Enhanced performance of phase change memory by grain size reduction

Yuan Xue,Sannian Song,Xiaogang Chen,Shuai Yan,Shilong Lv,Tianjiao Xin,Zhitang Song

DOI: https://doi.org/10.1039/d1tc06045g

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:Phase change memory based on Ta-GST exhibits superior thermal stability and reliability, so it is expected to be used in high-temperature applications.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Mingyue Shao,Yang Qiao,Yuan Xue,Sannian Song,Zhitang Song,Xiaodan Li

DOI: https://doi.org/10.3390/nano13040633

IF: 5.3

2023-02-05

Nanomaterials

Abstract:Phase change memory (PCM), a typical representative of new storage technologies, offers significant advantages in terms of capacity and endurance. However, among the research on phase change materials, thermal stability and switching speed performance have always been the direction where breakthroughs are needed. In this research, as a high-speed and good thermal stability material, Ta was proposed to be doped in Sb3Te1 alloy to improve the phase transition performance and electrical properties. The characterization shows that Ta-doped Sb3Te1 can crystallize at temperatures up to 232 °C and devices can operate at speeds of 6 ns and 8 × 104 operation cycles. The reduction of grain size and the density change rate (3.39%) show excellent performances, which are both smaller than that of Ge2Sb2Te5 (GST) and Sb3Te1. These properties conclusively demonstrate that Ta incorporation of Sb3Te1 alloy is a material with better thermal stability and faster crystallization rates for PCM applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Improving the Performance of Phase-Change Memory by Grain Refinement

Wen-Xiong Song,Yan Cheng,Daolin Cai,Qiongyan Tang,Zhitang Song,Lihua Wang,Jin Zhao,Tianjiao Xin,Zhi-Pan Liu

DOI: https://doi.org/10.1063/5.0011983

IF: 2.877

2020-01-01

Journal of Applied Physics

Abstract:Many experiments have shown that three-dimensional-confined grain refinement (GR) textures in phase-change memory reduce power consumption and improve endurance performance. However, a lack of knowledge on the GR mechanisms and their influence on device performances challenges designs that concurrently enhance the comprehensive device performances using the same impurity-doped strategy. Here, we experimentally observe dramatic GR in carbon-doped Ge2Sb2Te5 (GST), which also presents reduced power consumption and enhanced endurance performances. We provide low power consumption evidence that thermal conductivity controls the thermal transport heat loss and is proportional to the size of nanoscale grains because the boundary severely scatters phonons. Our simulations indicate that the short carbon chains in the boundary interlace with each other and trend to form trialkyl carbon atoms that constitute the basic local environment of graphene. The stable sheet consists of aggregated carbon, which is even stable above the melting temperature of GST and acts as a second-phase drag to refine the grain size. The enhanced endurance is explained by the restricted migration from the stable carbon sheet, which is verified by the greatly reduced diffusion coefficient of the host atoms in the boundary because of the less shielding effect from the core electrons in carbon and strong bonds formed between host and carbon atoms. Our findings show that the reduced power consumption and enhanced endurance from GR engineering are feasible in phase-change memory, which has been largely overlooked.
Materials For Phase-Change Memory With Elevated Temperature Stability

kinfu kao,yungching chu,mingjinn tsai,tsungshune chin

DOI: https://doi.org/10.1063/1.4714711

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:Thermal stability is one of the key issues in phase-change memory. We try to tackle it by developing new compositions based on Ga-Te-Sb system. Thermal stability is exemplified using Ga18Te12Sb70 which shows crystallization-temperature (T-x) 248 degrees C and activation energy of non-isothermal crystallization 5.9 eV. Films were isothermally soaked at 5 similar to 30 degrees C below T-x to estimate the failure-time when electrical resistance dropped to a half of the original. Arrhenius plot attained using logarithm failure-time versus reciprocal temperature were extrapolated to the temperature corresponding to 10-year failure (T-10y) as 183 degrees C. Pre-crystallization structure upon heating to 2 similar to 5 degrees C below Tx reflects stable amorphous phase of the alloy up to at least 240 degrees C. Memory-cells made of Ga18Te12Sb70 can be set-reset at 20 similar to 500 ns with electrical currents around 66% those of our Ge2Sb2Te5 cells. We suggest that compositions Ga18-25Te8-12Sb67-70 are optimal to ensure T-x > 240 degrees C, T-10y > 180 degrees C and with low operation-currents. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714711]
The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Hao Wang,Tianqi Guo,Yuan Xue,Shilong Lv,Dongning Yao,Zhiguo Zhou,Sannian Song,Zhitang Song

DOI: https://doi.org/10.1016/j.matlet.2019.07.031

IF: 3

2019-01-01

Materials Letters

Abstract:The GSST (Ge-Sb-Se-Te) alloy has been investigated to be a competitive material choice for high density phase-change memory with robust data retention by introducing the doped Se and the excess Ge in Ge-Sb-Te ternary system. The Se dopants are found to increase the crystallization temperature and reduce the grain size. And the excess Ge atoms play a vital role in promoting the thermal stability of doped alloy. The reversible memory switching capability evidences that the GSST alloy is a potential reliable phase-change material in storage application for automobile systems. (C) 2019 Elsevier B.V. All rights reserved.
Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Yuan Xue,Yan Cheng,Yonghui Zheng,Shuai Yan,Wenxiong Song,Shilong Lv,Sannian Song,Zhitang Song

DOI: https://doi.org/10.1016/j.mtphys.2020.100266

IF: 11.021

2020-12-01

Materials Today Physics

Abstract:To date, high Reset energy and the contradiction between crystallization speed and amorphous thermal stability are still bottlenecks for phase change memory (PCM) to achieve universal memory. Here, we demonstrate PCM based on Ta0.3Sb2Te3 alloy, showing 3 ns Set speed, 165 °C ten-years data retention and 95% reduced power consumption compared to Ge2Sb2Te5-based device. The Ta exists in the grain boundary and partially enters Sb2Te3 grains, resulting in defects and extremely small grain size, which is responsible for the superior all-round performance. The excellent thermal property rooted in the strong Ta–Te bonds strengthens the robustness of atomic matrices. The ultra-low Reset energy is attributed to the low melting temperature, low thermal conductivity and easier melting of the cubic phase. The ultrafast crystallization originates from fine grains and defects inducing rapid atomic structure change under external electric field. These findings provide a feasible solution for implementing a universal memory.

materials science, multidisciplinary,physics, applied
Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

y y lin,hangbing lv,peng zhou,ming yin,f f liao,y f cai,t a tang,j feng,yu zhang,z f zhang,b w qiao,y f lai,b c cai,bing chen

DOI: https://doi.org/10.1109/NVSMW.2007.4290581

2007-01-01

Abstract:Si-Sb-Te (SST) system materials were investigated for non-volatile phase change memory application. By contrast to the conventional GST films, the SST films exhibit stronger thermal stability and smaller RESET current, which were resulted from the self-confine and self-heat mechanisms by the amorphous Si-rich regions surrounding the phase change crystalline in SST. It shows a good promise for non-volatile memory applications.
Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Mingyue Shao,Yang Qiao,Sannian Song,Xing Ding,Zhitang Song,Yuan Xue

DOI: https://doi.org/10.1002/aelm.202300890

IF: 6.2

2024-03-31

Advanced Electronic Materials

Abstract:The drawbacks of low thermal stability and high power consumption pose challenges to the application of phase change materials in the automotive industry and in‐memory computing. Numerous studies are conducted to enhance the performance of these materials. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. Phase change materials have issues in the automotive industry and in‐memory computing due to their limited thermal stability and high power consumption. Consequently, numerous studies are conducted to enhance the performance of these materials. Uncertainty persists regarding the effects and mechanisms of various doping on the parent material. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. The thermal stability of Sb2Te3 has been somewhat enhanced by doping these four elements, with Ta doping having the most impact. According to the ab initio molecular dynamics, this improvement results from the tetrahedral centered In and the increased coordination numbers of Ta, Ti, and Sc. Sc located at the center of the octahedron can accelerate the crystallization process. Ta, in particular, exerts the greatest influence on the migration rates of Sb and Te, resulting in the slowest grain growth rate. Simultaneously, it maximizes the delay in the transition from the cubic phase to the hexagonal phase. These features are beneficial for reducing power consumption. The elucidation of the distinct effects of doping elements sets the stage for phase change memory to adapt to various application scenarios.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Yong Wang,Tianbo Wang,Yonghui Zheng,Guangyu Liu,Tao Li,Shilong Lv,Wenxiong Song,Sannian Song,Yan Cheng,Kun Ren,Zhitang Song

DOI: https://doi.org/10.1038/s41598-018-33421-y

IF: 4.6

2018-01-01

Scientific Reports

Abstract:To date, the unpleasant trade-off between crystallization speed and thermal stability for most phase change materials is detrimental to achieve phase change memory (PCM) with both features of high-speed and good-retention. However, it is proved that Al doping in Sb2Te, served as storage media in PCM, favors both a high writing speed (6 ns) and a good retention (103 °C), as well as a low power consumption. Judging by experimental and theoretical investigations, doped Al atoms prefer to replace Sb in Sb2Te lattice, strongly bonded with 6 Te atoms, to form a homogeneous phase. While in amorphous Al doped Sb2Te (AST), Al atoms are in tetrahedral environment, firmly bonded with four Sb/Te atoms. The strong bonding in Al centered tetrahedron in amorphous AST can obstruct the collective motion of Sb atoms near the matrix boundary, leading to the improvement in thermal stability and the confinement in grain size.
Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Peng Xu,Yun Meng,Zhen Li,Xiaolin Liu,Jian Zhou,Sannian Song,Zhitang Song,Zhimei Sun,Liangcai Wu

DOI: https://doi.org/10.1021/acsanm.3c01022

IF: 6.14

2023-05-12

ACS Applied Nano Materials

Abstract:High thermal stability, fast operation speed, low thickness variation, and low resistance drift of phase-change nanomaterials are the essential characteristics in phase-change memory (PCM) applications. In this work, we put forward a graphite carbon-doped Sb2Te (C-Sb2Te) chalcogenide with semiconductor process compatibility. Our results prove that the proposed C-Sb2Te has excellent thermal stability and high operation speed. More importantly, the thickness change and resistance drift are only 0.89% and 0.0149, respectively. The C-Sb2Te-based memory device exhibits a high switching speed to the instrument test limit (5 ns) with a large resistance ratio, low operation voltage (2 V), and low power consumption (6.9 pJ). The proposed C-Sb2Te nanostructure material exceeds both conventional Ge2Sb2Te5 and transition-metal-doped Sb2Te materials in terms of its performance. Ab initio molecular dynamics simulations reveal that C–C and C–Sb bonds as well as C–C chains are formed in C-Sb2Te, and C doping constrains phase transition in a small region and refines grains of C-Sb2Te, thus resulting in the high performance. Our study suggests that C-Sb2Te is a potential candidate for high-speed, high-thermal-stability, and high-reliability PCM applications.

materials science, multidisciplinary,nanoscience & nanotechnology
Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Mengyu Zhang,Ruobing Wang,Xixi Zou,Sannian Song,Yun Bao,Liangcai Wu,Zhitang Song,Xilin Zhou

DOI: https://doi.org/10.1063/5.0206244

IF: 4

2024-05-13

Applied Physics Letters

Abstract:The Sb2Te3 phase change material shows a growth-dominated crystallization mechanism with fast phase transition but poor thermal stability of the amorphous state. This work investigated the effects of carbon doping on the thermal stability, microstructure, and electrical properties of the Sb2Te3 material. The 10-year data retention temperature of the material increased to ∼147.3 °C and the size of the grains was limited to ∼10 nm by carbon doping. The formation of the C cluster upon crystallization was found at the grain boundaries, which was accelerated as the temperature increased due to the break of the Sb–C bonds. The memory device based on the carbon-doped Sb2Te3 material exhibited a switching speed of 15 ns and an endurance of ∼105 cycles with a resistance ratio of more than two orders of magnitude. This work suggests that the carbon-doped Sb2Te3 material is a promising candidate for memory applications that require high thermal stability, fast speed, and high endurance.

physics, applied
Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Hao Wang,Sannian Song,Zhitang Song,Zhiguo Zhou,Dongning Yao,Shilong Lv

DOI: https://doi.org/10.1007/s10854-019-02605-1

2020-01-01

Abstract:Current features of phase change memory (PCM) based on Ge2Sb2Te5 (GST) as a non-volatile memory is insufficient to meet the needs of storage class memory (SCM) such as extremely high-density, ultra-fast operating speed and long life cycle. In this study, Ti0.28Sb2Te3 (TST) device was fabricated based on atomic layer deposition (ALD) method and used as a phase change material. Due to the fast crystallization and low melting temperature of TST, the set speed can be reduced to 6 ns while the reset voltage can be decreased by 20% compared with GST-based device with the same cell structure. In addition, the ALD-deposited TST alloy showed a good gap-fill capability. These results indicate that the ALD-deposited TST film is a fast and scalable phase-change material applied to SCM.
Excellent performance Ruthenium doped Sb2Te3 alloy for phase change memory

Yuan Xue,Yongkang Xu,Sannian Song,Shuai Yan,Tianjiao Xin,Zhitang Song

DOI: https://doi.org/10.1016/j.jallcom.2022.165100

IF: 6.2

2022-08-01

Journal of Alloys and Compounds

Abstract:The contradictory between thermal stability and operation speed has traditionally been the restriction to apply phase change memory (PCM) in the harsh condition. For providing a feasible solution, in this paper, Ru-modification is introduced to boost the data retention of Sb2Te3 without sacrificing the operation speed over the conventional Ge2Sb2Te5 compound. The both experimental and simulation results indicate that Ru locates at the grain boundary to inhibit the formation of large grains. Several performance of the device was enhanced, including: ultra-high 10-year data retention above 200 °C, lower Reset voltage about 1.9 V at 100 ns pulse width and a fast operation speed of 6 ns. Refined grains and smaller density change contributed to the reduced voltage and increased endurance. These findings demonstrated that PCM based Ru doped Sb2Te3 will be a potential application in high performance memories.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory

Yang Qiao,Jin Zhao,Haodong Sun,Zhitang Song,Yuan Xue,Jiao Li,Sannian Song

DOI: https://doi.org/10.3390/nano12121996

IF: 5.3

2022-06-10

Nanomaterials

Abstract:Phase change memory (PCM), due to the advantages in capacity and endurance, has the opportunity to become the next generation of general−purpose memory. However, operation speed and data retention are still bottlenecks for PCM development. The most direct way to solve this problem is to find a material with high speed and good thermal stability. In this paper, platinum doping is proposed to improve performance. The 10-year data retention temperature of the doped material is up to 104 °C; the device achieves an operation speed of 6 ns and more than 3 × 105 operation cycles. An excellent performance was derived from the reduced grain size (10 nm) and the smaller density change rate (4.76%), which are less than those of Ge2Sb2Te5 (GST) and Sb2Te3. Hence, platinum doping is an effective approach to improve the performance of PCM and provide both good thermal stability and high operation speed.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
B21-P-09The Crystal Micro-Structure Evolution of In-Situ Annealed Phase Change Material TiSbTe Film

Yongjin Chen,Qingqing Ding,Bin Zhang,Xiaodong Han,Ze Zhang

DOI: https://doi.org/10.1093/jmicro/dfv253

2015-01-01

Microscopy

Abstract:The explosive growth in the market of smart mobile phones and other portable electronic devices has attracted the interest of the semiconductor industry in non-volatile memory (NVM) technologies. Phase change memory (PCM), which utilizes the large optical and electrical property contrast between crystalline and amorphous phases of phase change materials to store information, has been considered as a promising candidate for the future NVM device [1]. Recently, Min Zhu et al [2] found that the PCM cell which based on TiSbTe(TST) alloy shows much faster Set operation speed and lower Reset power, compared with Ge2Sb2Te5 with the same size. In the present work, the surface morphology, phase and simulated images of the TST film were obtained using AFM technique. The in-situ annealed TEM morphology analyses were used in combination with the electron-diffraction Radial distribution function (RDF) to investigate the structural evolution from amorphous to the polycrystalline phases [3]. The structural evolution characteristics of the TST films were studied as a function of the annealing temperature. Furthermore, the atomic arrangement and defects of the polycrystalline state were revealed through an advanced Cs-corrected scanning transmission electron microscope (STEM) attached with an energy dispersive X-ray (EDX) spectroscope. In conclusion, our results are valuable for understanding the fast, reversible phase-change process of TST materials and also for designing new memory devices. [1] Wuttig, M. & Yamada, N., Nature Mater. 6 (2007)824–832. [2] M. Zhu et al, Nat. Commun. 5 (2014), 4086. [3] L. Zhang et al, Journal of Alloys and Compounds. 537 (2012) 71–75. B21-P-08 doi:10.1093/jmicro/dfv252
Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Hao Zhu,Jiang Yin,Yidong Xia,Zhiguo Liu

DOI: https://doi.org/10.1063/1.3483762

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Ga2Te3 films show a higher crystallization temperature, wider band gap, better data retention ability (keeping the amorphous state at 112 degrees C for ten years), and higher room-temperature resistivity of the crystalline state as compared with Ge2Sb2Te5. Ga2Te3 phase change memory cells with an effective diameter of 1 mu m also show fast switching speed. The set operation was done by a 400 ns-2.4 V pulse, and the reset operation was done by a 30 ns-5.5 V pulse. The dynamic switching ratio between the OFF and ON states is over than 10(3). (C) 2010 American Institute of Physics. [doi:10.1063/1.3483762]
Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Jing Hu,Cong Lin,Yan Cheng,Yonghui Zheng,Tao Wei,Wanfei Li,Yun Ling,Qianqian Liu,Miao Cheng,Ruirui Wang,Sannian Song,Zhitang Song,Yinghui Wei,Bo Liu

DOI: https://doi.org/10.1063/5.0146349

IF: 4

2023-05-29

Applied Physics Letters

Abstract:Balancing operation speed and thermal stability is a big challenge in phase change memory (PCM). In this work, a carbon (C) and chromium (Cr) co-doped Sb2Te strategy has been proposed for achieving high operation speed and high stability in PCM applications. In general, doping with the appropriate Cr element is beneficial to improve thermal stability, but it will sacrifice its operation speed. C-doping can enhance thermal stability and retain its fast phase transition properties due to the carbon elements tend to form agglomerates in the host that ameliorate disorder of the amorphous phase without loss of the phase transition rate. Intriguingly, the as-prepared C1.19Cr0.23Sb2Te material exhibits good data retention (T10-year @ 155.0 °C) and low-volume change rate (1.8%), as well as fast switching speed (4 ns) and good endurance (>1 × 105 cycles). This research indicates that C and Cr co-doping is an effective method to achieve excellent stability of phase-change materials without sacrificing the phase-transition rate of Sb2Te materials.

physics, applied
Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory

Yukang Yuan,Zhehao Xu,Sannian Song,Zhitang Song,Ruirui Liu,Jiwei Zhai

DOI: https://doi.org/10.1016/j.apsusc.2023.158362

IF: 6.7

2023-09-04

Applied Surface Science

Abstract:With substantial data storage requirements, enhancing the storage density of emerging non-volatile memories is a common challenge for achieving commercial applications. Phase change memory is capable of multi-level data storage in a storage cell, which can be applied in neural-inspired and all-photonic memory computing. In this study, we propose a MnTe/GeTe stacked thin film structure suitable for multi-level phase change memories and systematically study on the correlation between structure and performance. As the temperature rises, the stacked thin film sequentially crystallizes into form MnTe 2 , GeTe and Te phases, resulting in three changes in resistance. By utilizing different resistance states, the phase change memory cell based on the MnTe (15 nm)/GeTe (35 nm) stacked thin film can achieve multi-level storage with a 50 ns electrical pulse. The results show that the amorphous thermal stability of the stacked thin films is improved and that the minimal thickness variation before and after crystallization enhances its reliability. Therefore, the MnTe/GeTe stacked thin film is a phase change memory material with favorable structural properties and potential for multi-level storage applications.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
High performance of Er-doped Sb2Te material used in phase change memory

Jin Zhao,Zhenhui Yuan,Wen-Xiong Song,Zhitang Song

DOI: https://doi.org/10.1016/j.jallcom.2021.161701

IF: 6.2

2021-12-01

Journal of Alloys and Compounds

Abstract:To date, operation speed and data retention are still bottlenecks for phase-change memory. Doping impurity is a practical strategy to improve these performances of phase-change memory. Here, to avoid the precipitation of impurity, we choose erbium (Er) dopant due to the most matched structure with parental Sb2Te (EST), which is manifested by both experimental and simulation results that Er locates at lattice position. The device tests show the excellent comprehensive performances: operation speed as fast as 6 ns and 10-year data retention as high as 121 °C. This excellent amorphous thermal stability stems from the strong ErTe bonds, and these stable local patterns stabilize glassy states and result in high stability. Our study not only demonstrates that the performance of designed EST meets the requirement of phase-change memory, but also provides general doping rules to obtain better comprehensive performance.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Low Thermal Conductivity Phase Change Memory Superlattices

Jing Ning,Xilin Zhou,Yunzheng Wang,Takashi Yagi,Janne Kalikka,Siew Lang Teo,Zhitang Song,Michel Bosman,Robert E. Simpson

DOI: https://doi.org/10.48550/arXiv.2209.15227

2022-09-30

Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Materials Science
Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications

Guangyu Liu,Liangcai Wu,Sifan Zhang,Wanliang Liu,Shilong Lv,Min Zhu,Sannian Song,Zhitang Song

DOI: https://doi.org/10.1063/1.5100840

IF: 4

2019-09-23

Applied Physics Letters

Abstract:Phase change memory has high potential for next-generation nonvolatile memory technology. The effect of lower layer Sb2Te (ST) on the crystallization process of Ge2Sb2Te5 (GST) is investigated by observing the change of the microstructure. Compared to the GST-based device, this paper achieved a faster operation speed (20 ns) with stable SET and RESET resistances via the addition of ST under the GST. The crystallization of lower layer ST occurs prior to that in the upper layer GST due to lower crystallization temperature, and the crystal grains of ST can supply the heterogeneous nuclei to reduce the nucleation time and enhance the crystallization speed of GST, which accounts for the improved operation speed. In addition, the effect of atomic migration on the GST/ST interface and the device performance is also investigated.

physics, applied

Enhanced performance of phase change memory by grain size reduction

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Improving the Performance of Phase-Change Memory by Grain Refinement

Materials For Phase-Change Memory With Elevated Temperature Stability

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Excellent performance Ruthenium doped Sb2Te3 alloy for phase change memory

Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory

B21-P-09The Crystal Micro-Structure Evolution of In-Situ Annealed Phase Change Material TiSbTe Film

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory

High performance of Er-doped Sb2Te material used in phase change memory

Low Thermal Conductivity Phase Change Memory Superlattices

Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications