Growth of Zinc-Blende/Wurtzite Polytypic InP on Epitaxial Graphene

O.,M. Arnold,J. Arbiol,Moutanabbir,R. Jacobberger,P. Desjardins,Swarnava Mukherjee,R. Martel,N. Nateghi,M. Mata,É. Bouthillier,T. Coenen,D. Cardinal,P. Levesque
Abstract:: van der Waals epitaxy is an attractive alternative to direct heteroepitaxial growth of semiconductor materials where the forced coherency at the interface cannot sustain large differences in lattice parameters and thermal expansion coefficients between the substrate and the epilayer. In this work, we demonstrate the growth of monocrystalline InP on Ge and SiO 2 /Si substrates using graphene as an interfacial layer. Micron-sized InP crystals were found to grow with interfaces of high crystalline quality. Depending on the growth conditions, these crystals coalesce to form continuous film-like structures. This coalescence is more pronounced on as-grown graphene layers as compared to transferred ones. Some InP crystals were found to possess a polytypic structure, consisting of zinc-blende and wurtzite phases. We demonstrate that the zinc-blende and wurtzite close packed structures form a type-II homojunction with well (barrier) width of about 10 nm. The optical properties, investigated using room temperature nanocathodoluminescence, indicated the signatures of the direct optical transitions at 1.34 eV across the gap of the zinc-blende phase and the indirect transitions at ~1.31 eV originating from the close packed phase. In addition to crystals, we also observed InP nanorods growing mainly on graphene transferred onto SiO 2 /Si substrate. These nanorods showed optical transition across the gap of the wurtzite phase at ~1.42 eV . This demonstration of InP direct growth on graphene and the correlative study between the structure and optical properties pave the way to develop InP-graphene hybrid structures for potential applications in integrated photonic and optoelectronic devices.
Engineering,Materials Science,Physics
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