6.6+ GHz Low Vmin, read and half select disturb-free 1.2 Mb SRAM

R. Joshi,R. Houle,K. Batson,D. Rodko,P. Patel,W. Huott,R. Franch,Y. Chan,D. Plass,S. Wilson,P. Wang

DOI: https://doi.org/10.1109/VLSIC.2007.4342738

2007-06-14

Abstract:A fully functional read and half select disturb-free 1.2 Mb SRAM is demonstrated. Measured results show an operating range of 0.4 V to 1.5 V and -25degC to 100degC, speed of 6.6+ GHz at IV, 25degC and yield of 90-100%.

What problem does this paper attempt to address?

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Yuanyuan Han,Xu Cheng,Jun Han,Xiaoyang Zeng

DOI: https://doi.org/10.1109/tvlsi.2019.2961736

2020-01-01

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Abstract:Conventional radiation-hardened cells of static random access memory (SRAM) are not robust enough in 28 nm technology, due to partial immunity of single-event upset (SEU) effect (Quatro-based cells) or insufficient critical charges in sensitive nodes (conventional stacked cells). The reduction of read noise margin (RNM) at the low supply voltage (VDD) confines these cells from low VDD applications. We propose a novel interleaving stacked-14T (ILS-14T) cell which prevents voltage transient from propagating to other redundancies. The ILS-14T cell can be resilient to both 0-1 and 1-0 upsets by injecting 12 mA in sensitive nodes. The critical charges of the ILS-14T cell are substantially larger than most other hardened cells at VDD from 0.3 to 0.9 V. The RNM of the ILS-14T cell is two times of most Quatro-based cells at 0.3 V VDD and larger than most cells at 0.6 and 0.9 V VDD. The area of occupation is 334% of the conventional 6T cell, which equals other 14T cells. The static-dynamic decoder array with 20%-40% area penalty and 116%-132% delay of rising edge, when compared with the conventional one, reduces the read failure rate by preventing single event transients (SETs) from propagating to unexpected word lines (WLs).
A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Ping Liu,Joseph Wang,Michael Phan,Manish Garg,Ron Zhang,Amer Cassier,Lew Chua-Eoan,Boris Andreev,Sebastien Weyland,Shashank Ekbote,Michael Han,Jeff Fischer,Geoffrey C-F Yeap,Ping-Wei Wang,Quincy Li,C. S. Hou,S. B. Lee,Y. F. Wang,S. S. Lin,M. Cao,Y. J. Mii

DOI: https://doi.org/10.1109/vlsit.2010.5556200

2010-01-01

Abstract:In this work we have demonstrated, for the first time, a 0.605µm2 dual core oxide (DCO) dual Vdd 8T SRAM cell in 45LPG triple gate oxide CMOS process for use as L1 cache for high performance low leakage mobile applications. The DCO 8T SRAM operates under dual voltage supplies with write assist. Compared to traditional single-end 8T cell, DCO 8T SRAM showed the same performance with only half the standby leakage, and lower Vccmin. The PU Vt and dual core oxide boundary were optimized to achieve robust Vccmin, process margin and reliability. The 45LPG thin core transistors and the DCO 8T SRAM are able to achieve 1.5GHz speed with ∼500mW at 0.9V and a low Vccmin of 0.6V.
A Single Bitline Highly Stable, Low Power With High Speed Half-Select Disturb Free 11T SRAM Cell

Lokesh Soni,Neeta Pandey

DOI: https://doi.org/10.1145/3653675

IF: 1.447

2024-07-09

ACM Transactions on Design Automation of Electronic Systems

Abstract:A half-select disturb-free 11T (HF11T) static random access memory (SRAM) cell with low power, better stability and high speed is presented in this paper. The proposed SRAM cell works well with bit-interleaving design, which enhances soft-error immunity. A comparison of the proposed HF11T cell with other cutting-edge designs such as single-ended HS free 11T (SEHF11T), a shared-pass-gate 11T (SPG11T), data-dependent stack PMOS switching 10T (DSPS10T), a single-ended half-selected robust 12T (HSR12T), and 11T SRAM cells has been made. It exhibits 4.85×/9.19× less read delay ( T RA ) and write delay ( T WA ), respectively as compared to other considered SRAM cells. It achieves 1.07×/1.02× better read and write stability, respectively than the considered SRAM cells. It shows maximum reduction of 1.68×/4.58×/94.72×/9×/145× leakage power, read power, write power consumption, read power delay product (PDP) and write PDP respectively, than the considered SRAM cells. In addition, the proposed HF11T cell achieves 10.14× higher I on / I off ratio than the other compared cells. These improvements come with a trade-off, resulting in 1.13× more T RA compared to SPG11T. The simulation is performed with Cadence Virtuoso 45nm CMOS technology at supply voltage ( V DD ) of 0.6 V.

computer science, software engineering, hardware & architecture
An Ultra-Low-power 1 Kb Sub-Threshold SRAM in the 180 Nm CMOS Process

Liu Ming,Chen Hong,Li Changmeng,Wang Zhihua

DOI: https://doi.org/10.1088/1674-4926/31/6/065013

2010-01-01

Abstract:This paper presents a 1 kb sub-threshold SRAM in the 180 nm CMOS process based on an improved 11T SRAM cell with new structure. Final test results verify the function of the SRAM. The minimal operating voltage of the chip is 350 mV, where the speed is 165 kHz, the leakage power is 42 nW and the dynamic power is about 200 nW. The designed SRAM can be used in ultra-low-power SoC.
A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling

Xi Deng,Run-Ze Yu,Zhen-Hao Li,Hao-Ming Zhang,Zheng-Lin Liu

DOI: https://doi.org/10.1109/tcad.2024.3367233

IF: 2.9

2024-01-01

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Abstract:Reducing the minimum operating voltage (Vmin) and improving the variation tolerance are the main design challenges of voltage-scalable SRAMs. This paper presents a variation-tolerant 7T SRAM with reduced data-dependent RBL leakage to enhance read sensing margin and improve Vmin without any assist techniques. The design implements a delay-tracking-based adaptive timing generation technique and an error detection circuit for PVT variation-tolerant operation and reliable dynamic voltage scaling. An 8Kb SRAM macro is implemented in 55nm CMOS technology to demonstrate our design. Post-layout simulation results show error-free full functionality down to 0.35V at an operating frequency of 202kHz. The RBL leakage current for 7T SRAM cell is improved by 2.6x and the Ion-to-Ioff ratio is improved by 2.3x compared to the conventional 8T SRAM cell. The minimum energy of 1.76pJ is achieved at 0.4V. The proposed 7T SRAM functioning as an on-chip memory in a voltage-scalable SoC is measured and demonstrate operation from 0.75V to 1.2V at 32MHz. The average power consumption for the entire chip performing 7T read and write operations decreased by 19.3% compared to that of the standard 6T SRAM at 0.75V.

engineering, electrical & electronic,computer science, interdisciplinary applications, hardware & architecture
A 28nm 1.5mb Embedded 1T2R RRAM with 14.8 Mb/mm2 Using Sneaking Current Suppression and Compensation Techniques

Jianguo Yang,Xiaoyong Xue,Xiaoxin Xu,Hangbing Lv,Feng Zhang,Xiaoyang Zeng,Meng-Fan Chang,Ming Liu

DOI: https://doi.org/10.1109/vlsicircuits18222.2020.9163035

2020-01-01

Abstract:For the first time, 1T2R RRAM cell using PMOS selector is proposed and demonstrated with improved reset voltage and high density for embedded NVM. Hierarchical bit line and 3-state cell storage confine the associated sneaking current locally within a small zone and further suppress it by >90%. Self-adaptive write driver with current limiter and sneaking current compensator realizes power saving and accurate current compliance for set. To suit PMOS selector, reverse read using current sensing with dummy reference brings fast and reliable read. A 1.5Mb RRAM test chip in 28nm improved the record storage density by 40% to 14.8 Mb/mm 2 . Reliable read is performed at low VDD of 0.6V@(-40, 125)°C.
Low Voltage SRAM Cell Suitable for Bit-Interleaved Structure

Song JIA,Heqing XU,Yuan WANG,Fengfeng WU,Tao LI,Yue XU

2013-01-01

Abstract:A single-ended nine-transistor(9T) SRAM scheme is proposed for sub-threshold operation.The new SRAM cell provides high stability using disturb-free read operation.With a new write mechanism,the cell can solve the pseudo-read problem.Thus,the bit-interleaved structure can be used to address the multiple bit soft-errors problem.Simulation result shows that the SRAM cell can provide 100 mV read static-noise-margin(SNM) and 70 mV worst half-select SNM,when the supply voltage is 300 mV.
Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

Qing Luo,Xiaoxin Xu,Hongtao Liu,Hangbing Lv,Tiancheng Gong,Shibing Long,Qi Liu,Haitao Sun,Writam Banerjee,Ling Li,Jianfeng Gao,Nianduan Lu,Steve S. Chung,Jing Li,Ming Liu

DOI: https://doi.org/10.1109/IEDM.2015.7409667

2015-01-01

Abstract:Developing high performance self-selective cell (SSC) is one of the most critical issues of the integration of 3D vertical RRAM (V-RRAM). In this work, a four-layer V-RRAM array, with high performance HfO 2 /mixed ionic and electronic conductor (MIEC) bilayer SSC, was demonstrated for the first time. Several salient features were achieved, including ultra-low half-select leakage (<;0.1 pA), very high nonlinearity (>10 3 ), low operation current (nA level), self-compliance, high endurance (>10 7 ), and robust read/write disturbance immunity.
Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

Zixuan Chen,Huaqiang Wu,Bin Gao,Dong Wu,Ning Deng,He Qian,Zhichao Lu,Brent Haukness,M. Kellam,Gary Bronner

DOI: https://doi.org/10.1109/imw.2017.7939097

2017-01-01

Abstract:A 16Mb RRAM Chip with source line (SL) current limitation and a novel programming strategy is developed. Comparing with traditional gate control current method, SET operation with source current control can significantly narrow the read current distribution. The programming strategy is optimized simultaneously using a low current multi-step forming and single pulse program operation. With these optimizations, the raw bit yield is improved to 99.99%. Meanwhile the devices on the chip showed good endurance up to 106 cycles without degradation. After 106 cycles the bit error rate of the array is still less than 0.2%. The chip also showed 10 years' retention at 85°C.
A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOS.

Khawar Sarfraz,Jin He,Mansun Chan

DOI: https://doi.org/10.1109/JSSC.2017.2707392

IF: 5.4

2017-01-01

IEEE Journal of Solid-State Circuits

Abstract:This paper presents a sub-threshold SRAM, which eliminates bitline (BL) leakage-induced read failures. The proposed architecture clamps the current ratio between differential BLs to a fixed value, thus permitting reliable ultra-low-voltage read-out. A de-multiplexed wordline interleaving scheme is presented to compensate for bitcell area overhead. The interleaving technique achieves 9% reduction i...
Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

Liang Wen,Xu Cheng,Keji Zhou,Shudong Tian,Xiaoyang Zeng

DOI: https://doi.org/10.1109/tcsii.2016.2530881

2016-01-01

Abstract:This brief proposes the design of a low-voltage static random access memory (SRAM) for biomedical chip applications. The SRAM is designed using a standard 8T bit cell, featuring a shared data-aware write scheme and a differential reference-based sense amplifier. The proposed techniques make it possible for the 8T SRAM to use bit-interleaving architecture and address the half-select problem, achieving area efficiency and power reduction. A 96-kb 8T SRAM test chip is implemented in a 65-nm CMOS process to verify the proposed schemes, which operates functionality at a VDDmin of 0.36 V and has a power consumption of 5.1 μW.
A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

Xiang Zheng,Ming Liu,Hong Chen,Huamin Cao,Cong Wang,Zhiqiang Gao

DOI: https://doi.org/10.1109/ddecs.2012.6219052

2012-01-01

Abstract:This paper focuses on high speed embedded SRAM design, especially on novel circuit technique to improve SRAM access time. A new two-stage sensing scheme which is able to reduce long interconnection metal line delay by transferring differential signals with half swing amplitude has been proposed. Post-layout simulation results show that the long distance signal transmission time has been decreased by 45%. Chip measurement shows the access time has been decreased by 23% at the expense of little area penalty (1.3%) and some read power penalty (about 16%) mainly caused by 2nd-stage sense amplifiers.
A 1Mb RRAM Macro With 9.8ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation

Junjie Mu,Lu Lu,Ju Eon Kim,Byungkwon An,Vishal Sharma,Arya Jagath Lekshmi,Putu Andhita Dananjaya,Weng Hong Lai,Wen Siang Lew,Tony Tae-Hyoung Kim

DOI: https://doi.org/10.1109/tcsii.2024.3379373

2024-01-01

Abstract:Resistive RAM (RRAM) has emerged as a promising candidate for the next generation of non-volatile memories (NVMs) due to its low write voltage and compact area that is compatible with CMOS technology. In this work, we propose a 1Mb macro consisting of two 512Kb sub-arrays, with the macro area reduced by implementing a common source-line (SL) structure. A voltage-mode sense amplifier (VSA) is designed to overcome the challenge of the low ratio between high-resistance and low-resistance states (R-ratio). Two columns of replica cells situated in the center of the RRAM array are used to generate the reference voltages, which exhibit behavior that closely tracks the changes in the bit-line (BL) voltage even under PVT variations. Additionally, power-gating and common-mode feedback circuits are implemented in the SA to save power and improve sensing speed. The test chip, fabricated in 40nm CMOS technology, occupies a core area of 0.996mm2. Compared to the prior work, the array density (5.58Mb/mm2) improves by 1.12×. The read access time is 9.8ns with a read precharge voltage of 0.3 V.

engineering, electrical & electronic
A 16 Mb Rram Test Chip Based on Analog Power System with Tunable Write Pulses

Xiangchao Ma,Huaqiang Wu,Dong Wu,He Qian

DOI: https://doi.org/10.1109/nvmts.2015.7457478

2015-01-01

Abstract:One transistor one resistor (1T1R) structure can be used to suppress the sneak current in RRAM array. In this paper, a 1.6Mb 1T1R RRAM chip is proposed. The 130 nm HH-Grace process is used as the FEOL of the chip. A HfOx/CMO based RRAM stack will be fabricated using back end process. The chip mainly contains four blocks: the RRAM array, the analog power block, the control logic block and the pad ring which uses standard pad provided by foundry. The operating conditions is designed to be configurable to explore different RRAM stack. Tunable write pulses can be used to improve the RRAM performance. The analog power system supplies different voltage levels to achieve specific function. The simulation results show that the chip can work as expected.
16-Layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pa) Self-Selective Cells

Yaxin Ding,Jianguo Yang,Yu Liu,Jianfeng Gao,Yuan Wang,Pengfei Jiang,Shuxian Lv,Yuting Chen,Boping Wang,Wei,Tiancheng Gong,Kanhao Xue,Q. Luo,Xiangshui Miao,Ming Liu

DOI: https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185341

2023-01-01

Abstract:On-current and nonlinearity of selector-less RRAM are essential for improving the sensing speed and suppressing sneak path leakage respectively in 3D vertical crossbar structure. In this work, by using an oxide in which oxygen vacancies do not readily accumulate (NbOx) to prepare the memory layer, 50x on-state current density improvement is achieved with high nonlinearity of 5000. The maximum nonlinearity of this device is even higher $(8 \times 10 ^{4}$ read @ 1.04 V). Furthermore, for the first time, we present a 16-layer 3D vertical RRAM. Other outstanding performances such as low off-current (~ pA), self-compliance and high endurance (> 108) are also demonstrated.
A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

Qing Dong,Zhehong Wang,Jongyup Lim,Yiqun Zhang,Yi-Chun Shih,Yu-Der Chih,Jonathan Chang,David Blaauw,Dennis Sylvester

DOI: https://doi.org/10.1109/isscc.2018.8310393

2018-01-01

Abstract:1T1R spin-transfer-torque (STT) MRAM is a promising candidate for next-generation high-density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from limited sensing margin and high write power. As shown in Fig. 30.2.1(a), sense amplifier design is challenging due to the small difference (only 2x) between the high-resistance state (R AP ) and the low-resistance state (R P ), as well as R AP degradation with increasing temperature. Moreover, R P and R AP resistance distributions shift with process variation, requiring a read reference (V ref ) that tracks process. To improve the sensing margin, several offset-cancellation methods have been reported to reduce sense amplifier mismatch [3]. However, these methods use multiple capacitors and hence incur significant area overheads. To address this issue, we propose an offset-cancelled sense amplifier that uses only a single capacitor to significantly improve the sensing margin by more than 60%. A second design challenge for STT-MRAM stems from the high current needed to flip a cell during a write operation. For non-volatile memory applications with a 10-year retention time requirement, the write current can be as high as several hundred μA. However, as shown in Fig. 30.2.1(b), the required write time varies with the state change required (0→1 or 1→0), process variation, and temperature. As a result, a fixed write time that ensures successful write for all conditions wastes a significant energy for typical or average conditions. We propose an in situ write-self-termination method to reduce write energy in most scenarios. The sense amplifier is reconfigured to continuously monitor the write operation and automatically shuts off the write drivers when the state transition is detected, without an area or timing penalty. In addition, dual dummy columns are added in each array to provide read V ref tracking of row-wise PVT variation. A 1Mb STT-MRAM was fabricated in 28nm technology, and achieves a 2.8ns read-access time at 25°C and 3.6ns at 120°C, respectively. With in-situ self-write-termination the write power is reduced by 47% with a 20ns write-access time at 25°C and by 60% at 120°C.
Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM)

Han Xiao,Ruiyong Zhao,Yulan Liu,Yuanzhen Liu,Jing Chen

DOI: https://doi.org/10.3390/mi15081056

IF: 3.4

2024-08-24

Micromachines

Abstract:The von Neumann architecture is no longer sufficient for handling large-scale data. In-memory computing has emerged as the potent method for breaking through the memory bottleneck. A new 10T SRAM bitcell with row and column control lines called RC-SRAM is proposed in this article. The architecture based on RC-SRAM can achieve bi-directional and operand-controllable logic-in-memory and search operations through different signal configurations, which can comprehensively respond to various occasions and needs. Moreover, we propose threshold-controlled logic gates for sensing, which effectively reduces the circuit area and improves accuracy. We validate the RC-SRAM with a 28 nm CMOS technology, and the results show that the circuits are not only full featured and flexible for customization but also have a significant increase in the working frequency. At VDD = 0.9 V and T = 25 °C, the bi-directional search frequency is up to 775 MHz and 567 MHz, and the speeds for row and column Boolean logic reach 759 MHz and 683 MHz.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
13.2 A 14nm FinFET 128Mb 6T SRAM with VMIN-enhancement techniques for low-power applications

J. Yoon,Kyu-Myung Choi,K. Baek,Sangmuk Oh,S. Baek,W. Rim,Giyong Yang,Jintae Kim,Young-Keun Lee,Kee Sup Kim,Sunghyun Park,Sungbong Kim,Jaehong Park,S. Sim,Jinsuk Jung,Gyuhong Kim,Jonghoon Jung,T. Song

DOI: https://doi.org/10.1109/ISSCC.2014.6757413

2014-03-06

Abstract:With the explosive growth of battery-operated portable devices, the demand for low power and small size has been increasing for system-on-a-chip (SoC). The FinFET is considered as one of the most promising technologies for future low-power mobile applications because of its good scaling ability, high on-current, better SCE and subthreshold slope, and small leakage current [1]. As a key approach for low-power, supply-voltage (VDD) scaling has been widely used in SoC design. However, SRAM is the limiting factor of voltage-scaling, since all SRAM functions of read, write, and hold-stability are highly influenced by increased variations at low VDD, resulting in lower yield. In addition, the width-quantization property of FinFET device reduces the design window for transistor sizing, and increases the failure probability due to the un-optimized bitcell sizing [1]. In order to overcome the bitcell challenges to high yield, peripheral-assist techniques are required. In this paper, we present 14nm FinFET-based 128Mb 6T SRAM chips featuring low-VMIN with newly developed assist techniques.

Engineering,Materials Science,Computer Science
Multiple Combined Write-Read Peripheral Assists in 6T FinFET SRAMs for Low-VMIN IoT and Cognitive Applications

Arijit Banerjee,Sumanth Kamineni,Benton H. Calhoun

DOI: https://doi.org/10.1145/3218603.3218628

2018-07-23

Abstract:Battery-operated or energy-harvested IoT and cognitive SoCs in modern FinFET processes prefer the use of low-VMIN SRAMs for ultra-low power (ULP) operations. However, the 1:1:1 high-density (HD) FinFET 6T bitcell faces challenges in achieving a lower VMIN across process variation. The 6T bitcell VMIN improves either by increasing the size of the bitcell or by using combinations of peripheral assists (PAs) since a single PA cannot achieve the best VMIN across process variation. State-of-the-art works show some combinations of write and read PAs that lower the VMIN of 6T FinFET SRAMs. However, the better combinations of PA for 14nm HD 6T FinFET SRAMs are unknown. This work compares all the possible dual combinations of PAs and reveals the better ones. We show that in a usual column mux scenario the combination of negative bitline with VDD boosting and VDD collapse with VDD boosting in a proportion of 14% and 6% (total 20%), respectively, maximize the static VMIN improvement close to 191mV for ULP IoT and cognitive applications. We also show that a combination of wordline boosting with negative bitline and wordline boosting with VSS lowering achieve a 150mV and 25mV of dynamic VMIN improvement at the 5GHz frequency for the worst-case write and read corners, respectively, beating other combinations.
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins

Erfan Abbasian,Farzaneh Izadinasab,Morteza Gholipour

DOI: https://doi.org/10.1109/tcsi.2021.3138849

2022-04-01

Abstract:This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross-coupled structure consisting standard inverter with a stacked transistor and Schmitt-trigger inverter with a double-length pull-up transistor. This along with the read path separated from true internal storage nodes eliminates the read-disturbance. Furthermore, it performs its write operation in pseudo differential form through write bitline and control signal with a write-assist technique. To estimate the proposed LP10T SRAM cell’s performance, it is compared with some state-of-the-art SRAM cells using HSPICE in 16-nm CMOS predictive technology model at 0.7 V supply voltage under harsh manufacturing process, voltage, and temperature variations. The proposed SRAM cell offers 4.65X/1.57X/1.46X improvement in RSNM/WSNM/WM and 4.40X/1.69X narrower spread in RSNM/WM compared to the conventional 6T SRAM cell. Furthermore, it shows 1.26X/1.08X/1.01X higher RSNM/WSNM/WM and 1.71X/1.25X tighter/wider spread in RSNM/WM compared to the best studied SRAM cells. The proposed SRAM cell indicates 74.48%/1.41% higher/lower read/write delay compared to the 6T SRAM cell. Moreover, it exhibits the third-(second-) best read (write) dynamic power, consuming 29.69% (26.87%) lower than the 6T SRAM cell. The leakage power is minimized by the proposed design, which is 37.35% and 12.08% lower than that of the 6T and best studied cells, respectively. Nonetheless, the proposed LP10T SRAM cell occupies 1.313X higher area compared to the 6T SRAM cell.

engineering, electrical & electronic

6.6+ GHz Low Vmin, read and half select disturb-free 1.2 Mb SRAM

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

A Single Bitline Highly Stable, Low Power With High Speed Half-Select Disturb Free 11T SRAM Cell

An Ultra-Low-power 1 Kb Sub-Threshold SRAM in the 180 Nm CMOS Process

A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling

A 28nm 1.5mb Embedded 1T2R RRAM with 14.8 Mb/mm2 Using Sneaking Current Suppression and Compensation Techniques

Low Voltage SRAM Cell Suitable for Bit-Interleaved Structure

Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOS.

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

A 1Mb RRAM Macro With 9.8ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation

A 16 Mb Rram Test Chip Based on Analog Power System with Tunable Write Pulses

16-Layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pa) Self-Selective Cells

A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM)

13.2 A 14nm FinFET 128Mb 6T SRAM with VMIN-enhancement techniques for low-power applications

Multiple Combined Write-Read Peripheral Assists in 6T FinFET SRAMs for Low-VMIN IoT and Cognitive Applications

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins