Abstract:In this study, we revisit the oxidation reactions of a single-crystal silicon wafer and compare the reported crystal structures of the formed oxides with the original diamond structure of single-crystal silicon. It is commonly assumed that interstitial silicon atoms are always emitted during oxidation at the reactive interface between silicon and the formed oxide due to volume differences. However, it is important to acknowledge that this phenomenon may not always be observed. Thermal equilibrium studies have revealed that a certain percentage of silicon atoms in the diamond structure remains even after surface oxidation [Kamiyama and Sueoka, J. Appl. Phys. 134, 115301 (2023)]. These retained silicon atoms undergo a transformation into a different crystal structure, presenting as β-cristobalite (space group: P41212) rather than the anticipated non-ideal cristobalite (space group: Fd-3m). Our ab initio calculations indicated that the latter remains stable next to a quartz-based structure, exhibiting optimal compatibility with the Si (001) surface. This quartz-based structure is formed through the emission of a Si atom during the oxidation of single-crystal silicon, finally forming a quartz/Si (001) interface. Therefore, we propose a coexisting model involving an alternative β-cristobalite and a quartz crystal structure originating from the surface oxidation of single-crystal silicon. This model offers an explanation for why thermally oxidized films derived from single-crystal silicon exhibit an amorphous nature. In addition, studies have revealed that the oxide precipitates observed in Si crystals are cristobalite and coesite. Hence, the qualitative differences in SiO2/Si interfaces between surface and internal oxidations in metal-gettering effectivity shown in experimental literature require clarification. We also discuss the conditions that prevent the emission of Si atoms.

Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Revisiting single-crystal silicon oxidation: A comprehensive analysis of crystal structural transformation to SiO2

Oxygen Annealing Behavior in Multicrystalline Silicon

Oxygen Diffusion in Silicon: The Influence of Hydrogen

Early Stages of Oxygen Precipitation in Silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Formation Mechanism of Zn2SiO4crystal and Amorphous SiO2in ZnO/Si System

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Thermally Induced Structural Evolution of Silicon- and Oxygen-Containing Hydrogenated Amorphous Carbon: A Combined Spectroscopic and Molecular Dynamics Simulation Investigation.

Atomic-resolution imaging of electrically induced oxygen vacancy migration and phase transformation in SrCoO2.5-σ

Dynamic Phase Transformation Of Crystalline Silicon Under The Dry And Wet Impact Studied By Molecular Dynamics Simulation

Impurity Oxygen-Triggered α- → β-Si3N4 Phase Transformation at 1900 °C