A Quantum Definition of Threshold Voltage in MuGFETs

S. Yun,Chong-Gun Yu,J. T. Park,Chi-Woo Lee,D. Lederer,A. Afzalian,R. Yan,J. Colinge

DOI: https://doi.org/10.1109/SOI.2007.4357890

2007-10-22

Abstract:The dependence of threshold voltage on device dimensions and number of gates is analyzed. A new definition of threshold voltage, based on quantum-mechanical considerations, is proposed.

What problem does this paper attempt to address?

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Afshan Khaliq,Wen-Yan Yin

DOI: https://doi.org/10.1109/NEMO49486.2020.9343433

2020-01-01

Abstract:In this work, quantum ballistic transport study of a Si double-gate pMOSFET has been carried out in an ultra-thin structure. The simulation is performed by using non-equilibrium Green's function (NEGF) solver that incorporates six band k . p model. Based on this framework, we analyze the device characteristics for a channel length of 5 nm considering different transport directions, confinement directions and channel thickness. In the on and off state of the device several physical parameters are necessary for performance analysis including threshold voltage, subthreshold slope, on/off current ratio. Our results confirm that for 5nm gate length, best electrical performance is obtained at (001)/[100] crystal orientation. It is observed that better ON current, subthreshold swing and lower value of tunneling ratio can be achieved by optimizing the channel thicknesses and selecting the proper crystallographic orientation for the device. The I-ON/I-OFF ratio is also calculated for both high performance and low operating power applications. We find that large channel thickness leads to worse sub-threshold slope due to the stronger source-to-drain tunneling caused by electrostatics degradation. The potential barrier and spectral current density are also presented in order to find the source-to-drain tunneling and ratio for different crystal orientations and body thickness.
Quantum Transport Study of Si Ultrathin-Body Double-Gate pMOSFETs: <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-form

Shuo Zhang,Jun Z. Huang,Afshan Khaliq,Hao Xie,Wenchao Chen,W. Yin

DOI: https://doi.org/10.1109/ted.2018.2881160

IF: 3.1

2019-01-01

IEEE Transactions on Electron Devices

Abstract:A comprehensive quantum transport study of ultrathin-body silicon double-gate pMOSFETs with gate length <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {14}$ </tex-math></inline-formula>, 10, and 7 nm is performed by in-house developed nonequilibrium Green’s function solver employing the six-band <inline-formula> <tex-math notation="LaTeX">${k} \cdot {p}$ </tex-math></inline-formula> Hamiltonian. The effects of channel length, body thickness, as well as confinement and transport crystal orientations are studied systematically. Both <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> characteristics are analyzed in this paper. Furthermore, the CMOS performance benchmarking results, such as switching delay, energy consumption, and their product, are calculated with the influence of parasitic resistances and capacitances treated in an appropriate way. It is found that the crystal orientation effect on drive current is significant at both long and short channel lengths, while its effect on effective capacitance is more observable at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm. The drive current at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {14}$ </tex-math></inline-formula> nm and <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm can be well explained by average ballistic hole velocity and source-to-drain tunneling ratio, respectively. Meanwhile, the effective capacitance is not only determined by the density of states but also affected by the distribution of holes in the confined direction. Both intrinsic and extrinsic performance assessments suggest that (001)/[100] and (110)/[001] are the optimal confinement/transport crystal orientation configurations at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {7}$ </tex-math></inline-formula> nm, while <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110}{)}/[\overline {1}\textsf {10}]$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110})/[\overline {1}\textsf {11}]$ </tex-math></inline-formula> are the best choices at longer gate lengths. As <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}$ </tex-math></inline-formula> shrinks, both intrinsic and extrinsic performances will be better at a scaled body thickness.
Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Yang Liu,Xufeng Wang,Mathieu Luisier,Mark Lundstrom

DOI: https://doi.org/10.1109/isdrs.2009.5378204

2009-01-01

Abstract:In this paper, numerical simulations were used to study the device physics in the In x Ga 1-x As MOSFETs with a gate length of 15 nm (initial) and 10 nm after optimizing the device structure. Key device metrics were identified at the ballistic limit using a 2-D Schrodinger-Poisson solver with effective masses imported from accurate tight-binding calculations. It was concluded that the simulation of a prototype for III-V quantum well MOSFETs with a gate length of 15 nm predicts decent performances if Si-matched series resistance can be obtained. The device has very high injection velocities, but suffers from significant S/D leakage under offstate. As a next step, the possibility of designing high-performance III-V MOSFETs at a gate length of 10 nm will be investigated.
Quantum Mechanical Effects on the Threshold Voltage of Surrounding-Gate Mosfets

Guanghui Mei,Peicheng Li,Guangxi Hu,Ran Liu,Lingli Wang,Tingao Tang

DOI: https://doi.org/10.1016/j.mejo.2012.05.013

2012-01-01

Abstract:In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (VTH) shift of the surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We show how VTH is influenced by QM effects with the considerations of (110)-silicon (Si) orientation and (100)-Si orientation. Both doped and undoped models are presented. The analytical results of the undoped model are compared with those obtained by Yu et al., and good agreement is observed. We show how VTH is influenced with the doping level. When the radius of an SG MOSFET is small (<5nm), the VTH shift will be significant, and one should be careful in the use of the device with an extremely small silicon body radius. We find that at very high doping levels (>1018cm−3), the VTH shift will be large.
Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Yutao Ma,Litian Liu,Zhijian Li

IF: 1.019

2000-01-01

Chinese Journal of Electronics

Abstract:In this paper, a thorough review of Quantum Mechanical Effects on nanoscale MOSFET is given. Several aspects including size quantization effects, quantum mechanical consideration of carrier mobility and quantum mechanical tunneling through ultra-thin gate oxide are briefly reviewed. Theoretical investigation method including numerical and simplified approaches are discussed and a new iteration method based on the concept of Surface Layer Effective Density-of-State (SLEDOS) is proposed. Then quantum mechanical correction models both in devices level and circuit level are discussed and a threshold modification model is given. Tunneling through ultra-thin gate oxide is reviewed from both experimental and theoretical point of view and problems in it are discussed. It is concluded that comprehensive quantum mechanical consideration in future devices is inevitable.
Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Guang-Xi Hu,Ran Liu,Zhi-Jun Qiu,Ling-Li Wang,Ting-Ao Tang

DOI: https://doi.org/10.1143/jjap.49.034001

IF: 1.5

2010-01-01

Japanese Journal of Applied Physics

Abstract:A model for a metal–oxide–semiconductor field-effect transistor (MOSFET) with a double gate (DG) is developed. Quantum mechanical effects on the threshold voltage (V TH) are modeled and investigated analytically. The analytic model shows how V TH is increased with quantum mechanical effect. The model is applicable to both symmetric DG (SDG) and asymmetric DG (ADG) nMOSFETs, and is also applicable to both doped and undoped DG nMOSFETs. The analytic results are verified by comparing with the results obtained from simulations using Schred, and good agreement is observed. The V TH of an ADG nMOSFET will shift more than that of an SDG nMOSFET, and the V TH of a DG transistor with (110)-silicon (Si) orientation will shift more than that of a DG transistor with (100)-Si orientation. When the silicon thickness t si < 3 nm, the V TH shift will be significant, and one should be careful in the use of an extremely thin silicon body. When the body doping density (N A) is not high (<1018 cm-3), the V TH shift is almost the same for different N A. When N A > 1018 cm-3, the higher the N A, the more the V TH shift.
Threshold voltage correction model for quantum short channel

Dawei Zhang,Zhiping Yu,Lilin Tian

DOI: https://doi.org/10.1109/ICSICT.2004.1436662

2004-01-01

Abstract:The fact that the quantum mechanical (QM) effects along the channel, defined as the quantum short channel effects (QSCE) non-negligibly influence device characteristics in decanano-scaled MOSFETs is highlighted. A threshold voltage correction model for the QSCE is established using the concept of "locality" and the analytical solution to 2-D Poisson equation. This model correctly reflects the relation between the QSCE and device parameters and is convenient to be embedded into SPICE models. It is concluded that the correction to threshold voltage due to the QSCE is necessary through comparison to the experimental data of a 45nm MOSFET from TSMC 45nm MOSFET, internal documentation.
MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Yutao Ma,Zhijian Li,Litian Liu

1999-01-01

Abstract:With increasing of the substrate dopant concentration and decreasing of the gate oxide thickness, the influence of quantum mechanical effects (QME) on deep-submicron MOSFET characteristics are getting more and more significant. Experiments results show that QME can result in noticeable threshold voltage (Vth) shift. In this paper, numerical solution with parabolic potential well and analytical solution with triangular well are compared, and the validity of triangular well approximation is demonstrated. Based on the calculation of the subband structure in the quantized region in weak inversion regime, the concepts of quantum effective state density and classical effective state density are proposed, the carrier distribution in subbands is analyzed and the two factors that influence the Vth shift are discussed. Finally, a quantum correction model to threshold voltage is given, which reveals the physical nature of the influence of QME on the Vth shift and gives consistent results with experiments.
Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Kajen, R.S.,Chang, K.K.F.,Ping Bai,Erping Li

DOI: https://doi.org/10.1109/NANO.2007.4601144

2007-01-01

Abstract:We present the analysis of direct tunneling (DT) gate leakage current in a 25 nm channel length n-channel metal oxide semiconductor field effect transistor MOSFET using an ensemble full band Monte Carlo (FBMC) simulation which incorporates quantum effects using Schrodinger solver. The DT current is simulated and compared with quantum drift diffusion (DD) results using DESSIS. The FBMC simulations yield DT currents one order higher than DD currents. In addition a dual thickness gate oxide structure is simulated using FBMC and DD and found to be effective in reducing the DT current.
Threshold voltage in FD-SOI MOSFETs

Georges Pananakakis,Gérard Ghibaudo,Sorin Cristoloveanu

DOI: https://doi.org/10.1016/j.sse.2024.108947

IF: 1.916

2024-05-03

Solid-State Electronics

Abstract:The threshold voltage definition and measurement in ultrathin FD-SOI MOS transistors are revisited by comparing theoretical and pragmatic extraction techniques, including novel approaches. The respective merits and limitations of methods based on the monitoring of the potential, mobile charge, gate-to-channel capacitance and drain current are emphasized. Back-gate biasing, thickness-induced quantization, potential fluctuations and surface roughness can enhance the disparity between various extraction methods. The origin of these deviations is clarified.

physics, condensed matter, applied,engineering, electrical & electronic
The Influence of Tunneling Effect and Inversion Layer Quantization Effect on Threshold Voltage of Deep Submicron Mosfets

XY Liu,JF Kang,XD Guan,RQ Han,YY Wang

DOI: https://doi.org/10.1016/s0038-1101(00)00065-4

IF: 1.916

2000-01-01

Solid-State Electronics

Abstract:Based on the studies of the two dimensional nature of electrons in inversion layer of the ultra thin gate oxide MOSFET model to describe tunneling effect and inversion layer quantization effect on deep submicron MOSFET's threshold voltage is developed. By using of this model the influence of tunneling effect and the inversion layer quantization effect on the MOSFET threshold voltage can be estimated
Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Bin Lu,Hongliang Lu,Yuming Zhang,Yimen Zhang,Xiaoran Cui,Chengji Jin,Chen Liu

DOI: https://doi.org/10.1016/j.microrel.2017.05.013

IF: 1.6

2017-01-01

Microelectronics Reliability

Abstract:In this paper, an improved analytical model of the channel surface potential in the tunnel field effect transistors is established with modified boundary conditions considering the source and drain depletion widths, avoiding the deviation of the channel potential and the overestimate on the electric field. Based on the proposed surface potential model, the threshold voltage model is also developed with the transconductance change method. The influences of the channel and oxide structures on surface potential and threshold voltage are investigated. The good agreement is obtained by the comparison of the modeling results with the numerical simulation results, verifying the validation of the proposed model, and it also implied that this model will be helpful for the further investigation of TFETs.
Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

Peicheng Li,Guangxi Hu,Ran Liu,Tingao Tang

DOI: https://doi.org/10.1016/j.mejo.2011.06.002

IF: 1.992

2011-01-01

Microelectronics Journal

Abstract:The threshold voltage, Vth of a double-gate (DG) Schottky-barrier (SB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential is obtained by using Gauss's law and solving Poisson's equation, the results of which are compared with simulations, and good agreement is observed. Based on the potential model, a new definition for Vth is developed, and an analytic expression for Vth is obtained, including quantum mechanical effects and SB lowering effect. We find that Vth is very sensitive to the silicon body thickness, tsi. For a device with a small tsi (<3nm), Vth increases dramatically with the reduction of tsi. Vth decreases with the increase of the back-gate oxide thickness, and with the increasing of the drain bias. All the results can be of great help to the ultra-large scale integrated-circuit (ULSI) designers.
Threshold Voltage Model for 2-D FETs with Undoped Body and Gated Source

Cristine Jin Estrada,Zichao Ma,Lining Zhang,Mansun Chan

DOI: https://doi.org/10.1109/ted.2023.3255833

2023-01-01

Abstract:In this article, a threshold voltage model for two-dimensional (2-D) materials-based field-effect transistors (FETs) with an undoped body and a gated source is derived based on an analytical solution to Poisson’s equation at the source region. The effect of fringing fields on the underlapped region for the case when the gate has almost no overlap with the source is also studied and incorporated using conformal mapping. The derived threshold voltage model highlights the dependence of the turn-on condition on the barrier height at the metal/2-D interface, the geometry of the device, particularly on the 2-D film and oxide thickness, and the gate-to-source overlap length. Modifications on the barrier height at the metal/2-D junction due to the widely observed metal Fermi level pinning (FLP) effect on fabricated devices are also integrated. The proposed new model is verified by numerical simulations and published experimental data with close agreement.
Multiple-Gate FET Quantum Dot Behavior and a Proximity Charge Sensing Model

Deepesh Sharma,Sujit Kumar Singh,Alexander Grill,Abhisek Dixit

DOI: https://doi.org/10.1109/ted.2024.3393947

IF: 3.1

2024-05-25

IEEE Transactions on Electron Devices

Abstract:Quantum dot (QD) formation in multiple-gate FETs is a promising solution to scale QD-based devices. In this work, we report on the superiority of the quantum mode performance of SOI-gate-all-around nanowire FETs (GAA NWFETs) compared to the bulk FinFETs. A classical comparison is followed by an investigation based on the quantum perspective. The Coulomb blockade region is analyzed through the drain current oscillations at cryogenic temperatures. Performance metrics of the FET channel QDs are compared. NWFETs show better quantum confinement properties at much relaxed geometries than the bulk FinFETs, which makes them a potential candidate for scalable integration of QD-based qubits for the quantum processing units (QPUs). To assist in the design of QD-based charge/spin qubits, a subcircuit-based proximity charge sensing model is proposed. The model augments the existing BSIM CMG-based compact model to capture the charge sensing characteristics of a single-electron transistor (SET). This, in turn, can aid the layout design for CMOS-based QPUs.

engineering, electrical & electronic,physics, applied
A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Zhijun Lyu,Hongliang Lu,Chen Liu,Yuming Zhang,Yimen Zhang,Yi Zhu,Jiale Sun,Bin Lu,Ziji Jia,Mengqing Zhao

DOI: https://doi.org/10.1109/TED.2022.3195474

IF: 3.1

2022-01-01

IEEE Transactions on Electron Devices

Abstract:Gate–source overlap tunneling FETs (GSO-TFETs) as a novel ternary device are very promising in low-power neuromorphic circuits. In this article, an accurate potential model of the ternary GSO-TFETs is presented for the face-tunnel region considering the quasi-mobile charges (QMCs) based on the analysis of the face-tunnel mechanism. Then a potential-based analytical current model is developed for the first time to predict the face-tunnel process and line-tunnel current simultaneously with both the gate and the drain modulations. The modeling results are validated with TCAD simulations and good agreement within a wide biasing range is achieved, which indicates the great potential of this SPICE-friendly model for the tunneling-based ternary device in the commercial IC design fields.
A Threshold Voltage Model for GaN-based Heterostructure-Free Normally-off FinFET

Haisheng Qian,Guangxi Hu,Ran Liu,Lirong Zheng,Xing Zhou

DOI: https://doi.org/10.1109/icsict.2016.7998652

2016-01-01

Abstract:An analytical model for threshold voltage of the normally-off GaN-based fin-shaped field-effect transistor (FinFET) is obtained. Analytical expressions for the threshold voltage and its roll-off effect are presented. Some design insights can be obtained from the results. The explicit expression for threshold voltage makes the model suitable to be embedded in circuit simulation and design tools.
Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Suparna Panchanan,Reshmi Maity,Achinta Baidya,Niladri Pratap Maity

DOI: https://doi.org/10.1088/2631-8695/acd23a

IF: 1.7

2023-05-19

Engineering Research Express

Abstract:An inversion charge-based threshold voltage model is proposed for 10 nm channel length Tri-gate (TG) FinFET. The variation threshold voltage has been studied with respect to fin width W f i n for different fin height H f i n and channel length L . The effect of width quantization has been explained with the help of the quantum mechanical effect (QME). A precise comparison of threshold voltage in terms of classical mechanics and quantum mechanics depicts the presence of width quantization in short channel device. The improvement of the short channel effects (SCEs), like subthreshold swing (SS), drain-induced barrier lowering (DIBL) and threshold voltage roll off have been studied. The impact of channel length to fin width ratio on DIBL and S S has been examined. The improvement of the SCEs at the same oxide thickness has been observed for high-k dielectric material. The potential and effect of hafnium oxide (HfO 2 ) have been discussed and validated using technology computer-aided design (TCAD) simulation.
Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Zhang Dawei,Tian Lilin,Yu Zhiping

DOI: https://doi.org/10.1109/icecds.2017.8389713

2005-01-01

Chinese Journal of Semiconductors

Abstract:The field effect transistor fabricated in integrated circuits are majorly with junctions. Due to scaling of devices, these junctions have becoming increasingly difficult to fabricate. And also high doping concentration gradient is the stringent requirement for smooth functioning of the device. The newer devices have been proposed and demonstrated in which there are no junctions and no gradients of doping. One such device is the Double Gate Metal Oxide Semiconductor Field Effect Transistor (DG-MOSFET) without junction which shows remarkable performance against short channel effects such as threshold voltage roll-off, Drain Induced Barrier Lowering (DIBL), etc. In this paper, a two dimensional model of threshold voltage is considered to study the performance of DG-MOSFET. The model used shows how the DG-MOSFET parameters such as the gate channel length, gate oxide thickness, drain to source voltage, and channel thickness, affect the threshold voltage degradation.
Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Pei Liang,Jianjun Jiang,Yi Song

DOI: https://doi.org/10.1088/0022-3727/41/21/215109

2008-01-01

Abstract:A physical, compact, short-channel sub-threshold swing model for undoped-gate MOSFETs has been developed to include the fringe-induced barrier lowering effect associated with high-permittivity (high-kappa)gate dielectrics. Using this new device model, we found that the degradation becomes worse when the channel length becomes shorter and both the off-state current (I(off)) and sub-threshold slope(s) rollup when. is increased. It is indicated that a way to keep a reasonable channel length/vertical physical thickness ratio could be to suppress the FIBL effect in nanoscale DG MOSFET. The result showed that the analytical model was in agreement with the published numerical simulation over a wide range of device parameters.

A Quantum Definition of Threshold Voltage in MuGFETs

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Simulation Study of Device Physics Issues in III&amp;#x2013;V MOSFETs at 10 Nm Node

Quantum Mechanical Effects on the Threshold Voltage of Surrounding-Gate Mosfets

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Threshold voltage correction model for quantum short channel

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Threshold voltage in FD-SOI MOSFETs

The Influence of Tunneling Effect and Inversion Layer Quantization Effect on Threshold Voltage of Deep Submicron Mosfets

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

Threshold Voltage Model for 2-D FETs with Undoped Body and Gated Source

Multiple-Gate FET Quantum Dot Behavior and a Proximity Charge Sensing Model

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

A Threshold Voltage Model for GaN-based Heterostructure-Free Normally-off FinFET

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Simulation Study of Device Physics Issues in III–V MOSFETs at 10 Nm Node