Abstract:Many industrial and scientific applications, ranging from 3D imaging (such as LIDAR, surveillance, object tracking) to Time Correlated Single Photon Counting (TCSPC), require the ability to perform time-resolved detection of weak light signals, down to single-photon level. Single-Photon Avalanche Diodes are solid-state detectors capable of single-photon sensitivity in the visible and near-infrared wavelength regions and compatible with standard silicon processes. This demand driven the development of low cost, large size CMOS SPAD imagers. In this work we present the design and characterization of a time-gated 32x32 SPAD image sensor fabricated in a 0.16 μm BCD (Bipolar-CMOS-DMOS) technology. The sensor is based on an innovative 16x16 macropixel structure, each composed by four SPADs with independent sensing front-end and event counters, plus a shared Timeto- Digital Converter (TDC). This approach enables higher fill-factor (9.6% with a pixel pitch of 100 μm) by sharing the costly (in terms of area) TDC resource, as well as reduced power dissipation. The imager provides simultaneous photon-timing and photon-counting data and features a 12 bit, 75 ps bin width TDC, which can perform one conversion per each gate window, with up to 62 windows per data readout frame. Two main operation modes are available: a single-photon mode, where an arbitration circuit within the macropixel is used to share the TDC among the 4 SPADs, but with no loss of X-Y resolution (i.e. keeping information about the triggered SPAD); and a two-photon-coincidence mode, where the TDC performs a conversion only if two SPADs of the macropixel are triggered within a preset coincidence window. Lastly, the sensor features multiple readout modes, with varying amount of output data, in order to fit different end-user applications. The imager is capable of 100 kfps (frames per second) in full readout mode, and up to 400 kfps in a reduced data set mode.

First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board

Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution

Measurements and TCAD simulations of innovative RSD and DC-RSD LGAD devices for future 4D tracking

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High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)

First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC

Resistive Read-out in Thin Silicon Sensors with Internal Gain

First test beam measurement of the 4D resolution of an RSD pixel matrix connected to a FAST2 ASIC

Machine learning for precise hit position reconstruction in Resistive Silicon Detectors

A 16-Channel Analog CMOS SiPM with On-Chip Front-End for D-ToF LiDAR

A Two-Prong Approach to the Simulation of DC-RSD: TCAD and SPICE

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

Fabrication and Characterization of Two-Dimensional Pin-Cushion Position Sensitive Detectors

Long-distance signal propagation in AC-LGAD

First investigation of a novel 2D position-sensitive semiconductor detector concept

A Fingertip-Mimicking 12×16 200μm-Resolution e-skin Taxel Readout Chip with per-Taxel Spiking Readout and Embedded Receptive Field Processing

Time-gated SPAD camera with reconfigurable macropixels for LIDAR applications

Design optimization of the UFSD inter-pad region

Exploring the Interpad Gap Region in Ultra-Fast Silicon Detectors: Insights into Isolation Structure and Electric Field Effects on Charge Multiplication

First results on monolithic CMOS detector with internal gain