A Bifunctional Carbazide Additive For Durable CSSNI3 Perovskite Solar Cells

Chenghao Duan,Feilin Zou,Qiaoyun Wen,Minchao Qin,Jiong Li,Chang Chen,Xinhui Lu,Liming Ding,Keyou Yan
DOI: https://doi.org/10.1002/adma.202300503
IF: 29.4
2023-04-01
Advanced Materials
Abstract:Inorganic CsSnI3 with low toxicity and a narrow band gap is a promising photovoltaic material. However, the performance of CsSnI3 perovskite solar cells (PSCs) is much lower than that of Pb‐based and hybrid Sn‐based (e. g. CsPbX3 and FASnX3) PSCs, which might be attributed to its poor film‐forming property and deep traps induced by Sn4+. Here, a bifunctional additive carbazide (CBZ) was adopted to deposit a pinhole‐free film and remove the deep traps via two‐step annealing. The lone electrons of the ‐NH2 and ‐CO units in CBZ can coordinate with Sn2+ to form a dense film with large grains during the phase transition at 80°C. The decomposition of CBZ can reduce Sn4+ to Sn2+ during annealing at 150°C to remove deep traps. Compared with the control device (4.12%), the maximum efficiency of the CsSnI3:CBZ PSC reached 11.21%, which is the highest efficiency of CsSnI3 PSC reported to date. A certified efficiency of 10.90% was obtained in an independent photovoltaic testing laboratory. In addition, the unsealed CsSnI3:CBZ devices maintained initial efficiencies of approximately 100%, 90%, and 80% under an inert atmosphere (60 days), standard maximum power point tracking (650 h at 65°C), and ambient air (100 h), respectively. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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