Abstract:The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO2 and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO2 as a material system, we performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface. Putting each technique in perspective, we demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferroelectric response. By leveraging the strength of each method, we showed how intrinsic processes in ultrathin dielectrics, i.e., electronic leakage, existence and generation of energy states, charge trapping (de-trapping) phenomena, and electrochemical effects, can influence the sensed response. We then proceeded to initiate hysteresis loops by means of tip-induced spectroscopic cycling (i.e., “wake-up”), thus observing the onset of oxide degradation processes associated with this step. Finally, direct piezoelectric effects were studied using the high pressure resulting from the probe’s confinement, noticing the absence of a net time-invariant piezo-generated charge. Our results are critical in providing a general framework of interpretation for multiple nanoscale processes impacting ferroelectricity in doped-hafnia and strategies for sensing it.

Investigation of the large-signal electromechanical behavior of ferroelectric HfO2–CeO2 thin films prepared by chemical solution deposition

Improvement of remanent polarization of CeO 2 –HfO 2 solid solution thin films on Si substrates by chemical solution deposition

Exploring Nanoscale Ferroelectricity in Doped Hafnium Oxide by Interferometric Piezoresponse Force Microscopy

Ferroelectricity in hafnium oxide thin films

Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Ultralarge polarization in ferroelectric hafnia-based thin films

Electrically induced strains and piezoelectric properties of thin layer ferroelectrics

Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

3D ferroelectric phase field simulations of polycrystalline multi-phase hafnia and zirconia based ultra-thin films

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films

Engineering ferroelectricity in monoclinic hafnia

Interface control of tetragonal ferroelectric phase in ultrathin Si-doped HfO2 epitaxial films

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Electric field cycling behavior of ferroelectric hafnium oxide