Abstract:The exceptional performance of the silicon sensors in the radiation environment has led to their extensive application in high energy physics. Even so, the future experiments foresee these sensors to be exposed to higher radiation levels. Radiation induces a change in the macroscopic properties of the sensor, thus, severely affecting the sensor performance and ultimately becoming the limiting factor for its operation. With an aim to extend the radiation hardness capabilities of the silicon sensors for the future experiments there has been a growing interest in sensors with novel designs and unique characteristic of intrinsic charge multiplication. However, it is important to understand the effect of radiation damage on these sensors, before employing them in the main detector system. The RD50 collaboration extensively employs TCAD simulation tools for an in-depth understanding and structural optimization of the newly proposed sensor technologies, complementing the measurement results. The simulation package, by the finite element method, solves the Poisson equation coupled with the current continuity equations in the main device, typically with the drift-diffusion current model. There is also the possibility of co-simulating an electronic circuit connected to the main device using the incorporated SPICE package, for example to predict single event effects or read-out related waveforms. The simulation tools also provide an insight into the sensor operation both in the non-irradiated and the irradiated scenario in order to predict the voltage dependence of the leakage current, charge collection and electrical field distribution as function of irradiation. This has required the development of a radiation damage model within the simulation tools such that the measurements are well reproduced. The details of the radiation damage modelling using two commercial TCAD tools Silvaco and Synopsys, are discussed in this work.

A Two-Prong Approach to the Simulation of DC-RSD: TCAD and SPICE

Measurements and TCAD simulations of innovative RSD and DC-RSD LGAD devices for future 4D tracking

High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)

Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution

First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board

Resistive Read-out in Thin Silicon Sensors with Internal Gain

Machine learning for precise hit position reconstruction in Resistive Silicon Detectors

First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC

High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors

Design of AC-coupled Low Gain Avalanche Diodes (Ac-Lgads): a 2D TCAD Simulation Study

TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review

First test beam measurement of the 4D resolution of an RSD pixel matrix connected to a FAST2 ASIC

A new model of step recovery diode for CAD

Radiation Damage Modelling: TCAD Simulation

TCAD Simulation of Novel Semiconductor Devices

TCAD simulations of silicon strip and pixel sensor optimization

Fully Depleted Monolithic Active Microstrip Sensors: TCAD simulation study of an innovative design concept

TCAD simulation of AC-LGADs

TCAD modeling of bulk radiation damage effects in silicon devices with the Perugia radiation damage model

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors