Single-crystalline van der Waals layered dielectric with high dielectric constant
Congcong Zhang,Teng Tu,Jingyue Wang,Yongchao Zhu,Congwei Tan,Liang Chen,Mei Wu,Ruixue Zhu,Yizhou Liu,Huixia Fu,Jia Yu,Yichi Zhang,Xuzhong Cong,Xuehan Zhou,Jiaji Zhao,Tianran Li,Zhimin Liao,Xiaosong Wu,Keji Lai,Binghai Yan,Peng Gao,Qianqian Huang,Hai Xu,Huiping Hu,Hongtao Liu,Jianbo Yin,Hailin Peng
DOI: https://doi.org/10.1038/s41563-023-01502-7
IF: 41.2
2023-03-10
Nature Materials
Abstract:The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel 1,2 . For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration 1,2 . However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant ( κ ) dielectric with an atomically flat and dangling-bond-free surface 3,4 . Here, we report a facile synthesis of a single-crystalline high- κ ( κ of roughly 16.5) van der Waals layered dielectric Bi 2 SeO 5 . The centimetre-scale single crystal of Bi 2 SeO 5 can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 μm 2 and as thin as monolayer. With these Bi 2 SeO 5 nanosheets as dielectric and encapsulation layers, 2D materials such as Bi 2 O 2 Se, MoS 2 and graphene show improved electronic performances. For example, in 2D Bi 2 O 2 Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm 2 V −1 s −1 at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter