High Open‐Circuit Voltages in Tin‐Rich Low‐Bandgap Perovskite‐Based Planar Heterojunction Photovoltaics

Baodan Zhao,Mojtaba Abdi-Jalebi,Maxim Tabachnyk,Hugh Glass,Varun S. Kamboj,Wanyi Nie,Andrew J. Pearson,Yuttapoom Puttisong,Karl C. Godel,Harvey E. Beere,David A. Ritchie,Aditya D. Mohite,Sian E. Dutton,Richard H. Friend,Aditya Sadhanala
DOI: https://doi.org/10.1002/adma.201604744
IF: 29.4
2017-01-01
Advanced Materials
Abstract:Low-bandgap CH3 NH3 (Pbx Sn1-x )I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V-1 s-1 ) intrinsic carrier mobilities.
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