Abstract:The AMD UltraScale+ XCZU9EG device is a Multi-Processor System-on-Chip (MPSoC) with embedded Programmable Logic (PL) that excels in many Edge (e.g., automotive or avionics) and Cloud (e.g., data centres) terrestrial applications. However, it incorporates a large amount of SRAM cells, making the device vulnerable to Neutron-induced Single Event Upsets (NSEUs) or otherwise soft errors. Semiconductor vendors incorporate soft error mitigation mechanisms to recover memory upsets (i.e., faults) before they propagate to the application output and become an error. But how effective are the MPSoC's mitigation schemes? Can they effectively recover upsets in high altitude or large scale applications under different workloads? This article answers the above research questions through a solid study that entails accelerated neutron radiation testing and dependability analysis. We test the device on a broad range of workloads, like multi-threaded software used for pose estimation and weather prediction or a software/hardware (SW/HW) co-design image classification application running on the AMD Deep Learning Processing Unit (DPU). Assuming a one-node MPSoC system in New York City (NYC) at 40k feet, all tested software applications achieve a Mean Time To Failure (MTTF) greater than 148 months, which shows that upsets are effectively recovered in the processing system of the MPSoC. However, the SW/HW co-design (i.e., DPU) in the same one-node system at 40k feet has an MTTF = 4 months due to the high failure rate of its PL accelerator, which emphasises that some MPSoC workloads may require additional NSEU mitigation schemes. Nevertheless, we show that the MTTF of the DPU can increase to 87 months without any overhead if one disregards the failure rate of tolerable errors since they do not affect the correctness of the classification output.

LELAPE: An Open-Source Tool to Classify SEUs According to Their Multiplicity in Radiation-Ground Tests on Memories

Nuclear elastic scattering of protons below 250 MeV in FLUKA v4-4.0 and its role in single-event-upset production in electronics

Investigation of Single-Event Effects for Space Applications: Instrumentation for In-Depth System Monitoring

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC

SEU ground and flight data in static random access memories

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Deja-Vu: A Glimpse on Radioactive Soft-Error Consequences on Classical and Quantum Computations

Design and Verification of Multiple SEU Mitigated Circuits on SRAM-based FPGA System

SSRESF: Sensitivity-aware Single-particle Radiation Effects Simulation Framework in SoC Platforms based on SVM Algorithm

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Single Event Effects Assessment of UltraScale+ MPSoC Systems under Atmospheric Radiation

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Investigation of the Impact of Angles and Rotation of Low Energy Protons in SRAM Cells Down to 16nm

Measurement of Neutron-induced Single Event Upset Cross-Section of UltraScale Kintex FPGA Using Time-of-Flight Technique

Design and Verification of Universal Evaluation System for Single Event Effect Sensitivity Measurement in Very-Large-scale Integrated Circuits

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

Quantification of Neutron-Induced Single-Event Upsets in a Static Random-Access Memory by Clinical High-Energy Photon Beam

Role of Elastic Scattering in Low-Energy Neutron-Induced SEUs in a 40-Nm Bulk SRAM

Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability