Abstract:The paper reviews the latest advances in the growth of epitaxial SiC films on Si by the coordinated atomic substitution method. The conceptual issues and procedure of the new method for synthesizing epitaxial SiC films on Si are described. It is shown that this method significantly differs from the classical thin film growth schemes. Film growth in accordance with the classical mechanism is provided by deposition of atoms on the surface of a substrate. The new method consists in the coordinated atomic substitution of a portion of the atoms of the silicon matrix by carbon atoms to form an epitaxial silicon carbide film. The new growth method is compared with the classical thin film growth mechanisms. It is shown that the main distinctive feature of SiC films synthesized by this method is the formation of an excess concentration of silicon vacancies in it, whereas SiC grown by the standard methods comprises mostly carbon vacancies. It is shown that the interaction of carbon atoms and silicon vacancies leads to the formation of ordered ensembles of carbon–vacancy structures in SiC layers grown by the coordinated atomic substitution method. The formation of these structures is attributed to both the occurrence of a chemical substitution reaction and the contraction of the Si lattice cell during the transformation of it into a SiC lattice cell. The presence of carbon–vacancy structures in SiC imparts a number of new unique properties to the silicon carbide. In particular, a Si layer exhibiting the electronic properties of a "semimetal" is formed at the SiC–Si interface. In addition, carbon–vacancy structures provide unique optical, electrical, and magnetic properties. In particular, two quantum effects—a hysteresis of the static magnetic susceptibility and the occurrence of Aharonov–Bohm oscillations in the field dependences of the static magnetic susceptibility—are found to occur in weak magnetic fields at room temperature. The first of the effects is associated with the Meissner–Ochsenfeld effect; the second is associated with the presence of carbon–vacancy structures and microdefects in the form of nanotubes and micropores formed in these structures during SiC synthesis under the SiC layer.

Elastic Energy Relaxation in the Chemical Reaction of CO with Single-Crystalline Silicon during Coordinated Substitution of Atoms

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

Ab initio study of the mechanism of carbonization of {111} Si-substrate at high temperature

Stress Relaxation Behaviors of Monocrystalline Silicon Coated with Amorphous SiO _2 Film: A Molecular Dynamics Study

Mechanism of SiC formation by Si surface carbonization using CO gas

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2

Study on the solid state reaction between crystalline Co film and Si(1 1 1) substrate

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Revisiting single-crystal silicon oxidation: A comprehensive analysis of crystal structural transformation to SiO2

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

Vapor-Solid Reaction for Silicon Carbide Hollow Spherical Nanocrystals

Carbon monoxide adsorption on cobalt overlayers on a Si(111) surface studied by STM and XPS

Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

High-Temperature Raman Spectroscopy of Nano-Crystalline Carbon in Silicon Oxycarbide

Carbon monoxide adsorption on cobalt overlayers on a Si(1 1 1) surface studied by STM and XPS

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Chemical Reactions in the Co–Si–C System

Reactions Of Silicon Atoms And Small Clusters With Co: Experimental And Theoretical Characterization Of Sinco (N=1-5), Si-2(Co)(2), C-Si-2(Mu-O)(Mu-Csi), And C-Si-2(Mu-O)(Mu-Cco) In Solid Argon