Abstract:It is commonly believed that the impact of the top electrodes on the ferroelectricity of hafnium-based thin films is due to strain engineering. However, several anomalies have occurred that put existing theories in doubt. This work carries out a detailed study of this issue using both theoretical and experimental approaches. The 10 nm Hf0.5Zr0.5O2 (HZO) films are prepared by atomic layer deposition, and three different top capping electrodes (W/MO/ITO) are deposited by physical vapor deposition. The electrical testing finds that the strain does not completely control the ferroelectricity of the devices. The results of further piezoelectric force microscopy characterization exclude the potential interference of the top capping electrodes and interface for electrical testing. In addition, through atomic force microscopy characterization and statistical analysis, a strong correlation between the grain size of the top electrode and the grain size of the HZO film has been found, suggesting that the grain size of the top electrode can induce the formation of the grain size in HZO thin films. Finally, the first-principles calculation is carried out to understand the impact of the strain and grain size on the ferroelectric properties of HZO films. The results show that the strain is the dominant factor for ferroelectricity when the grain size is large (>10 nm). However, when the grain size becomes thinner (<10 nm), the regulation effect of grain sizes increases significantly, which could bring a series of benefits for device scaling, such as device-to -device variations, film uniformity, and domain switch consistency. This work not only completes the understanding of ferroelectricity through top electrode modulation but also provides strong support for the precise regulation of ferroelectricity of nanoscale devices and ultrathin HZO ferroelectric films.

Stress Effects of Interconnecting Metals on Back-End-of-Line Compatible Hf 0.5 Zr 0.5 O 2 Ferroelectric Capacitors

The effect of stress on HfO<sub>2</sub>-based ferroelectric thin films: A review of recent advances

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2P R of 39.6 Μc/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1- x O 2

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films

Back-End of Line Compatible Hf 0.5 Zr 0.5 O 2 with ZrO 2 Seed Layer for Enhanced Ferroelectricity

Integration of Volume Change Liner Stressor on Ferroelectric Capacitors and FeFETs: Simulation and Electrical Characterization

Back-End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity

Effects of Electrodes on Antiferroelectricity and Fatigue Endurance of Hf0.2Zr0.8O2 Thin Films

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers