Localized Electron Density Engineering for Stabilized B-γ CsSnI 3 -Based Perovskite Solar Cells with Efficiencies >10%

Tao Ye,Xizu Wang,Kai Wang,Shaoyang Ma,Dong Yang,Yuchen Hou,Jungjin Yoon,Ke Wang,Shashank Priya
DOI: https://doi.org/10.1021/acsenergylett.1c00342
IF: 22
2021-03-25
ACS Energy Letters
Abstract:Black orthorhombic (B-γ) CsSnI<sub>3</sub> with low toxicity and excellent optoelectronic properties is a promising candidate for perovskite solar cell (PSC). However, the performance of the B-γ CsSnI<sub>3</sub>-based PSCs is much lower than their lead-based or organotin-based counterparts due to the heavy self-doping of Sn<sup>2+</sup> to form Sn<sup>4+</sup> under ambient-air conditions. Here, this undesirable oxidation in CsSnI<sub>3</sub> is restricted by engineering the localized electron density with phthalimide (PTM) additive. The lone electron pairs of NH and two CO units of PTM are designed to form trigeminal coordination bonding with Sn<sup>2+</sup>, resulting in reduced defect density and relatively grain-ordered perovskite film. The champion efficiencies of 10.1% and 9.6% are obtained for the modified rigid and flexible B-γ CsSnI<sub>3</sub>-based PSCs, respectively. These encapsulated devices maintain 94.3%, 83.4%, and 81.3% of their initial efficiencies under inert (60 days), ambient (45 days), and 1 Sun continuous illumination at ∼70 °C (2000 min) conditions, respectively.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsenergylett.1c00342?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsenergylett.1c00342</a>.Experimental section, SEM, UV–vis spectrum, Tauc plot of optical absorption, PL/TRPL, XRD, TEM, HAADF-STEM, EDS, NMR, FTIR, XPS, device performance, SCLC, EIS, images, water contact angle, simulated crystal details, DFT simulation results (<a class="ext-link" href="/doi/suppl/10.1021/acsenergylett.1c00342/suppl_file/nz1c00342_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology,energy & fuels,electrochemistry
What problem does this paper attempt to address?
This paper aims to solve the problem of the low performance of black - rhombohedral (B - γ) CsSnI₃ - based perovskite solar cells (PSCs). Specifically, since Sn²⁺ is prone to self - doping to form Sn⁴⁺ in ambient air, the performance of B - γ - CsSnI₃ is far lower than that of lead - based or organotin - based counterparts. To solve this problem, the author engineered the local electron density by introducing phthalimide (PTM) additives, thereby limiting the unfavorable oxidation of Sn²⁺ to Sn⁴⁺, reducing the defect density, and increasing the orderliness of the thin film. ### Key points: 1. **Problem background**: - B - γ - CsSnI₃ is a promising candidate material for perovskite solar cells with low toxicity and excellent photoelectric properties. - However, due to the self - doping of Sn²⁺ to form Sn⁴⁺ in ambient air, the performance of B - γ - CsSnI₃ is low. 2. **Solution**: - Introduce PTM additives, and use the lone - pair electrons of its NH and two CO units to form tricoordinate bonding with Sn²⁺, reducing the defect density and increasing the orderliness of the thin film. - Through systematically combining theory and experiment, it was verified that the NH and CO functional groups in PTM form coordinated bonding with Sn²⁺ in CsSnI₃, protecting Sn²⁺ from being oxidized to Sn⁴⁺. 3. **Effect**: - The rigid and flexible B - γ - CsSnI₃ - based PSCs modified by PTM achieved the highest efficiencies of 10.1% and 9.6% respectively. - The encapsulated devices maintained 94.3%, 83.4% and 81.3% of their initial efficiencies within 60 days, 45 days and 2000 minutes respectively under inert gas, ambient air and 1 - sun continuous illumination conditions. ### Formulas and data: - **Band gap**: The band gap of B - γ - CsSnI₃ at room temperature is approximately 1.31 eV. - **Photoluminescence lifetime**: The average PL lifetime of the unmodified CsSnI₃ sample is 3.39 ns, which increases to 11.97 ns after adding PTM. - **Trap density**: The hole - trap density of the unmodified CsSnI₃ thin film is estimated to be 3.88 × 10¹⁵ cm⁻³, and it is significantly reduced after adding PTM. Through these methods, the author successfully improved the performance and stability of B - γ - CsSnI₃ - based PSCs, providing new ideas for the development of lead - free tin - halide perovskite solar cells.