Abstract:In recent years, bismuth-rich Mg3(Sb1-xBix)2 (x = 0.5-0.8) compositions have generated significant interest due to their excellent thermoelectric (TE) performance near room temperature, making them potential applicants for recovery of low-grade waste heat. The superior performance in these materials is due to its complex electronic band structure (EBS) with presence of multiple near degenerate bands close to the conduction band edge. The position and curvature of these bands strongly depend on the alloy composition, doping amount as well as temperature. Thus, identifying optimal material compositions to get the best TE performance depends on an understanding of the temperature dynamics of EBS and forms the objective of this work. Mg3Sb0.6Bi1.4 (x = 0.7) is chosen for this study due to its reported high near room temperature performance, and compositions with varying doping concentrations (Te used as dopant) have been synthesized. EBS parameters like effective mass and deformation potential of bands, interband separation and band gap values have been estimated using a recently developed refinement approach. Refinement results indicate that the interband separation between conduction bands to be a function of both temperature and doping concentration. Further, thermal conductivity (κ) was estimated for all of the compositions. Utilizing the EBS and κ information, predictive 3D maps indicating the variation in zT (TE figure of merit) with doping concentration and temperature have been generated. The 3D maps reveal an interesting surface topography with a broad peak zT region. This observation explains why these materials have high TE performance and are less sensitive to doping inhomogeneities. Our results provide detailed EBS information and fundamental insights on the TE properties of Mg3Sb0.6Bi1.4. Further, the proposed technique can be utilized to probe other Mg3(Sb1-xBix)2 compositions and TE materials.

Atomic Local Ordering and Alloying Effects on the Mg 3 (Sb 1- x Bi x ) 2 Thermoelectric Material

Atomic Local Ordering and Alloying Effects on the Mg3(Sb1-x Bi X )2 Thermoelectric Material

Evolution of Nanometer-Scale Microstructure within Grains and in the Intergranular Region in Thermoelectric Mg3(Sb, Bi)2 Alloys

Revelation of Inherently High Mobility Enables Mg3Sb2 As a Sustainable Alternative to N‐bi2te3 Thermoelectrics

Significant Role of Nanoscale Bi-rich Phase in Optimizing Thermoelectric Performance of Mg 3 Sb 2

The effect of Mg3As2 alloying on the thermoelectric properties of n-type Mg3(Sb, Bi)2

Enhancement of Thermoelectric Performance in Mg3(Sb,Bi)2 Through Engineered Lattice Strain and Controlled Carrier Scattering

Advances in Thermoelectric Mg3Sb2 and Its Derivatives

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Ultrafast Combustion Synthesis and High Thermoelectric Performance of Mg3Sb2-xBix-Based Compounds

Unphysical Grain Size Dependence of Lattice Thermal Conductivity in Mg3(Sb, 3 (sb, Bi)2: 2 : an Atomistic View of Concentration Dependent Segregation Effects

Simultaneously Improved Thermoelectric and Mechanical Properties Driven by MgB2 Doping in Bi0.4Sb1.6Te3 Based Alloys

Intrinsic Mechanical Behavior of MgAgSb Thermoelectric Material: an Ab Initio Study

Compromise Between Band Structure and Phonon Scattering in Efficient N-Mg3sb2-xbix Thermoelectrics

Unphysical grain size dependence of lattice thermal conductivity in Mg3(Sb, Bi)2: An atomistic view of concentration dependent segregation effects

Effects of Bi alloying on thermoelectric properties of p‐type Mg3Sb2‐xBix solid solutions

Developing a Multiband Electronic Band Structure Model and Predictive Maps for Bismuth-Rich Mg 3 (Sb 1– x Bi x ) 2 Thermoelectric Materials

Effects of Bi Alloying on the Thermoelectric Properties of P‐type Mg3Sb2‐xBix Solid Solutions

Mg-Defect Compensation to Realize High Performance at Room Temperature in Mg3Bi2-Based Thermoelectric Single Crystals

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Outstanding Room-Temperature Thermoelectric Performance of N-Type Mg3Bi2-Based Compounds Through Synergistically Combined Band Engineering Approaches