Abstract:III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its surface against chemical corrosion which leads to decomposition, we deposit a GaN protection and passivation layer. The n-doped GaInP(100) epitaxial layers were grown by metalorganic chemical vapor deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We studied the band alignment of these multi-junction heterostructures by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of separate measurements in which we either modified the GaInP(100) surface termination or the film thickness of the grown GaN on GaInP(100) buffer layers. On n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2) reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated resulting in a reduction of BB to 0.12 eV and a valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of 1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be rather small. Therefore, we evaluate the application of the GaN passivation layer as a promising technological step not only to reduce surface states but also to increase the stability of the surfaces of photoelectrochemical devices.

Performance of Hydride Vapor Phase Epitaxy‐Grown GaInP Photovoltaics with Double‐Sided Al‐Containing Passivation Layers Under Air Mass 1.5 Global Solar Irradiation and Low‐Intensity Indoor Light Irradiation

High Open‐Circuit Voltages in Tin‐Rich Low‐Bandgap Perovskite‐Based Planar Heterojunction Photovoltaics

InGaAsP/InP Photovoltaic Converters for Narrowband Radiation

Wide-Gap Perovskite Via Synergetic Surface Passivation and Its Application Toward Efficient Stacked Tandem Photovoltaics.

Efficient and scalable GaInAs thermophotovoltaic devices

Heteroepitaxial Growth of GaP Photocathode by Hydride Vapor Phase Epitaxy for Water Splitting and CO2 Reduction

Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

High-Temperature Ionic Epitaxy of Halide Perovskite Thin Film and the Hidden Carrier Dynamics.

Enhancement of the Conversion Efficiency of GaN-based Photovoltaic Devices with AlGaN/InGaN Absorption Layers

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

Fabrication of 0.6 eV Bandgap In0.69Ga0.31As Thermophotovoltaic Cells and Its System Demonstration

Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs

High-pressure MOCVD Growth of InGaN Thick Films Toward the Photovoltaic Applications.

Effects of thermal treatment on radiative properties of HVPE grown InP layers

Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy

High-Quality Indium Phosphide Films and Nano-Network Grown Using Low-Cost Metal-Catalyzed Vapor-Liquid-Solid Method for Photovoltaic Applications

Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells

Performance comparison of III–V//Si and III–V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding

Storage and transfer of optical excitation energy in GaInP epilayer: Photoluminescence signatures

Enhanced Efficiency and Stability of Wide‐Bandgap Perovskites via Br‐Rich Bulk and Surface 2D Passivation for Indoor Photovoltaics

Tunable Graphene/Indium Phosphide Heterostructure Solar Cells