Abstract:Abstract Applications at the High Luminosity LHC (HL-LHC) have required the development of a new generation of 3D pixel sensors with increased pixel granularity, extreme radiation hardness and low material budget. To this purpose, new 3D pixels have small pitch (e.g., 50×50 or 25×100 μm 2 ) and reduced active thickness (∼100 μm). Owing to the small inter-electrode spacing (∼28 μm in the most aggressive designs). These 3D pixels are expected to be radiation hard even after irradiation at the hadron fluences. Indeed, they are of interest for the innermost tracking layers of ATLAS and CMS (∼2×10 16 n eq cm −2 ), and beyond. In order to estimate the charge collection efficiency (CCE) after irradiation, TCAD simulations can be conveniently used, providing useful information for the optimization of sensor design and fabrication technology. Within the AIDA-2020 project, with reference to the new single-sided 3D technology from FBK (Trento, Italy), we have simulated the CCE of pixel sensors with different inter-electrode spacing irradiated at different fluences. For these simulations, a 2D domain was used, consisting of a horizontal slice taken at half the depth of a 3D sensor. Simulations consider the hit of a minimum ionizing particle, described by the Heavy Ion model at different points within the active area. In addition, bulk radiation damage is accounted by using advanced deep-level trap models. This paper reports a comprehensive description of the simulation results based on a radiation model validated by comparison to experimental results from n-in-p strip detectors at 248 K and 900 V bias.

Characterization of timing and spacial resolution of novel TI-LGAD structures before and after irradiation

Laboratory and beam-test performance study of a 55$~μ$m pitch iLGAD sensor bonded to a Timepix3 readout chip

Digital Pixel Test Structures implemented in a 65 nm CMOS process

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

Exploring the Interpad Gap Region in Ultra-Fast Silicon Detectors: Insights into Isolation Structure and Electric Field Effects on Charge Multiplication

High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors

Comprehensive technology study of radiation hard LGADs

Characterization of the response of IHEP-IME LGAD with shallow carbon to Gamma Irradiation

TCAD simulation of AC-LGADs

First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process

26.5 ps Time Resolution Using 50 μm Low Gain Avalanche Detectors Fabricated by Micron Semiconductor Ltd

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Characterization of iLGADs using soft X-rays

Measurements and TCAD simulations of innovative RSD and DC-RSD LGAD devices for future 4D tracking

Considerations on time resolution of neutron irradiated single pixel 3D structures at fuences up to $10^{17}$ n$_{eq}$/cm$^{2}$ using 120 GeV SPS pion beams

Beyond the CMOS sensors: the DoTPiX pixel concept and technology for the International Linear Collider A

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and 90 Sr

A monolithic ASIC demonstrator for the Thin Time-of-Flight PET scanner