Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films

Haena Yim,So Yeon Yoo,Haneul Choi,Hye Jung Chang,Seong-Ju Hwang,Sahn Nahm,Minoru Osada,Ji-Won Choi
DOI: https://doi.org/10.1016/j.jallcom.2022.166606
IF: 6.2
2022-12-01
Journal of Alloys and Compounds
Abstract:The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we propose a new material design route to achieve high permittivity behavior in atomically thin films. We present a concrete example of Dion–Jacobson-type KSr2-x Bi x Nb3O10 and its cation-exchanged form HSr2-x Bi x Nb3O10, which exhibits a stable colossal permittivity and low dielectric loss. In addition, Sr2(1−x)Bi2xNb3O10-δ nanosheets were obtained by chemical exfoliation, with a high dielectric permittivity of over 500—the highest among all known dielectrics in ultrathin films (<20 nm). The Bi substitution of Sr2Nb3O10 led to a two-fold increase in the dielectric permittivity owing to the higher polarizability of Bi ions. Our proposed method provides a strategy for obtaining new high-k nanoscale dielectrics for use in nanoscaled electronics.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
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