Abstract:Abstract Applications at the High Luminosity LHC (HL-LHC) have required the development of a new generation of 3D pixel sensors with increased pixel granularity, extreme radiation hardness and low material budget. To this purpose, new 3D pixels have small pitch (e.g., 50×50 or 25×100 μm 2 ) and reduced active thickness (∼100 μm). Owing to the small inter-electrode spacing (∼28 μm in the most aggressive designs). These 3D pixels are expected to be radiation hard even after irradiation at the hadron fluences. Indeed, they are of interest for the innermost tracking layers of ATLAS and CMS (∼2×10 16 n eq cm −2 ), and beyond. In order to estimate the charge collection efficiency (CCE) after irradiation, TCAD simulations can be conveniently used, providing useful information for the optimization of sensor design and fabrication technology. Within the AIDA-2020 project, with reference to the new single-sided 3D technology from FBK (Trento, Italy), we have simulated the CCE of pixel sensors with different inter-electrode spacing irradiated at different fluences. For these simulations, a 2D domain was used, consisting of a horizontal slice taken at half the depth of a 3D sensor. Simulations consider the hit of a minimum ionizing particle, described by the Heavy Ion model at different points within the active area. In addition, bulk radiation damage is accounted by using advanced deep-level trap models. This paper reports a comprehensive description of the simulation results based on a radiation model validated by comparison to experimental results from n-in-p strip detectors at 248 K and 900 V bias.

Comparative study of the impact of interpad nominal length on the onset of the charge multiplication in standard segmented LGAD with 2 p-stops and bias ring as isolated structures

Exploring the Interpad Gap Region in Ultra-Fast Silicon Detectors: Insights into Isolation Structure and Electric Field Effects on Charge Multiplication

Design optimization of the UFSD inter-pad region

Laboratory and beam-test performance study of a 55$~μ$m pitch iLGAD sensor bonded to a Timepix3 readout chip

Long-distance signal propagation in AC-LGAD

Correlation between charge and current gain in LGADs treated with IR lasers

Characterization of timing and spacial resolution of novel TI-LGAD structures before and after irradiation

Characterization of LAPPD timing at CERN PS testbeam

Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique

A Comparative Study of Straight-Strip and Zigzag-Interleaved Anode Patterns for MPGD Readouts

Overview of CNM LGAD results: Boron Si-on-Si and epitaxial wafers

Timing performance of a multi-pad PICOSEC-Micromegas detector prototype

TCAD simulation of AC-LGADs

Design and performance of the front-end electronics of the charged particle detectors of PADME experiment

A simulation study of electric field engineering with multi-level pinned photodiodes for fast and complete charge transfer

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Performance of Pad Front-End Board for Small-Strip Thin Gap Chamber with Cosmic Ray Muons

Modeling, Simulation Methods and Characterization of Photon Detection Probability in CMOS-SPAD

Characterizing Novel Indium Phosphide Pad Detectors with Focused X-ray Beams and Laboratory Tests

Charge collection properties of irradiated depleted CMOS pixel test structures

Charge losses in segmented silicon sensors at the Si-SiO2 interface