Abstract:Despite decades of extensive research on thermoelectric materials, Bi2Te3 alloys have dominated room-temperature applications. However, recent advancements have highlighted the potential of alternative candidates, notably Mg3Sb2-Mg3Bi2 alloys, for low- to mid-temperature ranges. This study optimizes the low-temperature composition of this alloy system through Nb addition (Mg3.2-xNbx(Sb0.3Bi0.7)1.996Te0.004), characterizing composition, microstructure, and transport properties. A high Mg3Bi2 content improves the band structure by increasing weighted mobility while enhancing the microstructure. Crucially, it suppresses detrimental grain boundary scattering effects for room-temperature applications. While grain boundary scattering suppression is typically achieved through grain growth, our study reveals that Nb addition significantly reduces grain boundary resistance without increasing grain size. This phenomenon is attributed to a grain boundary complexion transition, where Nb addition transforms the highly resistive Mg3Bi2-rich boundary complexion into a less resistive, metal-like interfacial phase. This marks the rare demonstration of chemistry noticeably affecting grain boundary interfacial electrical resistance in Mg3Sb2-Mg3Bi2. The results culminate in a remarkable advancement in zT, reaching 1.14 at 330 K. The device ZT is found to be 1.03 at 350 K, which further increases to 1.24 at 523 K and reaches a theoretical maximum device efficiency (ηmax) of 10.5% at 623 K, underscoring its competitive performance. These findings showcase the outstanding low-temperature performance of n-type Mg3Bi2-Mg3Sb2 alloys, rivaling Bi2Te3, and emphasize the critical need for continued exploration of complexion phase engineering to advance thermoelectric materials further.

The effect of Mg3As2 alloying on the thermoelectric properties of n-type Mg3(Sb, Bi)2

Effects of Bi alloying on thermoelectric properties of p‐type Mg3Sb2‐xBix solid solutions

Metallic N-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

Evolution of Nanometer-Scale Microstructure within Grains and in the Intergranular Region in Thermoelectric Mg3(Sb, Bi)2 Alloys

Enhanced thermoelectric performance of n-type Mg3Bi2-based materials by Se doping and alloying engineering

Compromise between band structure and phonon scattering in efficient n-Mg3Sb2-Bi thermoelectrics

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

High-Performance Mg<sub>3</sub>Sb<sub>2-<i>x</i></sub>Bi<i><sub>x</sub></i> Thermoelectrics: Progress and Perspective

High performance of Mg3Bi1.5Sb0.5 based materials for power generation: Revealing the counter-intuitive effect of tuning Bi content on the thermoelectric properties

Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance

Realizing Ultrahigh Near-Room-Temperature Thermoelectric Figure of Merit for N-Type Mg3(Sb,Bi)2 through Grain Boundary Complexion Engineering with Niobium

Understanding the High Thermoelectric Performance of Mg3Sb2‐Mg3Bi2 Alloys

Atomic Local Ordering and Alloying Effects on the Mg 3 (Sb 1- x Bi x ) 2 Thermoelectric Material

Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1.5Bi0.5

High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Role of Pb doping on the thermoelectric properties of Mg3Sb1.8‐yBi0.2Pby alloys

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Enhancement of thermoelectric performance in Mg 3 (Sb,Bi) 2 through engineered lattice strain and controlled carrier scattering