Abstract:Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

Gain suppression study on LGADs at the CENPA tandem accelerator

Gain suppression mechanism observed in Low Gain Avalanche Detectors

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10$^{15}$ n$_\mathrm{eq}$cm$^{-2}$

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10 15 n eq cm -2

Radiation Hardness of Thin Low Gain Avalanche Detectors

Performance in beam tests of Carbon-enriched irradiated Low Gain Avalanche Detectors for the ATLAS High Granularity Timing Detector

Gain layer degradation study after neutron and proton irradiations in Low Gain Avalanche Diodes

Overview of CNM LGAD results: Boron Si-on-Si and epitaxial wafers

Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

Design and testing of LGAD sensor with shallow carbon implantation

Design and Fabrication of an Optimum Peripheral Region for Low Gain Avalanche Detectors

A Two-Dimensional Characterization of Low-Gain Avalanche Diodes for Low-LET Microdosimetry

Gain and time resolution of 45 $μ$m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of $10^{15}$ n$_{eq}$/cm$^2$

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

Design and development of Low Gain Avalanche Detectors using Teledyne e2v process

Beam Test Results of NDL Low Gain Avalanche Detectors (LGAD)

Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Laboratory and beam-test performance study of a 55$~μ$m pitch iLGAD sensor bonded to a Timepix3 readout chip

First Results for the pLGAD Sensor for Low-Penetrating Particles

TCAD simulation of AC-LGADs