Characterization of iLGADs using soft X-rays
Antonio Liguori,Rebecca Barten,Filippo Baruffaldi,Anna Bergamaschi,Giacomo Borghi,Maurizio Boscardin,Martin Brückner,Tim Alexander Butcher,Maria Carulla,Matteo Centis Vignali,Roberto Dinapoli,Simon Ebner,Francesco Ficorella,Erik Fröjdh,Dominic Greiffenberg,Omar Hammad Ali,Shqipe Hasanaj,Julian Heymes,Viktoria Hinger,Thomas King,Pawel Kozlowski,Carlos Lopez-Cuenca,Davide Mezza,Konstantinos Moustakas,Aldo Mozzanica,Giovanni Paternoster,Kirsty A. Paton,Sabina Ronchin,Christian Ruder,Bernd Schmitt,Dhanya Thattil,Xiangyu Xie,Jiaguo Zhang
DOI: https://doi.org/10.1088/1748-0221/18/12/P12006
2023-10-23
Abstract:Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing the signal-to-noise ratio and allowing single photon detection below $1$keV using hybrid detectors. In addition, an optimization of the entrance window of these sensors enhances their quantum efficiency (QE). In this work, the QE and the gain of a batch of different iLGAD diodes with optimized entrance windows were characterized using soft X-rays at the Surface/Interface:Microscopy beamline of the Swiss Light Source synchrotron. Above $250$eV, the QE is larger than $55\%$ for all sensor variations, while the charge collection efficiency is close to $100\%$. The average gain depends on the gain layer design of the iLGADs and increases with photon energy. A fitting procedure is introduced to extract the multiplication factor as a function of the absorption depth of X-ray photons inside the sensors. In particular, the multiplication factors for electron- and hole-triggered avalanches are estimated, corresponding to photon absorption beyond or before the gain layer, respectively.
Instrumentation and Detectors