollow">this http URL</a> P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.

Test Beam Measurement of Ams H35 HV-CMOS Capacitively Coupled Pixel Sensor Prototypes with High-Resistivity Substrate

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Subpixel Mapping and Test Beam Studies with a HV2FEI4v2 CMOS-Sensor-Hybrid Module for the ATLAS Inner Detector Upgrade

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

Study of Built-in Amplifier Performance on HV-CMOS Sensor for the ATLAS Phase-Ii Strip Tracker Upgrade

Characterization of passive CMOS sensors with RD53A pixel modules

Investigation of HV/HR-CMOS Technology for the ATLAS Phase-II Strip Tracker Upgrade

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

High-Voltage Pixel Sensors for Atlas Upgrade

Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Radiation Hardness of Two CMOS Prototypes for the ATLAS HL-LHC Upgrade Project.

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer

Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment

Radiation-Hard Active Pixel Sensors for Hl-Lhc Detector Upgrades Based on Hv-Cmos Technology

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

Beam Test of a Monolithic Active Pixel Sensor for the CEPC Vertex Detector

Study of CMOS Strip Sensor for Future Silicon Tracker