Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

Yanru Ren,Min Zhu,Dongyu Xu,Minghui Liu,Xuehui Dai,Shengao Wang,Longxian Li

DOI: https://doi.org/10.1155/2024/3616902

IF: 0.849

2024-03-31

Science and Technology of Nuclear Installations

Abstract:With the rapid advancement of information technology, microelectronic devices have found widespread applications in critical sectors such as nuclear power plants, aerospace equipment, and satellites. However, these devices are frequently exposed to diverse radiation environments, presenting significant challenges in mitigating radiation-induced damage. Hence, this review aims to delve into the intricate damage mechanisms of microelectronic devices within various radiation environments and highlight the latest advancements in radiation-hardening techniques. The ultimate goal is to bolster the reliability and stability of these devices under extreme conditions. The review initiates by outlining the spectrum of radiation environments that microelectronic devices may confront, encompassing space radiation, nuclear explosion radiation, laboratory radiation, and process radiation. It also delineates the potential damage types that these environments can inflict upon microelectronic devices. Furthermore, the review elaborates on the underlying mechanisms through which different radiation environments impact the performance of microelectronic devices, which includes a detailed analysis of the characteristics and fundamental mechanisms of damage when microelectronic devices are subjected to total ionizing dose effects and single-event effects. In addition, the review delves into the promising application prospects of several key radiation-hardening techniques for enhancing the radiation tolerance of microelectronic devices.

nuclear science & technology

What problem does this paper attempt to address?

The paper aims to explore the damage mechanisms of microelectronic devices in different radiation environments and highlight the latest advancements in radiation-hardened technologies. Its main objective is to improve the reliability and stability of these devices under extreme conditions. Specifically, the paper first provides an overview of the types of radiation environments that microelectronic devices may face, including space radiation, nuclear explosion radiation, laboratory radiation, and process radiation. Then, the paper analyzes in detail the potential damage types and impact mechanisms of these environments on microelectronic devices, particularly the Total Ionizing Dose (TID) effect and Single Event Effect (SEE). Additionally, the paper discusses the application prospects of several key radiation-hardened technologies to enhance the radiation tolerance of microelectronic devices.

By thoroughly studying the impact of radiation effects on the performance of microelectronic devices, the authors hope to provide guidance for future device design to ensure their stable operation in extreme environments. This is not only crucial for applications in high-radiation environments such as aerospace and nuclear energy but also significant for applications in ground high-radiation environments like nuclear power plants and medical equipment.