Abstract:Ferroelectric (FE) materials, which typically adopt the perovskite structure with non-centrosymmetry and exhibit spontaneous polarization, are promising for applications in memory, electromechanical and energy storage devices. However, these advanced applications suffer from the intrinsic limitations of perovskite FEs, including poor complementary metal oxide semiconductor (CMOS) compatibility and environmental issues associated with lead. Hafnium oxide (HfO2), with stable bulk centrosymmetric phases, possesses robust ferroelectricity in nanoscale thin films due to the formation of non-centrosymmetric phases. Owing to its high CMOS compatibility and high scalability, HfO2 has attracted significant attention. In the last decade, significant efforts have been made to explore the origin of the ferroelectricity and factors that influence the FE properties in HfO2 films, particularly regarding the role of microstructure, which is vital in clarifying these issues. Although several comprehensive reviews of HfO2 films have been published, there is currently no review focused on the relationship between microstructure and FE properties. This review focuses on the microstructure-property relationships in FE polycrystalline and epitaxial HfO2 films. The crystallographic structures and characterization methods for HfO2 polymorphs are first discussed. For polycrystalline HfO2 films, the microstructure-FE properties relationships, driving force and kinetic pathway of phase transformations under growth parameters or external stimuli are reviewed. For epitaxial films, the lattice matching relations between HfO2 films and substrates and the corresponding impact on the FE properties are discussed. The FE properties between polycrystalline and epitaxial HfO2 films are compared based on their different microstructural characteristics. Finally, a future perspective is given for further investigating FE HfO2 films.

The effect of stress on HfO<sub>2</sub>-based ferroelectric thin films: A review of recent advances

Disentangling stress and strain effects in ferroelectric HfO2

Understanding the Stress Effect of TiN Top Electrode on Ferroelectricity in Hf0.5Zr0.5O2 Thin Films

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf0.5Zr0.5O2 Thin Films

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Stress effects in ferroelectric thin films

Study On Stress Of The Films Applied To Feram

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Stress Effects of Interconnecting Metals on Back-End-of-Line Compatible Hf 0.5 Zr 0.5 O 2 Ferroelectric Capacitors

Effect of stress on ferroelectric properties in flexible BiFe0.97Cr0.03O3/BiFe1−xMnxO3 composite thin films

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

The contradiction between thermodynamic and kinetic effects of stress-modulated antiferroelectricity in ZrO2 thin films

Recent Progress and Applications of HfO2-Based Ferroelectric Memory

Microstructural evolution and ferroelectricity in HfO2 films