Efflux of endogenous zinc liberated from metallothionein and alcohol dehydrogenase in the liver by replacement with cadmium.

K. Suzuki,S. Kawahara,H. Sunaga,N. Shimojo

DOI: https://doi.org/10.1016/0041-008X(90)90145-K

IF: 4.46

1990-09-15

Toxicology and Applied Pharmacology

Abstract:

What problem does this paper attempt to address?

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

B F P McVey,D König,X Cheng,P B O'Mara,P Seal,X Tan,H A Tahini,S C Smith,J J Gooding,R D Tilley

DOI: https://doi.org/10.1039/c8nr05071f

IF: 6.7

2018-01-01

Nanoscale

Abstract:The creation of multiple emission pathways in quantum dots (QDs) is an exciting prospect with fundamental interest and optoelectronic potential. For the first time, we report multiple emission pathways in semiconductor nanocrystals (NCs) where the number of emission pathways desired is controlled by the number of dopant atoms per quantum dot. The origin of additional emission pathways is explained by interactions between dopant states and NC energy levels. Density functional theory (DFT) calculations of undoped 2.3 nm silicon (Si NCs) and the same NCs doped with 2 interstitial Cu atoms show good agreement to experiment. Such calculations provide valuable data to explain the changes in optical transitions due to the Cu dopant in terms of transition energies, quantum yield and dopant position as a function of dopants per NC. Changes in the optical properties of Si NCs induced by dopant concentration include extended excitation range and enhanced absorption coefficients, emission redshifts of up to 60 nm, and a two-fold increase in quantum yields up to 22%. The optical properties of doped NCs lead to significant bioimaging improvements illustrated by in vitro cell imaging, including redshifted excitation wavelengths away from natural autofluorescence and enhanced fluorescent signals.
Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

X. Jia,D. Di,H. Xia,L. Wu,Z. Lin,G. Conibeer

DOI: https://doi.org/10.1016/j.jnoncrysol.2012.11.012

IF: 4.458

2013-01-01

Journal of Non-Crystalline Solids

Abstract:Optical constants of silicon quantum dots (Si QDs) in SiO2/Si3N4 hybrid matrix on quartz substrates have been determined in the wavelength range of 350–2500nm. Forouhi–Bloomer (F-B) dispersion model is applied to describe the optical properties of silicon nanocrystals and the mismatch due to global fitting is fixed point by point. To extract the specific optical bandgap of silicon nanocrystal samples, Tauc-plots with γ=1/2 and γ=1/3 are used and discussed for the spectral range of 2eV–3eV. The effect of quantum dot size on the optical bandgap is explored. The results from both Tauc-plot and photoluminescence show the trend that the optical bandgap increases with decreasing quantum dot size, which agrees with the prediction of quantum confinement.
Broadband Tunable Mid-infrared Plasmon Resonances in Cadmium Oxide Nanocrystals Induced by Size-dependent Nonstoichiometry.

Zeke Liu,Yaxu Zhong,Ibrahim Shafei,Soojin Jeong,Liguang Wang,Hoai T. Nguyen,Cheng-Jun Sun,Tao Li,Jun Chen,Lei Chen,Yaroslav Losovyj,Xinfeng Gao,Wanli Ma,Xingchen Ye

DOI: https://doi.org/10.1021/acs.nanolett.0c00542

IF: 10.8

2020-01-01

Nano Letters

Abstract:A central theme of nanocrystal (NC) research involves synthesis of dimension-controlled NCs and studyof size-dependent scaling laws governing their optical, electrical, magnetic, and thermodynamic properties. Here, we describe the synthesis of monodisperse CdO NCs that exhibit high quality-factor (up to 5.5) mid-infrared (MIR) localized surface plasmon resonances (LSPR) and elucidate the inverse scaling relationship between carrier concentration and NC size. The LSPR wavelength is readily tunable between 2.4 and ∼6.0 μm by controlling the size of CdO NCs. Structural and spectroscopic characterization provide strong evidence that free electrons primarily originate from self-doping due to NC surface-induced nonstoichiometry. The ability to probe and to control NC stoichiometry and intrinsic defects will pave the way toward predictive synthesis of doped NCs with desirable LSPR characteristics.
Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Dawei Di,Ivan Perez-Wurfl,Gavin Conibeer,Martin A. Green

DOI: https://doi.org/10.1117/12.859715

2010-01-01

Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.
Silicon Nanocrystals: Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals (advanced Optical Materials 5/2016)

Zhenyi Ni,Xiaodong Pi,Shu Zhou,Tomohiro Nozaki,Bruno Grandidier,Deren Yang

DOI: https://doi.org/10.1002/adom.201670025

IF: 9

2016-01-01

Advanced Optical Materials

Abstract:On page 700, size-dependent optical absorption of boron-hyperdoped silicon nanocrystals (NCs) is investigated by X. D. Pi, D. Yang, and co-workers. For small NC sizes, the quantum confinement effect and the dielectric constant of Si NCs can cause a blue shift of the infrared absorption. This blue shift is induced by the localized surface plasmon resonance (LSPR) of Si NCs. For extremely small NC sizes, the significant scattering of free carriers at the NC surface can completely damp the LSPR.
Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Dawei Di,Heli Xu,Ivan Perez-Wurfl,Martin A Green,Gavin Conibeer

DOI: https://doi.org/10.1186/1556-276x-6-612

2011-01-01

Nanoscale Research Letters

Abstract:Silicon nanocrystals with an average size of approximately 4 nm dispersed in SiO2/Si3N4 hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed.
Optical Constants and Band Gap Expansion of Size Controlled Silicon Nanocrystals Embedded in SiO2 Matrix

X. Yu,R. J. Zhang,Z. J. Xu,D. X. Zhang,H. B. Zhao,Y. X. Zheng,L. Y. Chen

DOI: https://doi.org/10.1016/j.jnoncrysol.2011.06.027

IF: 4.458

2011-01-01

Journal of Non-Crystalline Solids

Abstract:Silicon nanocrystals (Si-NCs) with different sizes embedded in SiO2 matrix were synthesized by phase separation and thermal crystallization of SiOx/SiO2 supperlattice approach. The optical constants and band gap expansion of Si-NCs have been investigated by spectroscopic ellipsometry, based on the Maxwell–Garnett effective medium approximation and the Forouhi–Bloomer optical dispersion model. Similar spectra shapes but smaller values of Si-NCs optical constants with respect to bulk crystalline Si is observed. With the size of Si-NCs decreasing from 6 nm to 2 nm, the band gap increases from 1.64 eV to 2.56 eV. The band gap expansion, as compared to bulk crystalline Si, which agrees with the prediction of first-principles calculations based on quantum confinement effect, is presented in this paper.
Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands

Gerard M Carroll,Rens Limpens,Nathan R Neale

DOI: https://doi.org/10.1021/acs.nanolett.8b00680

2018-05-09

Abstract:The optical properties of silicon nanocrystals (Si NCs) are a subject of intense study and continued debate. In particular, Si NC photoluminescence (PL) properties are known to depend strongly on the surface chemistry, resulting in electron-hole recombination pathways derived from the Si NC band-edge, surface-state defects, or combined NC-conjugated ligand hybrid states. In this Letter, we perform a comparison of three different saturated surface functional groups-alkyls, amides, and alkoxides-on nonthermal plasma-synthesized Si NCs. We find a systematic and size-dependent high-energy (blue) shift in the PL spectrum of Si NCs with amide and alkoxy functionalization relative to alkyl. Time-resolved photoluminescence and transient absorption spectroscopies reveal no change in the excited-state dynamics between Si NCs functionalized with alkyl, amide, or alkoxide ligands, showing for the first time that saturated ligands-not only surface-derived charge-transfer states or hybridization between NC and low-lying ligand orbitals-are responsible for tuning the Si NC optical properties. To explain these PL shifts we propose that the atom bound to the Si NC surface strongly interacts with the Si NC electronic wave function and modulates the Si NC quantum confinement. These results reveal a potentially broadly applicable correlation between the optoelectronic properties of Si NCs and related quantum-confined structures based on the interaction between NC surfaces and the ligand binding group.
Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Zhenyi Ni,Xiaodong Pi,Shu Zhou,Tomohiro Nozaki,Bruno Grandidier,Deren Yang

DOI: https://doi.org/10.1002/adom.201500706

IF: 9

2016-01-01

Advanced Optical Materials

Abstract:Hyperdoping silicon nanocrystals (Si NCs) is emerging as an effective means to obtain novel properties such as localized surface plasmon resonance (LSPR) from Si. Here it is shown that the physical properties and in particular the LSPR of boron (B)‐hyperdoped Si NCs significantly change as the NC size decreases from 6.8 to 2.4 nm. While the largest Si NCs undergo a stronger reduction of the average lattice spacing upon doping with respect to the smallest ones, they suffer much less from disorder and show LSPR over a wider range of B concentration. As a result, by taking advantage of the tunability of the NC size and doping level, the LSPR energy can be changed, making attractive the development of novel Si structures and devices based on B‐hyperdoped Si NCs.
Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Wen-Jie Zhou,Yu-Xiang Zheng,Chi Zhang,Xiao-Feng Ma,Da-Hai Li,Lei Ma,Fei Hu,Shang-Dong Yang,Liao Yang,Meng-Yu Gao,Ming Lu,Rong-Jun Zhang,Song-You Wang,Liang-Yao Chen

DOI: https://doi.org/10.1016/j.optmat.2018.07.063

IF: 3.754

2018-01-01

Optical Materials

Abstract:Thin films of silicon nanocrystals embedded in SiO2 matrices were prepared by annealing a photoresist of hydrogen silsesquioxane. As compared to films made by a common method of annealing SiOx (1 < x < 2), significant enhancement on photoluminescence intensity was observed. Spectroscopic ellipsometry was applied to figure out optical properties of nc-Si made from HSQ. High-resolution tunneling electron microscopy, photoluminescence and absorption spectra were taken to either confirm the fitting results of SE or characterize structural, morphological and photoluminescent properties of all samples. The deduced refractive indices of nc-Si:SiO2 films made from HSQ were given. The influence of particle size and spatial distribution of nc-Si on the extinction coefficient K and PL spectra was observed and discussed.
Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Michael Greben,Petro Khoroshyy,Xiangkai Liu,Xiaodong Pi,Jan Valenta

DOI: https://doi.org/10.1063/1.4993584

IF: 2.877

2017-01-01

Journal of Applied Physics

Abstract:A comprehensive study of the spectrally resolved photoluminescence (PL) decay kinetics of dodecyl-passivated colloidal silicon nanocrystals (Si NCs) is presented. The correct treatment of average decay lifetime is demonstrated. We report on importance to distinguish the external quantum efficiency (QE) from the internal QE. The external QE of the ensemble of Si NCs is measured to be similar to 60%, while the internal QE of Si NCs emitting around similar to 1.5 eV is evaluated to be near unity. This difference between internal and external QE is attributed to a fraction of "dark" (absorbing but non-emitting) Si NCs in the ensemble. This conclusion is based on the analysis of deconvoluted size-selected decay curves retrieved by the presented mathematical procedure. The homogeneous line-broadening is estimated to be around 180 meV by experimentally challenging single-NC PL measurements. In addition, radiative lifetimes are calculated by the envelope function approximation and confirm the observed exponential increase of lifetime with decreasing emission photon energy. Published by AIP Publishing.
Solid-State Synthesis of Si1-xGex Nanoalloys with Composition-Tunable Energy Gaps and Visible to Near Infrared Optical Properties

Griffin Spence,David Pate,Corentin Villot,Roshana Mohamed Fouzie,Lisa S Graves,Ka Un Lao,U. Ozgur,Indika U Arachchige

DOI: https://doi.org/10.1039/d4nr03472d

IF: 6.7

2024-12-04

Nanoscale

Abstract:Si 1-x Ge x alloy nanocrystals (NCs) are a class of benign semiconductors that show size and composition-tunable energy gaps and promising optical properties because of the lattice disorder. The random distribution of elements within the alloys can lead to efficient light-matter interactions, making them attractive for Si-compatible optoelectronic devices, transistors, charge storage, and memory applications. However, the fabrication of discrete, quantum-confined alloys has proven a challenging task. Herein, we report solid-state co-disproportionation of a hydrogen silsesquioxane (HSQ)/GeI 2 composite precursor to produce homogeneous Si 1-x Ge x NCs with control over diameter (5.9 ± 0.7 – 7.8 ± 1.1 nm) and composition (x = 0 – 14.4%) with strong size confinement effects and visible to near IR absorption and emission properties. As-synthesized alloys show an expanded diamond cubic Si structure, a systematic red-shift of Si-Si Raman peak, and emergence of Si-Ge/Ge-Ge peaks with increasing Ge, consistent with the admixture of isovalent elements. Surface analysis of alloys reveals Si 0 /Ge 0 core and Si n+ /Ge n+ surface species and efficient surface functionalization with alkyl ligands via thermal hydrosilylation and/or hydrogermylation. Alloy NCs exhibit absorption onsets (2.26 – 1.92 eV), indirect (1.53 – 1.80 eV) and direct (2.88 – 2.47 eV) energy gaps, and photoluminescence (PL) maxima (1.40 – 1.27 eV) that can be tuned by manipulating the diameter and/or composition. The experimental PL energies are consistent with those predicted by density functional theory (DFT) suggesting that the PL originates from NC core electronic transitions. The facile low-temperature solid-state synthesis and control over physical properties realized in this study will allow discrete Si 1-x Ge x NCs to emerge as low to nontoxic, earth-abundant, and Si-compatible nanostructures for a broad range of electronic and photonic technologies.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Shu Zhou,Zhenyi Ni,Yi Ding,Michihiro Sugaya,Xiaodong Pi,Tomohiro Nozaki

DOI: https://doi.org/10.1021/acsphotonics.5b00568

IF: 7

2016-01-01

ACS Photonics

Abstract:Colloidal heavily doped silicon nanocrystals (Si NCs) exhibiting tunable localized surface plasmon resonance (LSPR) are of great interest in cost-effective, solution-processed optoelectronic devices given the abundance and nontoxicity of Si. In this work we show that tunable plasmonic properties and colloidal stability without the use of ligands can be simultaneously obtained for Si NCs heavily doped with boron (B). The heavily B-doped Si NC colloids are found to be stable in air for months, opening up the possibility of device processing in ambient atmosphere. The optical absorption of heavily B-doped Si NCs reveals that the heavy B doping not only changes the concentration of free carriers that are confined in Si NCs but also modifies the band structure of Si NCs. After heavy B doping both indirect and direct electronic transition energies remarkably decrease in Si NCs because the heavy B doping induced movement of the conduction band toward the band gap could be more significant than that of the Fermi ...
Silicon nanocrystals synthesized using very high frequency non-thermal plasma and their application in photovoltaics

yi ding,ryan gresback,shu zhou,xiaodong pi,tomohiro nozaki

DOI: https://doi.org/10.1088/0022-3727/48/31/314011

2015-01-01

Abstract:Silicon nanocrystals (Si NCs) with average size of 6 nm were synthesized using very high frequency non-thermal plasma. After surface chemical treatment, they were applied in Si NC/PTB7 hybrid solar cells as the acceptor material. According to the performance of devices with different Si NC/PTB7 weight ratios, results show that surface-treated Si NCs have good electrical properties with few trapping centres. Furthermore, Si NCs promote exciton dissociation, carrier transport processes and contribute to light absorption, especially in the near-UV region. Finally, devices with efficiency as high as 3.0% have been achieved with optimized Si NC/PTB7 weight ratio, which is competitive in same type devices using different nanocrystals.
Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

zhenyi ni,xiaodong pi,deren yang

DOI: https://doi.org/10.1039/c2ra21537c

IF: 4.036

2012-01-01

RSC Advances

Abstract:Charge carrier transport associated with silicon nanocrystals (Si NCs) can be improved by removing hydrocarbon chains that are routinely attached to the NC surface by means of hydrosilylation. Thermal annealing for the hydrocarbon-chain removal may lead to carbon-coated Si NCs. But the optical behavior of carbon-coated Si NCs has not been clearly understood. By comparing a carbon-coated Si NC with those fully passivated by hydrogen (H) or coated with silicon oxide (SiO2) in the framework of density functional theory, we find that carbon coating causes both the excitation energy and emission energy of the Si NC to significantly decrease. The carbon-coated Si NC exhibits a smaller Stokes shift than the fully H-passivated and SiO2-coated Si NCs. The radiative recombination rate of the carbon-coated Si NC is two orders of magnitude lower than those of the fully H-passivated and SiO2-coated Si NCs. The thermal removal of hydrocarbon chains at the NC surface is not recommended for Si-NC-based light-emitting devices because carbon-coated Si NCs with rather low light emission efficiency may be produced. In contrast, the carbon coating of Si NCs may be beneficial for Si-NC-based solar cells.
Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

X D Pi,R W Liptak,J Deneen Nowak,N P Wells,C B Carter,S A Campbell,U Kortshagen

DOI: https://doi.org/10.1088/0957-4484/19/24/245603

IF: 3.5

2008-01-01

Nanotechnology

Abstract:A novel dual-plasma system has been developed to combine the synthesis of silicon nanocrystals ( Si-NCs), the etching to controllably tailor the Si-NC size, and the surface functionalization of Si-NCs into one simple all-gas-phase process. Si-NCs are synthesized in SiH4-based plasma; they then travel through CF4-based plasma, where Si-NCs are etched and passivated by C and F. The resulting Si-NCs exhibit air-stable emission across the full visible spectrum. Structural and optical characterization indicates that the emission in the red-to-green range is based on the recombination of quantum-confined excitons in Si-NCs, while the blue emission originates from defect states. The quantum yields of stabilized photoluminescence from Si-NCs range from 16% at the red end to 1% at the blue end.
Light Emission from Si Nanoclusters Formed at Low Temperatures

XD Pi,OHY Zalloum,T Roschuk,J Wojcik,AP Knights,P Mascher,PJ Simpson

DOI: https://doi.org/10.1063/1.2183813

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Photoluminescence (PL) from amorphous Si nanoclusters (Si-ncls) formed by thin-film deposition via electron-cyclotron resonance plasma-enhanced chemical vapor deposition followed by annealing at temperatures ⩽875°C has been investigated. We find that Si-ncls grow very slowly after their initial nucleation at low temperatures. An increase in the size of Si-ncls, which can be controlled by the annealing temperature, induces a redshift in the Si-ncl PL peak. While the emitted optical power is more than 100 times smaller than that of Si nanocrystals formed in an identically deposited film, it is increased by a factor of up to approximately four times following hydrogen passivation. The incorporation of hydrogen causes a redshift in the PL peak position, suggesting a partial hydrogenation induced bond distortion of the Si-ncls. This redshift decreases with increasing hydrogen ambient annealing temperature.
Theory of cathode trajectory characterization by canonical mapping transformation.

S. Fujita,H. Shimoyama

DOI: https://doi.org/10.1093/JMICRO/DFI052

2005-08-01

Journal of Electron Microscopy

Abstract:The paraxial lens theory cannot directly be applied to the cathode trajectories inside the gun. This inconvenience makes the interpretation of cathode trajectories difficult since one cannot use the physical concepts familiar in the paraxial lens theory, such as focal length and magnification factor. We have proposed the canonical mapping transformation (CMT) to describe the electron trajectories inside the gun by relating the ray conditions on the cathode surface to those in the crossover plane. The method takes as variables the distance along the surface and the sine of the ray angle with respect to the surface normal to define ray conditions. It has been shown that the CMT can be characterized by a small number of optical parameters. One of the parameters is the 'electron gun focal length', an extension of the image side focal length in the paraxial lens theory. The crossover size of a triode gun can be calculated from the electron gun focal length and the initial transverse energy spread. The calculation predicts the dependence of the crossover size on the grid voltage due to the change in the electron gun focal length. The prediction is compared with the measurement and shows good agreement with it. Since the CMT optical parameters can be calculated from the representative trajectories only and as they predict practically all the necessary source properties of guns, the CMT can be used as a practical tool in the designing of various types of electron guns.
Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Yuhan Gao,Hao Shen,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1364/ome.9.004329

2019-01-01

Optical Materials Express

Abstract:We have investigated the structural evolution of Si-rich Er silicate films. Er silicate layers embedded with amorphous silicon (a-Si) clusters are formed upon the annealing above 1000 degrees C of Er-doped Si-rich SiO2 films with high Er concentrations. It is tbund that the crystallization of Er silicates annealed at higher temperatures leads to the disappearance of Si-NCs formed at 900 degrees C. On the other hand, the interface between Er silicate and embedded a-Si clusters increases the nucleation barrier for Si-NCs in these clusters. A two-step annealing process is utilized to obtain a fine structure and a good crystal quality of Er silicates at the same time, which will benefit the sensitized photoluminescence of Er silicates. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Sn-Induced Synthesis of Highly Crystalline and Size-Confined Si Nanorods at Moderately High Temperatures Using Hydrogen Silsesquioxane

Griffin C. Spence,Rachel C. Barbieri,David Pate,Lisa S. Graves,Ümit Özgür,Indika U. Arachchige,Ümit Özgür

DOI: https://doi.org/10.1021/acs.jpcc.3c01308

2023-06-12

The Journal of Physical Chemistry C

Abstract:Size-confined Si nanorods (NRs) have gained notable interest because of their tunable photophysical properties that make them attractive for optoelectronic, charge storage, and sensor technologies. However, established routes for fabrication of Si NRs use well-defined substrates and/or nanoscopic seeds as promoters that cannot be easily removed, hindering the investigation of their true potential and physical properties. Herein, we report a facile, one-step route for the fabrication of Si NRs via thermal disproportionation of hydrogen silsesquioxane (HSQ) in the presence of a molecular tin precursor (SnCl4) at a substantially lower temperature (450 °C) compared to those used in the synthesis of size-confined Si nanocrystals (>1000 °C). The use of these precursors allows the facile isolation of phase-pure Si NRs via HF etching and subsequent surface passivation with 1-dodecene via hydrosilylation. The diameters (7.7–16.5 nm) of the NRs can be controlled by varying the amount of SnCl4 (0.2–3.0%) introduced during the HSQ synthesis. Physical characterization of the NRs suggests that the diamond cubic structure is not affected by SnCl4, HF etching, and hydrosilylation. Surface analysis of NRs indicates the presence of Si0 and Sin+ species, which can be attributed to core Si and surface Si species bonded to dodecane ligands, respectively, and a systematic variation of the Si0:Si–C ratio with the NR diameter. The NRs show strong size confinement effects with solid-state absorption onsets (2.51–2.80 eV) and solution-state (Tauc) indirect energy gaps (2.54–2.70 eV) that can be tuned by varying the diameter (16.5–7.7 nm). Photoluminescence (PL) and time-resolved PL (TRPL) studies reveal size-dependent emission (1.95–2.20 eV) with short, nanosecond lifetimes across the visible spectrum, which trend closely with absorption trends seen in solid-state absorption data. The facile synthesis developed for size-confined Si NRs with high crystallinity and tunable optical properties will promote their application in optoelectronic, charge storage, and sensing studies.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary

Efflux of endogenous zinc liberated from metallothionein and alcohol dehydrogenase in the liver by replacement with cadmium.

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Broadband Tunable Mid-infrared Plasmon Resonances in Cadmium Oxide Nanocrystals Induced by Size-dependent Nonstoichiometry.

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Silicon Nanocrystals: Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals (advanced Optical Materials 5/2016)

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Optical Constants and Band Gap Expansion of Size Controlled Silicon Nanocrystals Embedded in SiO2 Matrix

Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Solid-State Synthesis of Si1-xGex Nanoalloys with Composition-Tunable Energy Gaps and Visible to Near Infrared Optical Properties

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Silicon nanocrystals synthesized using very high frequency non-thermal plasma and their application in photovoltaics

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

Light Emission from Si Nanoclusters Formed at Low Temperatures

Theory of cathode trajectory characterization by canonical mapping transformation.

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Sn-Induced Synthesis of Highly Crystalline and Size-Confined Si Nanorods at Moderately High Temperatures Using Hydrogen Silsesquioxane