Morale and mental health suffer as violence grows.

C. Parish

DOI: https://doi.org/10.7748/NS.20.25.6.S4

2006-03-01

Nursing Standard

Abstract:The mental health of nurses has deteriorated in the past five years as a result of higher levels of violence, bullying and stress, an RCN survey has found.

What problem does this paper attempt to address?

Effects of Bi alloying on thermoelectric properties of p‐type Mg3Sb2‐xBix solid solutions

Bo Zhu,Xu Lu,Jiadang Li,Wenhao Xie,Lifei Wang,Qiang Zhang,Jianfeng Fan,Yun Zheng

DOI: https://doi.org/10.1002/cnma.202200400

IF: 3.82

2022-10-13

ChemNanoMat

Abstract:Bismuth is the most common alloying element for high‐performance Mg3Sb2‐based thermoelectric compounds. However, the electrical and thermal transport data is lacking for undoped Mg3(Sb, Bi)2 solid solutions. In this study, theoretical calculation results show that Bi alloying can reduce the band gap of Mg3Sb2, favoring the regulation of carrier concentration. Both Mg3Sb2 and Mg3SbBi compounds present a single band structure on the valence band maximum at G of the Brillouin zone. Incorporating the Bi element can slightly increase the density of states (DOS) on the valence band maximum, which is beneficial for the Seebeck coefficient. Mg3Sb2‐xBix (0≤x≤0.8) compounds were experimentally prepared via ball milling (BM) combined with the spark plasma sintering (SPS) technique. The carrier concentration, electrical conductivity, and power factor of the samples tend to increase with the increasing Bi content. Bismuth alloying significantly reduces the total thermal conductivity in the low‐temperature range, with the lowest value of 0.65 Wm‐1K‐1 obtained at ~400 K for the x=0.2 sample. The peak ZT value of 0.077 at 800 K and the average ZT of 0.051 in the temperature range of 450‐800 K are obtained for the x=0.2 sample, which is 93% and 219% higher than those of the unalloyed sample, respectively. This work reveals the Bi‐alloying induced transport mechanism and provides fundamental thermoelectric data regarding the undoped Mg3Sb2‐xBix (0≤x≤0.8) solid solutions.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Metallic N-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

Kazuki Imasato,Chenguang Fu,Yu Pan,Max Wood,Jimmy Jiahong Kuo,Claudia Felser,G. Jeffrey Snyder

DOI: https://doi.org/10.1002/adma.201908218

IF: 29.4

2020-01-01

Advanced Materials

Abstract:Mg3 (Sb,Bi)2 alloys have recently been discovered as a competitive alternative to the state-of-the-art n-type Bi2 (Te,Se)3 thermoelectric alloys. Previous theoretical studies predict that single crystals Mg3 (Sb,Bi)2 can exhibit higher thermoelectric performance near room temperature by eliminating grain boundary resistance. However, the intrinsic Mg defect chemistry makes it challenging to grow n-type Mg3 (Sb,Bi)2 single crystals. Here, the first thermoelectric properties of n-type Te-doped Mg3 Sb2 single crystals, synthesized by a combination of Sb-flux method and Mg-vapor annealing, is reported. The electrical conductivity and carrier mobility of single crystals exhibit a metallic behavior with a typical T-1.5 dependence, indicating that phonon scattering dominates the charge carrier transport. The absence of any evidence of ionized impurity scattering in Te-doped Mg3 Sb2 single crystals proves that the thermally activated mobility previously observed in polycrystalline materials is caused by grain boundary resistance. Eliminating this grain boundary resistance in the single crystals results in a large enhancement of the weighted mobility and figure of merit zT by more than 100% near room temperature. This work experimentally demonstrates the accurate understanding of charge-carrier scattering is crucial for developing high-performance thermoelectric materials and indicates that single-crystalline Mg3 (Sb,Bi)2 solid solutions can exhibit higher zT compared to polycrystalline samples.
Evolution of Nanometer-Scale Microstructure within Grains and in the Intergranular Region in Thermoelectric Mg3(Sb, Bi)2 Alloys

Hossein Sepehri-Amin,Kazuki Imasato,Maxwell Wood,Jimmy Jiahong Kuo,G Jeffrey Snyder

DOI: https://doi.org/10.1021/acsami.2c09905

2022-08-24

Abstract:n-type Mg3Sb2-Mg3Bi2 alloys have been investigated as one of the most promising thermoelectric materials. To achieve high performance, a detailed understanding of the microstructure is required. Although Mg3Sb2-Mg3Bi2 is usually considered to be a complete solid solution, nanosized compositional fluctuations were observed within a matrix and in the vicinity of the grain boundary. As an inhomogeneous microstructure can be beneficial or detrimental to thermoelectric performance, it is important to investigate the evolution of compositional variations for the engineering and long-term use of these materials. Using scanning transmission electron microscopy and atom probe tomography, a Bi-rich phase and compositional fluctuations are observed in sintered and annealed samples. After annealing, the broad intergranular phase was sharpened, resulting in a greater compositional change in the intergranular region. Annealing considerably reduces the fluctuations of Bi and Mg content within the grain as observed in atom probe tomography. Weighted mobility and lattice thermal conductivity were both increased as a result of the homogenized matrix phase. The combined microstructure features of intragrain and grain boundary effects resulted in an increased thermoelectric figure-of-merit zT of Mg3Sb0.6Bi1.4. These findings imply that the optimization of thermal and electrical properties can be realized through microstructure tuning.
Enhanced thermoelectric performance of n-type Mg3Bi2-based materials by Se doping and alloying engineering

Shuyao Li,Lanwei Li,Panpan Peng,Gui Yang,Yanqun Chen,Chao Wang

DOI: https://doi.org/10.1088/1361-6463/ac848e

2022-07-27

Abstract:n-type Mg3Bi2-based materials have been considered to be a promising near-room-temperature thermoelectric material and have recently received a great deal of attention. In this paper, we first investigated the thermoelectric properties of Se doped Mg3Bi2. Compared to the undoped sample, a nearly three-times enhancement in ZT was achieved at 300 K for Mg3Bi1.99Se0.01, which can be attributed to the significantly increasing power factor (PF). The PF increased from 10 to 30 µW cm−1 K−2. The improved PF mainly benefited from the high Seebeck coefficient (150–160 µV K−1 at room temperature), which resulted from band convergence induced by Se doping. To further improve the thermoelectric performance, Mg3Bi1.99Se0.01 alloying with Mg3Sb2 has been explored. The results show that band gap of alloy increased with the increasing Sb ratio. Meanwhile, the effective scattering of phonon due to Bi/Sb disorder lead to the decrease of lattice thermal conductivity. Finally, a peak ZT of 1.3 at 525 K and average ZT of 1.02 in the temperature range of 300–525 K were obtained in Mg3.2Bi1.09Sb0.9Se0.01 sample.

Engineering,Physics,Materials Science
Compromise between band structure and phonon scattering in efficient n-Mg3Sb2-Bi thermoelectrics

Xuemin Shi,Xinyue Zhang,Alexander Ganose,Junsoo Park,Cheng Sun,Zhiwei Chen,Siqi Lin,Wen Li,Anubhav Jain,Yanzhong Pei

DOI: https://doi.org/10.1016/j.mtphys.2021.100362

IF: 11.021

2021-05-01

Materials Today Physics

Abstract:n-type Mg3Sb2-based materials have become a top candidate for efficient thermoelectric applications within 300–700 K, due to its high band degeneracy, inherently high carrier mobility and low lattice thermal conductivity, as well as its advantages of less toxicity and abundance. Existing works showed that Mg3Bi2-alloying largely help ensure the exceptional performance, leaving a key issue to be uncovered on the primary mechanisms favoring or limiting the thermoelectric performance of Mg3Sb2-x Bi x alloys. Here we focus on the alloy composition dependent transport properties at various temperatures, with a large volume of experimental data. It is revealed that, with increasing x, the reduction in both inertial mass and lattice thermal conductivity is significantly beneficial, but the closure in band gap leads to a strong compensation due to the bipolar effect. Such a compromise between band structure and phonon scattering results in optimal Mg3Bi2-alloying concentrations to be about 50%–75% at 300 K, 50%–60% at 450 K and 50% at 600 K, which successfully guiding this work to realize extraordinary thermoelectric figure of merit at these temperatures.

materials science, multidisciplinary,physics, applied
Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Jianbao Yang,Zhibin Wang,Hong Zhao,Xinyu Luo,Wenyuan Han,Hao Wang,Linghao Meng,Xinqi She,Anlong Quan,Yixin Peng,Guoji Cai,Yi Liu,Yong Tang,Bo Feng

DOI: https://doi.org/10.3390/mi14101844

IF: 3.4

2023-09-28

Micromachines

Abstract:Thermoelectric materials are widely used in refrigeration chips, thermal power generation, catalysis and other fields. Mg3Bi2-based thermoelectric material is one of the most promising thermoelectric materials. Herein, the Mg3Bi2-based samples were prepared by high temperature synthesis, and the influence of Mg/Sb content on the electrical transport properties and semi-conductivity/semi-metallicity of the materials has been studied. The results indicate that the efficiency of introducing electrons from excess Mg prepared by high temperature synthesis is lower than that introduced by ball milling, due to the high vapor pressure of Mg. The doping of Sb/Te at the Bi site would make it easier for the material to change from p-type conduction to n-type conduction. With the increase in Mg content, the semi-conductivity of the material becomes weaker, the semi-metallicity becomes stronger, and the corresponding conductivity increases. With the increase in Sb content, the samples exhibit the opposite changes. The highest power factor of ~1.98 mWm−1K−2 is obtained from the Mg3.55Bi1.27Sb0.7Te0.03 sample.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
High-Performance Mg3Sb2-xBix Thermoelectrics: Progress and Perspective

Airan Li,Chenguang Fu,Xinbing Zhao,Tiejun Zhu

DOI: https://doi.org/10.34133/2020/1934848

IF: 11

2020-01-01

Research

Abstract:Since the first successful implementation of n-type doping, low-cost Mg3Sb2-xBix alloys have been rapidly developed as excellent thermoelectric materials in recent years. An average figure of merit zT above unity over the temperature range 300-700 K makes this new system become a promising alternative to the commercially used n-type Bi2Te3-xSex alloys for either refrigeration or low-grade heat power generation near room temperature. In this review, with the structure-property-application relationship as the mainline, we first discuss how the crystallographic, electronic, and phononic structures lay the foundation of the high thermoelectric performance. Then, optimization strategies, including the physical aspects of band engineering with Sb/Bi alloying and carrier scattering mechanism with grain boundary modification and the chemical aspects of Mg defects and aliovalent doping, are extensively reviewed. Mainstream directions targeting the improvement of zT near room temperature are outlined. Finally, device applications and related engineering issues are discussed. We hope this review could help to promote the understanding and future developments of low-cost Mg3Sb2-xBix alloys for practical thermoelectric applications.
High performance of Mg3Bi1.5Sb0.5 based materials for power generation: Revealing the counter-intuitive effect of tuning Bi content on the thermoelectric properties

Nuo Qu,Yuke Zhu,Jianbo Zhu,Kuai Yu,Fengkai Guo,Zihang Liu,Qian Zhang,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1016/j.jma.2023.01.003

IF: 11.813

2023-02-01

Journal of Magnesium and Alloys

Abstract:Recently, Mg3Sb2-xBix alloys have attracted intensive attention, with the aim of maximizing the electrical transport performance via donor element doping, increasing the grain size, as well as electronic band structure engineering. However, less attention has been paid to other significant factors, like how these intrinsic point defects and accompanied secondary phases influence thermoelectric properties. In this study, the microstructure and thermoelectric transport properties of Mg3.2Sb0.5Bi1.495-xTe0.005 (x = 0 ∼ 0.2) compounds were systematically investigated, where tuning the Bi content shows the counter-intuitive impact on the thermoelectric properties. It was found that the Bi-poor environment associated with Bi impurities facilitated the increment of cation vacancy formation energy and then increased the carrier concentration, leading to the enhancement of power factor. Simultaneously, the reduction of Bi-rich second phase content weakened the carrier scattering by grain boundaries whereas high carrier mobility was maintained. Moreover, the bipolar thermal conductivity decreased obviously due to the increased majority carrier concentration to suppress the intrinsic excitation. The synergistic optimization pushes the average ZT value (300–573 K) up to 0.95 in the Mg3.2Sb0.5Bi1.295Te0.005 sample. Moreover, the calculated single-leg conversion efficiency is increased up to 9.7% with the hot-side temperature of 573 K, as the record-high value in this system.

metallurgy & metallurgical engineering
Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance

Yu Pan,Mengyu Yao,Xiaochen Hong,Yifan Zhu,Fengren Fan,Kazuki Imasato,Yangkun He,Christian Hess,Jörg Fink,Jiong Yang,Bernd Büchner,Chenguang Fu,G. Jeffrey Snyder,Claudia Felser

DOI: https://doi.org/10.1039/d0ee00838a

IF: 32.5

2020-01-01

Energy & Environmental Science

Abstract:The rapid growth of the thermoelectric cooler market makes the development of novel room temperature thermoelectric materials of great importance. Ternary n-type Mg-3(Bi,Sb)(2)alloys are promising alternatives to the state-of-the-art Bi-2(Te,Se)(3)alloys but grain boundary resistance is the most important limitation. n-type Mg-3(Bi,Sb)(2)single crystals with negligible grain boundaries are expected to have particularly highzTbut have rarely been realized due to the demanding Mg-rich growth conditions required. Here, we report, for the first time, the thermoelectric properties of n-type Mg-3(Bi,Sb)(2)alloyed single crystals grown by a one-step Mg-flux method using sealed tantalum tubes. High weighted mobility similar to 140 cm(2)V(-1)s(-1)and a highzTof 0.82 at 315 K are achieved in Y-doped Mg(3)Bi(1.25)Sb(0.75)single crystals. Through both experimental angle-resolved photoemission spectroscopy and theoretical calculations, we denote the origin of the high thermoelectric performance from a point of view of band widening effect and electronegativity, as well as the necessity to form high Bi/Sb ratio ternary Mg-3(Bi,Sb)(2)alloys. The present work paves the way for further development of Mg-3(Bi,Sb)(2)for near room temperature thermoelectric applications.
Realizing Ultrahigh Near-Room-Temperature Thermoelectric Figure of Merit for N-Type Mg3(Sb,Bi)2 through Grain Boundary Complexion Engineering with Niobium

Melis Ozen,Arda Baran Burcak,Duncan Zavanelli,Minsu Heo,Mujde Yahyaoglu,Yahya Oz,Ulrich Burkhardt,Hyun-Sik Kim,G Jeffrey Snyder,Umut Aydemir

DOI: https://doi.org/10.1021/acsami.4c12046

2024-10-02

Abstract:Despite decades of extensive research on thermoelectric materials, Bi2Te3 alloys have dominated room-temperature applications. However, recent advancements have highlighted the potential of alternative candidates, notably Mg3Sb2-Mg3Bi2 alloys, for low- to mid-temperature ranges. This study optimizes the low-temperature composition of this alloy system through Nb addition (Mg3.2-xNbx(Sb0.3Bi0.7)1.996Te0.004), characterizing composition, microstructure, and transport properties. A high Mg3Bi2 content improves the band structure by increasing weighted mobility while enhancing the microstructure. Crucially, it suppresses detrimental grain boundary scattering effects for room-temperature applications. While grain boundary scattering suppression is typically achieved through grain growth, our study reveals that Nb addition significantly reduces grain boundary resistance without increasing grain size. This phenomenon is attributed to a grain boundary complexion transition, where Nb addition transforms the highly resistive Mg3Bi2-rich boundary complexion into a less resistive, metal-like interfacial phase. This marks the rare demonstration of chemistry noticeably affecting grain boundary interfacial electrical resistance in Mg3Sb2-Mg3Bi2. The results culminate in a remarkable advancement in zT, reaching 1.14 at 330 K. The device ZT is found to be 1.03 at 350 K, which further increases to 1.24 at 523 K and reaches a theoretical maximum device efficiency (ηmax) of 10.5% at 623 K, underscoring its competitive performance. These findings showcase the outstanding low-temperature performance of n-type Mg3Bi2-Mg3Sb2 alloys, rivaling Bi2Te3, and emphasize the critical need for continued exploration of complexion phase engineering to advance thermoelectric materials further.
Understanding the High Thermoelectric Performance of Mg3Sb2‐Mg3Bi2 Alloys

G. J. Snyder,J. J. Kuo,Kazuki Imasato,Shashwat Anand,Max Wood

DOI: https://doi.org/10.1002/aesr.202100208

2022-02-09

Advanced Energy and Sustainability Research

Abstract:n‐Type Mg3Sb2‐Mg3Bi2 alloys are some of the most promising thermoelectric materials in the low–mid temperature range. While discovered relatively recently, these materials have garnered intense attention, and numerous papers from the international thermoelectric community have been published in a relatively short period of time. As with all materials, detailed insights into the underlying mechanisms that contribute to these alloys’ distinguished thermoelectric properties are important for future researchers to push the performance of this material to new heights. Herein, experimental studies on the role defects, synthesis conditions, electronic band structure, and microstructure along with future prospects arecompiled to establish a guide for fully exploiting the potential of this material system. Considering the limited number of n‐type thermoelectric materials with this performance for low‐grade heat recovery and cooling technologies, further development of the Mg3Sb2‐Mg3Bi2 alloys is an important step toward commercial applications of thermoelectric materials, including cooling technologies and waste heat recovery applications.

Physics,Materials Science
Atomic Local Ordering and Alloying Effects on the Mg 3 (Sb 1- x Bi x ) 2 Thermoelectric Material

Pei Ouyang,Min-hui Yuan,Pengbing Tang,Qian Zhang,Shenghua Liu,Jing Shuai,Xiang-Guo Li

DOI: https://doi.org/10.1021/acsami.3c07801

IF: 9.5

2023-08-02

ACS Applied Materials & Interfaces

Abstract:Mg(3)(Sb(1-x)Bi(x))(2) alloy has been extensively studied in the last 5 years due to its exceptional thermoelectric (TE) performance. The absence of accurate force field for inorganic alloy compounds presents great challenges for computational studies. Here, we explore the atomic microstructure, thermal, and elastic properties of the Mg(3)(Sb(1-x)Bi(x))(2) alloy at different solution concentrations through atomic simulations with a highly accurate machine learning interatomic potential (ML-IAP)....

materials science, multidisciplinary,nanoscience & nanotechnology
Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1.5Bi0.5

Xinxin Yang,Heng Ni,Xiaotong Yu,Biao Cao,Juanjuan Xing,Qiyong Chen,Lili Xi,Jiandang Liu,Jiye Zhang,Kai Guo,Jing-Tai Zhao

DOI: https://doi.org/10.1016/j.jmat.2023.05.004

IF: 8.589

2023-06-01

Journal of Materiomics

Abstract:Large Seebeck coefficients induced by high degeneracy of conduction band minimum, and low intrinsic lattice thermal conductivity originated from large lattice vibrational anharmonicity render Mg3Sb2 as a promising n-type thermoelectric material. Herein, we demonstrated unique concentration-dependent occupation behaviors of Cu in Mg3.4Sb1.5Bi0.49Te0.01 matrix, evidenced by structural characterization and transport property measurements. It is found that Cu atoms prefer to enter the interstitial lattice sites in Mg3Sb2 host with low doping level (Mg3.4Sb1.5Bi0.49Te0.01 + x % Cu, x < 0.3%), acting as donors for providing additional electrons without deteriorating the carrier mobility. When x is larger than 0.3%, the excessive Cu atoms are inclined to substitute Mg atoms, yielding acceptors to decrease the electron concentration. As a result, the electrical conductivity of the Mg3.4Sb1.5Bi0.49Te0.01 + 0.3% Cu sample reaches 2.3 × 104 S/m at 300 K, increasing by 300% compared with that of the pristine sample. The figure of merit zT values in the whole measured temperature range are significantly improved by the synergetic improvement of power factor and reduction of thermal conductivity. An average zT ∼1.07 from 323 K to 773 K has been achieved for the Mg3.4Sb1.5Bi0.49Te0.01 + 0.3% Cu sample, which is about 30% higher than that of the Mg3.4Sb1.5Bi0.49Te0.01 sample.

materials science, multidisciplinary,chemistry, physical,physics, applied
High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Qi-Qi Wang,Ke-Feng Liu,Yuan-Yuan Su,Xiao-Cun Liu,Qian Liu,Shun Zhou,Jian Liu,Sheng-Qing Xia

DOI: https://doi.org/10.1016/j.actamat.2023.119028

IF: 9.4

2023-08-01

Acta Materialia

Abstract:Layered high-performing Mg3Bi2-based materials which made from nontoxic and earth-abundant elements have been considered as a promising thermoelectric candidate for low-grade energy recycling. High-quality compositionally controllable Mg3Bi2-based single crystals are grown using modified Bridgman method. The anisotropy of in- and out of plane in high-quality Mg3Bi1.49Sb0.5Te0.01 bulk single crystals are clearly characterized, record high ZT of ∼0.9 at 300 K as well as excellent ZT avg of 1.26 in the temperature range of 300-523 K are achieved along ab-plane, both of which rank as top values among the reported literature. Owing to the higher mobility (266 vs 189 cm2·V−1·s−1), the electrical conductivity along ab-plane is about 25% larger than that along c-axis at room temperature. Besides, Seebeck coefficient and lattice thermal conductivity are insensitive to the direction, resulting in anisotropy of thermoelectric performance but smaller than van der Waals layered materials. Compared with parent Mg3Bi1.5Sb0.5, both carrier concentration and mobility are significant improved with quantitative Te doping, leading to greatly enhanced power factor. With in-depth investigations of anisotropy, the results presented here will advance the fundamental understanding of Mg3Bi2-based system and suggest new ideas on design of the state-of-art thermoelectric materials with high performance.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

Kangkang Yang,Xiangyu Li,Congli Sun,Wei Song,Wenyu Zhao,Qingjie Zhang

DOI: https://doi.org/10.1002/adfm.202315886

IF: 19

2024-04-03

Advanced Functional Materials

Abstract:Herein, by manipulating the threshold solubility and defect formation energy of Mn, multivalent Mn is selectively introduced that synergistically promotes the carrier conduction according to different Mg chemical potentials. An ultra‐stable room temperature thermoelectric performance is obtained. This work reveals the critical effect of multivalent and multifunctional transition metal incorporation in Mg3(Sb, Bi)2‐based alloys toward high room‐temperature thermoelectric performance. n‐type Mg3(Sb, Bi)2 has excellent room temperature thermoelectric performance, which is, however, severely restricted by the negatively charged Mg vacancies that significantly deteriorate the carrier mobility. Herein, by manipulating the threshold solubility and defect formation energy of Mn, multivalent Mn is selectively introduced that synergistically promotes the carrier conduction according to different Mg chemical potentials; In Mg‐rich areas, interstitial Mn dominates which effectively reduces the migration and accumulation of Mg vacancies, while in Mg poor areas, interstitial Mn switches to substitutional sites that directly compensate for the negative charge. All the Mn centers possess Jahn–Teller inactive positions, leading to an ultra‐stable room temperature thermoelectric performance with a leading ZT up to 0.97. This work reveals the critical effect of multivalent and multifunctional transition metal incorporation in Mg3(Sb, Bi)2‐based alloys toward high room‐temperature thermoelectric performance.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Juan Li,Kejia Liu,Xiaojing Ma,Zhongran Yang,Liqun Yi,Jun Mao,Qian Zhang

DOI: https://doi.org/10.1021/acs.inorgchem.4c00522

IF: 4.6

2024-05-02

Inorganic Chemistry

Abstract:A P-type Mg(3)Sb(2)-based Zintl phase compound has been considered a promising candidate for thermoelectric applications. Alloying, which introduces a high concentration of point defects, is particularly effective in scattering phonons and reducing lattice thermal conductivity. Herein, alloying in p-type Mg(2.995)Na(0.005)Sb(2) via the introduction of elements like Yb, Eu, Ca, and Ba was realized, and the room-temperature lattice thermal conductivity has been effectively reduced to ∼1.1 W m^(-1)...

chemistry, inorganic & nuclear
Role of Pb doping on the thermoelectric properties of Mg3Sb1.8‐yBi0.2Pby alloys

Bo Zhu,Xu Lu,Lianglu Hu,Qiang Zhang,Lifei Wang,Yun Zheng,Jianfeng Fan

DOI: https://doi.org/10.1002/cnma.202200419

IF: 3.82

2022-10-19

ChemNanoMat

Abstract:In this work, we focused on the matrix material with a composition of Mg3Sb1.8Bi0.2. The effect of Pb doping on the thermoelectric properties of Mg3Sb1.8‐yBi0.2Pby (y=0, 0.005, 0.01, 0.02) compounds was investigated. Mechanical alloying followed by spark plasma sintering was employed to synthesize the corresponding bulk materials. The x‐ray diffraction results indicate that the doping limit of Pb in Mg3Sb1.8Bi0.2 is 0.01~0.02. Pb doping significantly increases the carrier concentration up to >1019 cm‐3, while decreasing the Seebeck coefficient. Moreover, the thermal conductivity of the matrix material is reduced upon Pb doping at 400‐700 K. As a result, the thermoelectric figure of merit is improved in the low‐temperature range, and a ZT value of 0.039 is obtained for the y=0.005 sample at 500 K, which is 77% higher than that of the undoped sample.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Jing-Wei Li,Weishu Liu,Wei Xu,Hua-Lu Zhuang,Zhijia Han,Feng Jiang,Peng Zhang,Haihua Hu,Hanbin Gao,Yilin Jiang,Bowen Cai,Jun Pei,Bin Su,Qian Li,Kei Hayashi,Hezhang Li,Yuzuru Miyazaki,Xingzhong Cao,Qiang Zheng,Jing-Feng Li

DOI: https://doi.org/10.1002/adma.202209119

Abstract:Mg3 (Sb,Bi)2 is a potential nearly-room temperature thermoelectric compound composed of earth-abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (VMg ) in Mg3 (Sb,Bi)2 . This study proposes an approach to mitigating the negative scattering effect of VMg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and Cs -corrected scanning transmission electron microscopy analyses indicated that the VMg tends to coalesce due to the introduced Bi vacancies (VBi ). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic VMg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at ∆T = 473 K are achieved in the optimized composition of Mg3 (Sb,Bi)2 by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg3 (Sb,Bi)2 as an emerging thermoelectric material.
Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Xin Li,Bin Yang,Hui Xie,Hong Zhong,Songke Feng,Yalong Zhang,Ying Ma,Juntao Zhang,Hengjie Su

DOI: https://doi.org/10.1016/j.materresbull.2022.112106

IF: 5.6

2023-03-01

Materials Research Bulletin

Abstract:The defect formation energy and the electronic structures of Ag-doped Mg3- x - y Ag y Sb2 alloys were accurately determined by carrying out first-principles calculations. The relevant crystals were prepared by using the directional solidification method and their thermoelectric properties were thoroughly investigated. From the calculated outcomes, it was demonstrated that Mg1 sites tend to form a vacancy, while Mg2 sites are preferentially substituted by the Ag atoms. The top values of the electrical conductivity and the power factor of the Mg2.95Ag0.025Sb2 alloy were improved by 25% and 10%, respectively. The increased point defect content is beneficial for enhancing the phonon scattering. In addition, the maximum ZT value of the Mg2.95Ag0.025Sb2 alloy was 1.1 – 1.45 times higher than that of the previously reported Ag-doped crystals. In the medium temperature range, the ZT values remained above 0.5, which is also considered a significant improvement compared with other types of p-type Mg3Sb2 alloys reported in the literature.

materials science, multidisciplinary
Enhancement of thermoelectric performance in Mg 3 (Sb,Bi) 2 through engineered lattice strain and controlled carrier scattering

Shaoping Chen,Jindou Wei,Zepeng Kang,Xin Miao,Decheng An,Wenhao Fan,Chaochao Dun

DOI: https://doi.org/10.1016/j.cej.2024.151404

IF: 15.1

2024-04-29

Chemical Engineering Journal

Abstract:Mg 3 (Sb,Bi) 2 emerges as a promising thermoelectric (TE) material due to its rich elemental composition and high TE performance, offering potential for industrial applications. In this study, we found out that the elevated sintering temperatures can introduce dislocations, vacancies, and nanoscale precipitates in the lattice, inducing desirable lattice strain. Higher lattice strain broadens the phonon dispersion, effectively reducing lattice thermal conductivity. Simultaneously, high-temperature sintering increases grain size, significantly mitigating grain boundary carrier scattering and enhancing carrier mobility. As a result, we observe a 31.4 % increase in lattice strain, a 30 % reduction in lattice thermal conductivity, a 200 % rise in room temperature mobility, ultimately achieving an outstanding figure of merit ( zT ) of 1.7 at 750 K for Mg 3.22 Ho 0.03 Sb 1.5 Bi 0.5 . The synergistic effect of engineering lattice strain to minimize lattice thermal conductivity and controlling carrier scattering mechanisms to enhance mobility significantly provides a novel strategy to improve TE performance of Mg 3 (Sb,Bi) 2 -based materials.

engineering, chemical, environmental

Morale and mental health suffer as violence grows.

Effects of Bi alloying on thermoelectric properties of p‐type Mg3Sb2‐xBix solid solutions

Metallic N-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

Evolution of Nanometer-Scale Microstructure within Grains and in the Intergranular Region in Thermoelectric Mg3(Sb, Bi)2 Alloys

Enhanced thermoelectric performance of n-type Mg3Bi2-based materials by Se doping and alloying engineering

Compromise between band structure and phonon scattering in efficient n-Mg3Sb2-Bi thermoelectrics

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

High-Performance Mg<sub>3</sub>Sb<sub>2-<i>x</i></sub>Bi<i><sub>x</sub></i> Thermoelectrics: Progress and Perspective

High performance of Mg3Bi1.5Sb0.5 based materials for power generation: Revealing the counter-intuitive effect of tuning Bi content on the thermoelectric properties

Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance

Realizing Ultrahigh Near-Room-Temperature Thermoelectric Figure of Merit for N-Type Mg3(Sb,Bi)2 through Grain Boundary Complexion Engineering with Niobium

Understanding the High Thermoelectric Performance of Mg3Sb2‐Mg3Bi2 Alloys

Atomic Local Ordering and Alloying Effects on the Mg 3 (Sb 1- x Bi x ) 2 Thermoelectric Material

Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1.5Bi0.5

High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Role of Pb doping on the thermoelectric properties of Mg3Sb1.8‐yBi0.2Pby alloys

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Enhancement of thermoelectric performance in Mg 3 (Sb,Bi) 2 through engineered lattice strain and controlled carrier scattering