Abstract:In preparation for the forthcoming High-Luminosity phase of the Large Hadron Collider, the ATLAS experiment is working on major upgrades to its detector systems to effectively accommodate the increase in radiation levels and track density. The foremost among these upgrades entails the replacement of the current inner tracking detector with an advanced all-silicon Inner Tracker (ITk). In the outer region of the ITk apparatus is the Strip Detector. Central to the new strip tracking system are the ITk Strip modules, comprising silicon sensors and hybrid Printed Circuit Boards housing the integral read-out Application-Specific Integrated Circuits (ASICs) as well as power distribution services. Thorough characterisation of the electrical characteristics of the silicon strip modules at various stages of the assembly procedure holds paramount significance in evaluating module performance. This rigorous evaluation ensures timely identification of any anomalies, thereby enabling proactive remedial measures. Notably, during the course of these electrical assessments, certain modules manifested breakdown phenomena occurring below the prescribed threshold of 500 V, mandated by the ITk Quality Control protocols. Based on these observations, controlled exposure to low levels of radiation was suspected to elevate the breakdown voltage in susceptible sensors. This contribution presents results from two irradiation campaigns to investigate potentially beneficial effects of irradiation. One study investigates the effects of gamma irradiation on modules showing an early breakdown after gluing. For this study, modules were exposed to an ionising dose of 11 krad (corresponding to the dose accumulated after several days of operation in the HL-LHC) utilising a 60 Co source. The second campaign focuses on silicon sensor test structures with low breakdown voltage due to intentionally caused mechanical defects and their development after exposure to reactor neutrons. In both cases, preliminary findings suggest a discernible improvement in the breakdown voltage.

Charge losses in segmented silicon sensors at the Si-SiO2 interface

Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Modeling of Surface Damage at the Si/SiO$_2$-interface of Irradiated MOS-capacitors

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

Characterization of passive CMOS strip sensors

Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Charge Collection Studies in Irradiated Hv-Cmos Particle Detectors

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

Charge collection properties of irradiated depleted CMOS pixel test structures

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Curing early breakdown in silicon strip sensors with radiation

Modeling Charge Transport in Photon-Counting Detectors