Abstract:In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $\mu$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $\mu$m $\times$ 250 $\mu$m and includes a high-speed front-end amplifier. After describing the sensor and the electronics architecture, both laboratory and in-beam measurements are reported and described. Optical characterisations performed with an IR pulsed laser setup have shown a sensor internal gain of about 2.5. With the same experimental setup, the electronic jitter was found to be between 50 ps and 150 ps, depending on the signal amplitude. Moreover, the analysis of a test beam performed at the Proton Synchrotron (PS) T10 facility of CERN with 10 GeV/c protons and pions indicated that the overall detector time resolution is in the range of 234 ps to 244 ps. Further TCAD investigations, based on the doping profile extracted from $C(V)$ measurements, confirmed the multiplication gain measured on the test devices. Finally, TCAD simulations were used to tune the future doping concentration of the gain layer implant, targeting sensors with a higher avalanche gain. This adjustment is expected to enhance the timing performance of the sensors of the future productions, in order to cope with the high event rate expected in most of the near future high-energy and high-luminosity physics experiments, where the time resolution will be essential to disentangle overlapping events and it will also be crucial for Particle IDentification (PID).

Overview of CNM LGAD results: Boron Si-on-Si and epitaxial wafers

Gain and time resolution of 45 $μ$m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of $10^{15}$ n$_{eq}$/cm$^2$

Impact of Neutron Irradiation on LGADs with a Carbon-Enriched Shallow Multiplication Layer: Degradation of Timing Performance and Gain

Comprehensive technology study of radiation hard LGADs

Design and testing of LGAD sensor with shallow carbon implantation

Radiation resistant LGAD design

Gain suppression mechanism observed in Low Gain Avalanche Detectors

TCAD simulation of AC-LGADs

Beam Test Results of NDL Low Gain Avalanche Detectors (LGAD)

Radiation Hardness of Thin Low Gain Avalanche Detectors

Gain layer degradation study after neutron and proton irradiations in Low Gain Avalanche Diodes

Performance in beam tests of Carbon-enriched irradiated Low Gain Avalanche Detectors for the ATLAS High Granularity Timing Detector

Gain suppression study on LGADs at the CENPA tandem accelerator

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10$^{15}$ n$_\mathrm{eq}$cm$^{-2}$

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10 15 n eq cm -2

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

Design of AC-coupled Low Gain Avalanche Diodes (Ac-Lgads): a 2D TCAD Simulation Study

Design and Fabrication of an Optimum Peripheral Region for Low Gain Avalanche Detectors

Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors

First results on monolithic CMOS detector with internal gain