Abstract:Conventional silicon (Si) wafers are produced by energy‐intensive ingot crystallization which is responsible for a major share of a solar cell's carbon footprint. Our work explores Si EpiWafers that are produced by direct epitaxial deposition of trichlorosilane on a re‐usable substrate. This approach requires less energy and material and hence offers a potential for reduced cost and carbon footprint. Solar cells made from EpiWafers usually suffer from efficiency losses due to recombination at structural crystal defects associated with epitaxial growth. We investigated the nature of these defects and observed that defects at the EpiWafer's back surface are critical. Most of these defects are highly recombination‐active, pairwise‐connected misfit dislocations in the ‐direction. They originate from a lattice mismatch between the highly‐doped substrate and the less‐doped epitaxially grown layer. In this contribution, we demonstrate that the detrimental impact of these defects can be mitigated using typical manufacturing processes of high‐efficiency solar cells, such as KOH‐etching, gettering and oxidation. We report local minority charge carrier lifetimes as high as 2.2 ms after industrially feasible processes. Simulations using efficiency limiting bulk recombination analysis (ELBA) imply that the material would allow conversion efficiencies of up to 25.6 % considering a TOPCoRE solar cell design. TOC: Epitaxially grown silicon wafers (EpiWafers) are a promising alternative to Cz‐Si wafers for highly efficient solar cells with a low carbon footprint. For p‐type EpiWafers, we report minority charge carrier lifetimes as high as 2.2 ms and an efficiency potential of 25.6 %. Structural defects, as a remaining quality limitation in the EpiWafer, are discussed with respect to the effect of KOH‐etching, gettering, and oxidation. This article is protected by copyright. All rights reserved.

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