Isoimmune neonatal purpura. Case report and review.

C. Pochedly,E. Merson,M. Fotino

1970-06-01

Journal of reproductive medicine

Abstract:

What problem does this paper attempt to address?

Internal Friction Study of Ambient Aging Behaviors of Irradiated Tungsten by Si/H Ions

Jing Hu,Xian-Ping Wang,Qian-Feng Fang,Zi-Qiang Zhao,Yan-Wen Zhang,Chang-Song Liu

DOI: https://doi.org/10.1007/s11706-013-0196-6

2013-01-01

Abstract:The aging behaviors of irradiated tungsten by high energy Si3+ and H+ ions are mainly investigated using internal friction (IF) method combined with SEM technology. The SEM analysis indicates that more severe irradiation damage appears in the surface of simultaneous dual Si3+ + H+ irradiated specimen than that in the sequential dual Si3+ + H+ irradiated specimen or the single Si3+ irradiated specimens because of the synergistic effect of Si and H irradiation. The IF background of the irradiated sample is about one order of magnitude higher than that of the unirradiated sample owing to the existence of high density fresh dislocations induced by Si/H irradiation. In the sequential dual Si3+ and H+ irradiated specimen, the hydrogen Snoek-Kê-Köster (SKK) peak associated with the movement of dislocations dragging hydrogen atoms is observed and its height decreases with aging time at room temperature. As for the simultaneous dual Si3+ + H+ irradiated specimen, however, there is no such hydrogen SKK peak. The reason can be explained as hydrogen diffusion and pinning effect of dislocations.
Irradiation Defects in Silicon Crystal

WUCheng-long,YANGDe-ren

2003-01-01

Abstract:The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.
Grain Boundary Effects on Defect Production and Mechanical Properties of Irradiated Nanocrystalline Sic

Enze Jin,Li-Sha Niu,Enqiang Lin,Xiaoxiong Song

DOI: https://doi.org/10.1063/1.4723648

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:Grain boundaries (GBs) are known to play an important role in determining the mechanical and functional properties of nanocrystalline materials. In this study, we used molecular dynamics simulations to investigate the effects of damaged GBs on the mechanical properties of SiC that is irradiated by 10 keV Si atoms. The results reveal that irradiation promotes GB sliding and reduces the ability of GBs to block dislocations, which improves the deformation ability of nanocrystalline SiC. However, irradiation causes local rearrangements in disordered clusters and pinning of dislocations in the grain region, which restrains its deformation. These two mechanisms arise from the irradiation effects on GBs and grains, and these mechanisms compete in nanocrystalline SiC during irradiation. The irradiation effects on GBs dominate at low irradiation doses, and the effects on grains dominate at high doses; the result of these combined effects is a peak ductility of 0.09 dpa in nanocrystalline SiC.
Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Yuxin Sun,Wu Lan,Tong Zhao,Jianjiang Zhao,Defan Wu,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1063/5.0029813

IF: 2.877

2020-01-01

Journal of Applied Physics

Abstract:Improving the mechanical strength of Czochralski (CZ) silicon is of significance for increasing the manufacturing yield of integrated circuits. In this work, we have comparatively investigated the dislocation gliding behaviors in the conventional CZ silicon, nitrogen (N)-doped CZ silicon, germanium (Ge)-doped CZ silicon as well as Ge and N co-doped CZ silicon subjected to the indentations for 30 min at different temperatures in the range of 850–1050 °C with an interval of 50 °C. It is found that the suppressing effect of N-doping on the dislocation gliding is strongest at 950 °C and becomes slightly weakened at higher temperatures, while Ge-doping does not exert a remarkable suppressing effect on the dislocation gliding until the temperature exceeds 950 °C. The co-doping of N and Ge impurities takes both advantages of N- and Ge-doping to suppress the dislocation gliding in CZ silicon at the aforementioned temperatures. More importantly, at 1000 and 1050 °C that are the typical processing temperatures for integrated circuits, the N and Ge co-doping exhibits a stronger suppressing effect on the dislocation gliding in CZ silicon than the single Ge- or N-doping. This indicates that the mechanical strength of CZ silicon in terms of the resistance of dislocation gliding at a high temperature can be further improved by co-doping Ge and N impurities. It is believed that the N-doping can result in the formation of larger grown-in oxygen precipitates and N–O complex-related pinning agents within the dislocations to suppress the dislocation gliding at 850–1050 °C with the strongest suppressing effect at 950 °C, while the suppressing effect of Ge-doping on the dislocation gliding at the temperatures exceeding 950 °C is tentatively ascribed to the formation of Ge–O complexes near the front of the dislocation lines.
Photoluminescence from Dislocations in Silicon Induced by Irradiation of Electron Beams

Luelue Xiang,Dongsheng Li,Lu Jin,Deren Yang

DOI: https://doi.org/10.1109/group4.2010.5643396

2010-01-01

Abstract:We induced dislocations controllably by using irradiation of electron beam. The dislocations induced by irradiation slipped though whole wafer and well-distributed at its slipping direction {111} <100> with a density highest to ∼1.3×107 cm−2. And dislocations related luminescence (DRL) peaks from D1 to D4 were observed in the irradiated silicon. This method may lead to the silicon based light emitting device with the compatibility of integrated circuit technology.
Mechanical and optical property assessment of irradiated SiC with displaced atoms

Fei Yang,Weipeng Wang,Dong Wang,Fei Zhu,Shuming Peng,Zhengjun Zhang

DOI: https://doi.org/10.1016/j.jeurceramsoc.2021.03.020

IF: 5.7

2021-07-01

Journal of the European Ceramic Society

Abstract:<p>Explicit method to emulate neutron radiation effects on key ceramic materials is lacking, with most literatures stressing direct comparison between radiation parameters while underestimating the defect-property correlation. Herein, the evolutionary correlation between defects of displaced atoms and properties in 6H-SiC was systematically investigated, aiming to found the basis for performance assessment of neutron irradiated material. The point defect accumulation, defect cluster growth, and homogeneous crystalline-amorphous (c-a) transition were recognized, with different stages of Young's modulus reduction and optical absorption enhancement accordingly triggered. Specifically, the relaxation process accompanying the c-a transition was believed to induce the final reduction stage of Young's modulus and account for the conflict between existing research results. Average lattice disorder, regarded as the average density of displaced atoms, was proved to be the success reference in the property assessment approach, paving the way for the extension into high temperature radiation where more defect types coexist.</p>

materials science, ceramics
Gamma-Rays Irradiation - an Effective Method for Improving Light-Emission Stability of Porous Silicon

JS FU,JC MAO,E WU,YQ JIA,BR ZHANG,LZ ZHANG,GG QIN,GS WUI,YH ZHANG

DOI: https://doi.org/10.1063/1.110677

IF: 4

1993-01-01

Applied Physics Letters

Abstract:We report a study on gamma irradiated porous Si. The electron paramagnetic resonance study on porous Si irradiated by gamma rays shows that the observed signals come from an intrinsic defect, a Si dangling bond, at the interface of Si/SiO(x) in porous Si. The photoluminescence measurements show that the gamma irradiation not only increases the intensity of the photoluminescence but also greatly improves its stability. The spectra of the Fourier transform infrared absorption show that the gamma irradiation is an effective method for accelerating oxidation of porous Si. All experimental results can be explained by the increase of the oxidation layer thickness which decreases the nonradiative recombination probability of electron-hole pairs.
Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

K. Wieteska,A. Misiuk,M. Prujszczyk,W. Wierzchowski,Barbara Sgorbini,J. Bąk‐Misiuk,P. Romanowski,A. Shalimov,Ivana Capan,Deren Yang,W. Graeff

DOI: https://doi.org/10.12693/aphyspola.114.439

2008-01-01

Acta Physica Polonica A

Abstract:Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (c O ) up to 1.1 × 10 18 cm -3 , admixed with N or Ge (Si-N, c N ≤ 1.2 × 10 15 cm -3 , or Si-Ge, cGe ≈ 7 × 10 17 cm -3 , respectively), pre-annealed at up to 1400 K and next irradiated with γ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography.Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation.It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
Performance degradation mechanism of γ-ray irradiated sol-gel silica film

Bo Li,Jianlei Guo,Lijie Sun,Guixia Yang,Huahai Shen,Xia Xiang,Xiaotao Zu

DOI: https://doi.org/10.1016/j.jnoncrysol.2023.122666

IF: 4.458

2023-10-06

Journal of Non-Crystalline Solids

Abstract:γ-ray radiation effect on sol-gel silica films was investigated at different absorbed doses ranging from 10 kGy to 1000 kGy. The defect and microstructure evolutions of silica films were analyzed to understand the performance degradation behavior and mechanism of the γ-ray irradiated silica films. The cracks appear on the silica film surface and further expand at larger γ-ray absorbed dose, while surface roughness slightly decreases. During γ-ray irradiation, the thermal effect and the increased rate of diffusion-controlled process lead to the condensation of Si-OH groups and the recombination of ODCs. However, the ionization of atoms leads to generation and accumulation of E′ centers and NBOHCs. γ-ray irradiation leads to the reductions of bond lengths and bond angles of Si-O-Si groups, thus causing the densification of films. The refractive index and mechanical property firstly enhance and then reduce with the increase of absorbed dose associated with the change of silica film density. After γ-ray irradiation, the decreased contact angle and increased surface free energy indicate the reduction of anti-pollution ability of silica films. The dose-dependent surface quality, defects and mechanical properties determine the variation in laser-induced damage threshold (LIDT) of silica film. The results provide a reference to control the structural damage and performance degradation of silica films, which is very important for the research of safe operation of high-power laser facilities for inertial confinement fusion (ICF).

materials science, multidisciplinary, ceramics
Effect of Prior Stress-Relief on the Gliding of Indentation Dislocations on Silicon Wafers

Zhao Ze-Gang,Tian Da-Xi,Zhao Jian,Liang Xing-Bo,Ma Xiang-Yang,Yang De-Ren

DOI: https://doi.org/10.7498/aps.64.208101

IF: 0.906

2015-01-01

Acta Physica Sinica

Abstract:The mechanical strengths of silicon wafers are crucial for the manufacturing yield of integrated circuits (ICs), which have received intensive attention over the years. With reducing the feature size of ICs, the mechanical strengths of silicon wafers become more significant. Actually, the gliding of indentation dislocations on single-crystalline silicon wafers at a given temperature reflects the mechanical strengths of silicon wafers. Since the gliding of indentation dislocations is driven by the residual stress around the indentation, the investigation on the correlation between the residual stress and dislocation gliding is of significance. In this paper, we first use micro-Raman microscopy to characterize the relief of stress around the indentation due to the annealling at 300 or 500 ℃. Then the effect of such a relief-stress on the gliding of indentation dislocations at 700-900 ℃ is investigated. In the case without the prior stress-relief, the indentation dislocations glide to the maximum distance after 2 h annealling at 700-900 ℃. With the prior stress-relief due to the annealling at 300 or 500 ℃, the indentation dislocations can still glide to the maximum distance after 2 h annealling at 900 ℃, however the gliding velocity significantly decreases and the gliding distance is remarkably reduced after 2 h annealling at 700 or 800 ℃. Such a reduction of gliding distance is most significant in the case of 700 ℃ annealling following the stress-relief with the 500 ℃/2 h annealling. Despite the prior stress-relief, as long as the annealing time at 700 or 800 ℃ is sufficiently extended, the indentation dislocations can glide to the maximum distance. In view of the above results, it is believed that the maximum gliding distance of indentation dislocations at a given temperature is independent of the values of residual stress around the indentation provided that the residual stresses are larger than the critical stress for driving the dislocation movement. Nevertheless, the annealing time for achieving the maximum gliding distance at a given temperature should be remarkably extended as the residual stresses around the indentation are relieved.
Images in cardiothoracic surgery. Aortobronchial fistula.

A. Apaydin,J. Camuñas,M. Ergi̇n

Abstract:
Gamma‐ray irradiation effect on microstructure and physical performances of porous silica

Qingyi Feng,Hongxiang Deng,Biyi Wang,Bo li,Xia Xiang,Li Li,Bo Zhong,Sean Li,Xiaotao Zu

DOI: https://doi.org/10.1111/jace.19323

IF: 4.186

2023-07-14

Journal of the American Ceramic Society

Abstract:In this paper, the gamma irradiation effect on the microstructure and physical performances of porous silica, including mechanical, thermal and optical performances, are systematically investigated by using molecular dynamics and Density‐Functional theory‐based methods. The study of Bond angle distribution, Si–O pair distribution function, coordination number distribution and average ring size distribution show that, after gamma‐ray irradiation, the microstructure of porous silica is obviously modified. The tight packing of SiO2 tetrahedrons in the porous silica network is broken by gamma‐ray irradiation. Defects of three‐coordinated Si and non‐bridging oxygen is induced by gamma‐ray irradiation. Moreover, we find that the defects concentrations rapid growth as gamma‐ray dose increases. The mechanical, thermal and optical performances of porous silica are all seriously degenerated by gamma‐ray irradiation. Our results show that, for mechanical performance, Young's modulus, Bulk modulus and Shear modulus firstly decrease and then keep stable as gamma‐ray dose increases, but the change of Poisson's ratio is slight. For thermal performance, the thermal conductivity decreases exponentially as gamma‐ray dose increases. For optical performance, light absorption coefficients increase exponentially and light transmittance drops as gamma‐ray dose increases in the working range (photon energy range around 3.5 eV) of inertial confinement fusion. Present work is expected to be valuable for studying the degradation mechanism of silicate materials under gamma radiation and developing gamma‐ray irradiation protection technology. This article is protected by copyright. All rights reserved

materials science, ceramics
Effects of Vacancy Defects on the Mechanical Properties in Neutron Irradiated Czochralski Silicon

Shangjie Jin,Peng Wang,Yazhou Qin,Can Cui,Deren Yang,Xuegong Yu

DOI: https://doi.org/10.1088/1361-648x/ab7e5d

2020-01-01

Journal of Physics Condensed Matter

Abstract:We have investigated the mechanical properties of neutron irradiated Czochralski (NICZ) silicon using nanoindentations combined with micro-Raman spectroscopy. It is found that NICZ silicon shows higher hardness (similar to 13% higher) than non-irradiated silicon, with a slightly lower Young's modulus. When the samples were subjected to isochronal anneals in the temperature range of 250 degrees C-650 degrees C, the hardness of NICZ silicon gradually decreases as the temperature increases and it is finally comparable to that of the non-irradiated silicon. The vacancies and vacancy-oxygen defects induced by neutron irradiation in NICZ silicon annihilate or transform into more complex defects during the annealing processes. It suggests that the vacancy defects play a role in the evolution of hardness, which promote phase transition from the Si-I phase to the stiffer Si-II phase in NICZ silicon during indentation. In addition, the irradiation induced vacancy defects could lead to the lower Young's modulus.
Positron Annihilation Study of Silicon Irradiated by Different Neutron Doses

XT MENG,W PUFF

DOI: https://doi.org/10.1088/0953-8984/6/26/019

1994-01-01

Journal of Physics Condensed Matter

Abstract:Single crystals of silicon grown in an argon atmosphere were irradiated with three different neutron doses: 6 x 10(16), 3.6 x 10(17) and 1.2 x 10(18) cm-2. Positron annihilation spectroscopy indicates that there are two distinct annealing stages of V-type defects in the three neutron-irradiated silicon samples: one at about 200-degrees-C and another at about 500-degrees-C. The former is due to the annealing out of P-V and (V2-O)- complexes; the latter is due to the annealing out of (V2-O)0 complexes. For samples.irradiated with two different higher neutron doses, the intensity due to the radiation-induced monovacancy-type defects is above 58% and disappears at 550-degrees-C; the intensity due to the radiation-induced divacancies is above 23%, increases above 200-degrees-C and disappears at 600-650-degrees-C. For the sample irradiated with a lower neutron dose the intensity due to the divacancies is only 7.3%, it disappears below 200-degrees-C, and no secondary divacancies appear. The intensity due to the secondary divacancies is highly dependent on the neutron dose. There are two annealing stages Of V2 -type defects at 150-200-degrees-C and about 600-degrees-C. The former is due to the approach of interstitial silicon atoms to divacancies localized in the cores of neutron-radiation-disordered regions, and the latter is due to annealing out of divacancies in the 'undisturbed' matrix of the silicon crystal and V3-O complexes. For samples irradiated with two different higher neutron doses, monovacancy-type defects with higher intensities appear again at 600-650-degrees-C, which indicates the nature of the '600-650-degrees-C acceptor'. Above 700-degrees-C, many dislocations with 231 ps less-than-or-equal-to tau less-than-or-equal-to 239 ps (sometimes both dislocations and monovacancy-type defects (240 ps less-than-or-equal-to tau less-than-or-equal-to 266 ps)), are formed, especially for samples irradiated with higher neutron doses.
Gamma Ray Irradiated Silicon Nanowires: an Effective Model to Investigate Defects at the Interface of Si/Siox

Kui Yin,Yi Zhao,Wang Xiaoliang,Liangbin Liu,Gi Xue,Shuit-Tong Lee,Mingwang Shao

DOI: https://doi.org/10.1063/1.4863310

IF: 4

2014-01-01

Applied Physics Letters

Abstract:The effect of gamma ray irradiation on silicon nanowires was investigated. Here, an additional defect emerged in the gamma-ray-irradiated silicon nanowires and was confirmed with electron spin resonance spectra. 29Si nuclear magnetic resonance spectroscopy showed that irradiation doses had influence on the Q4 unit structure. This phenomenon indicated that the unique core/shell structure of silicon nanowires might contribute to induce metastable defects under gamma ray irradiation, which served as a satisfactory model to investigate defects at the interface of Si/SiOx.
Study of Gamma-Ray Radiation Effects on the Passivation Properties of Atomic Layer Deposited Al2O3 on Silicon Using Deep-Level Transient Spectroscopy

Zhe Chen,Peng Dong,Meng Xie,Yun Li,Xuegong Yu,Yao Ma

DOI: https://doi.org/10.1007/s10854-018-0383-4

2018-01-01

Journal of Materials Science Materials in Electronics

Abstract:Aluminum oxide (Al 2 O 3 ) has emerged as a potential dielectric material and exhibited an excellent passivation property on silicon surface. However, such oxide layer is extremely sensitive to γ-ray irradiation. In this work, deep-level transient spectroscopy has been applied to study the influence of γ-ray irradiation on the passivation properties of atomic layer deposited Al 2 O 3 on silicon. It is shown that γ-ray irradiation leads to a significant increase of interface state density ( D it ). Meanwhile, its energy distribution is broadened and shifts deeper with respect to the top of valence band, and therefore evolves into more efficient recombination centers for carriers. Besides, capacitance–voltage ( C–V ) curves shows a progressive shift toward the negative voltages with increased radiation doses. This indicates the hole trapping in Al 2 O 3 , which can neutralize the negatively charged defects and therefore degrade its field-effect passivation. Hence, the passivation quality of Al 2 O 3 on silicon deteriorates significantly after γ-ray radiation.
Influence of neutron radiation dose on annealing behavior of defects in c-Si

XiangTi Meng

1994-01-01

Abstract:The annealing behavior of defects in FZ silicon grown in argon atmosphere and irradiated with different neutron doses had been studied by positron annihilation lifetime and Doppler broadening measurements. The radiation-induced monovacancy-type defects have very similar annealing behavior for FZ silicon irradiated with different neutron doses, and can be annealed out at 550��C, but the concentration of radiation-induced divacancy, the production, concentration and annealing out temperature of secondary divacancy and quadrivacancy type defects are quite different. The simple trapping model seems not suitable for FZ silicon irradiated with high neutron dose and annealed at the temperature lower than 500��C, however it is suitable partially for that irradiated with middle neutron dose.
Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Alexander J. Leide,Richard I. Todd,David E. J. Armstrong

DOI: https://doi.org/10.1007/s11837-021-04636-8

2021-05-07

JOM

Abstract:Abstract Silicon carbide is desirable for many nuclear applications, making it necessary to understand how it deforms after irradiation. Ion implantation combined with nanoindentation is commonly used to measure radiation-induced changes to mechanical properties; hardness and modulus can be calculated from load–displacement curves, and fracture toughness can be estimated from surface crack lengths. Further insight into indentation deformation and fracture is required to understand the observed changes to mechanical properties caused by irradiation. This paper investigates indentation deformation using high-resolution electron backscatter diffraction (HR-EBSD) and Raman spectroscopy. Significant differences exist after irradiation: fracture is suppressed by swelling-induced compressive residual stresses, and the plastically deformed region extends further from the indentation. During focused ion beam cross-sectioning, indentation cracks grow, and residual stresses are modified. The results clarify the mechanisms responsible for the modification of apparent hardness and apparent indentation toughness values caused by the compressive residual stresses in ion-implanted specimens.

materials science, multidisciplinary,metallurgy & metallurgical engineering,mining & mineral processing,mineralogy
Effect of Irradiation on Mechanical Properties of Symmetrical Grain Boundaries Investigated by Atomic Simulations

X. Y. Wang,N. Gao,W. Setyawan,B. Xu,W. Liu,Z. G. Wang

DOI: https://doi.org/10.1016/j.jnucmat.2017.04.051

IF: 3.555

2017-01-01

Journal of Nuclear Materials

Abstract:Tensile response of irradiated symmetric grain boundaries to the externally applied strain has been studied using atomic simulation methods. The absorption of irradiation induced defects by grain boundaries has been confirmed to degrade the mechanical properties of grain boundaries through the change of its undertaken deformation mechanism. Atomic rearrangement, the formations of a stress accumulation region and vacancy-rich zone and the nucleation and movement of dislocations under stress effect have been observed after the displacement cascades in grain boundaries, which are considered as main reasons to induce above degradation. These results suggest the necessity of considering both trapping efficiency to defects and the mechanical property change of irradiated grain boundaries for further development of radiation resistant materials.
Influence of temperature and strain on the amplitude-dependent internal friction of high-purity aluminum

S. N. Golyandin,K. V. Sapozhnikov,Yu. A. Emel’yanov,A. B. Sinani,S. P. Nikanorov,S. B. Kustov,W. H. Robinson

DOI: https://doi.org/10.1134/1.1130631

1998-10-01

Physics of the Solid State

Abstract:The dislocation amplitude-dependent friction (ADIF) of high-purity (99.999%) polycrystalline aluminum is investigated in the temperature range 7–300K at vibrational strain amplitudes of 10−7–10−4 for samples in the annealed and deformed (by quasistatic, shock, and ultrasonic loading) states. The ADIF is a multistage effect in the indicated temperature and vibration amplitude ranges. Analysis of the amplitude-temperature spectra of the ADIF permits separation of components attributable to: interaction between dislocations, the interaction of dislocations with pinning points, and pure dislocation relaxation (the interaction of dislocations with the Peierls relief). ADIF is observed to depend nonmonotonically on the initial quasistatic strain determined by strain hardening and recovery processes.

physics, condensed matter

Isoimmune neonatal purpura. Case report and review.

Internal Friction Study of Ambient Aging Behaviors of Irradiated Tungsten by Si/H Ions

Irradiation Defects in Silicon Crystal

Grain Boundary Effects on Defect Production and Mechanical Properties of Irradiated Nanocrystalline Sic

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Photoluminescence from Dislocations in Silicon Induced by Irradiation of Electron Beams

Mechanical and optical property assessment of irradiated SiC with displaced atoms

Gamma-Rays Irradiation - an Effective Method for Improving Light-Emission Stability of Porous Silicon

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Performance degradation mechanism of γ-ray irradiated sol-gel silica film

Effect of Prior Stress-Relief on the Gliding of Indentation Dislocations on Silicon Wafers

Images in cardiothoracic surgery. Aortobronchial fistula.

Gamma‐ray irradiation effect on microstructure and physical performances of porous silica

Effects of Vacancy Defects on the Mechanical Properties in Neutron Irradiated Czochralski Silicon

Positron Annihilation Study of Silicon Irradiated by Different Neutron Doses

Gamma Ray Irradiated Silicon Nanowires: an Effective Model to Investigate Defects at the Interface of Si/Siox

Study of Gamma-Ray Radiation Effects on the Passivation Properties of Atomic Layer Deposited Al2O3 on Silicon Using Deep-Level Transient Spectroscopy

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Effect of Irradiation on Mechanical Properties of Symmetrical Grain Boundaries Investigated by Atomic Simulations

Influence of temperature and strain on the amplitude-dependent internal friction of high-purity aluminum