Abstract:Nanostructured bismuth oxyselenide (Bi2O2Se) semiconductor, a two-dimensional (2D) materials with high-mobility, air-stability, and tunable bandgap, has recently emerged as a candidate of channel material for future digital (electronic and optoelectronic) applications. In terms of material morphology, some basic issues will be addressed when a two-dimensional layered crystal is shaped into a one-dimensional (1D) geometry due to size effect; these include the space-confined transport in a plane, which leads to dramatic changes in electronic, optical, and thermal properties. These novel 1D nanostructures with unique properties are an optimal choice for fabricating next-generation integrated circuits and functional devices within the nanometer scale such as gate-all-around field-effect transistors, single-electron transistors, chemical sensors, and THz detectors. As one of the high-mobility 2D semiconductor, 1D high-quality Bi2O2Se nanoribbons could be promising for applications in high-performance transistors; however, their synthesis has not been completely developed yet. In our study, we report on the facile growth of Bi2O2Se nanoribbons on mica substrates via a bismuth-catalyzed vapor-liquid-solid (VLS) mechanism. The preparation of Bi2O2Se nanoribbons is based on a previous work that emphasized on the oxidation of Bi2Se3 in a chemical vapor deposition (CVD) system and the use of bismuth (Bi) particles as the precursor of Bi catalysis. The morphology, composition, and structure of the as-grown Bi2O2Se nanoribbons were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), as well as other methods. For a Bi mediated VLS growth process, the growth of Bi2O2Se nanoribbons can be self-assembled; further, in this process, as-grown epitaxial Bi2O2Se nanoribbons are free-standing with out-of-plane morphology on the mica substrate. Additionally, combining the spherical aberration corrected transmission electron microscope (ACTEM) and selected electron diffraction (SAED) methods, we discovered that the as-synthesized Bi2O2Se nanoribbons were single crystalline with high quality. We further investigated the controllable growth for domain size by optimizing the growth temperature of the Bi2O2Se nanoribbons. As-synthesized single-crystal Bi2O2Se nanoribbons have widths in the range of 100 nm to 20 mu m and lengths in the sub-millimeter range. By employing a polymer poly(methyl methacrylate) (PMMA) assisted clean transfer method with the assistance of deionized water, the Bi2O2Se nanoribbons can be easily transferred onto a SiO2/Si substrate. Fabricated into the top-gated field-effect device, the Bi2O2Se nanoribbon sample (transferred to the SiO2/Si substrate) exhibited high electronic performances; these included a high electron mobility of similar to 220 cm(2).V-1.s(-1) at room temperature, good switching behavior with on/off ratio of >10(6), and high on current density of similar to 42 mu A.mu m(-1) at a channel length of 10 mu m. Therefore, Bi2O2Se nanoribbons are expected to be a promising materials for building high-performance transistors in the future.

Low-Temperature and High-Quality Growth of Bi2O2Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se:Controllability and Material Quality

Salt‐Assisted Low‐Temperature Growth of 2D Bi2O2Se with Controlled Thickness for Electronics

High Mobility Two-Dimensional Bismuth Oxyselenide Single Crystals with Large Grain Size Grown by Reverse-Flow Chemical Vapor Deposition

Transfer-Free Growth of Bi<sub>2</sub>O<sub>2</sub>Se on Silicon Dioxide via Chemical Vapor Deposition

Direct Growth of Bi2SeO5 Thin Films for High-k Dielectrics via Atomic Layer Deposition

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films.

Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors.

Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi$_2$O$_2$Se Films

Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi_2O_2Se Films

2D Bi2O2Se: an Emerging Material Platform for the Next-Generation Electronic Industry

Organic Ion Template‐Guided Solution Growth of Ultrathin Bismuth Oxyselenide with Tunable Electronic Properties for Optoelectronic Applications

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

Growth of the Bi2Se3 Surface Oxide for Metal–Semiconductor–Metal Device Applications

Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi‐Layer MoS2 Growth

Vapor-Liquid-Solid Growth of Bi<sub>2</sub>O<sub>2</sub>Se Nanoribbons for High-Performance Transistors

Controlled synthesis of few-layer SnSe2 by chemical vapor deposition

Bi2O2Se: A rising star for semiconductor devices

Metal-agglomeration-suppressed growth of MoS2 and MoSe2 films with small sulfur and selenium molecules for high mobility field effect transistor applications

Inclined Ultrathin Bi 2 O 2 Se Films: A Building Block for Functional van der Waals Heterostructures