Simultaneous dual-interface and bulk defect passivation for high-efficiency and stable CsPbI2Br perovskite solar cells

Huan Zhao,Zhuo Xu,Yuhang Che,Yu Han,Shaomin Yang,Chenyang Duan,Jian Cui,Songyuan Dai,Zhike Liu,Shengzhong Liu,Shengzhong (Frank) Liu
DOI: https://doi.org/10.1016/j.jpowsour.2021.229580
IF: 9.2
2021-04-01
Journal of Power Sources
Abstract:<p>All-inorganic CsPbI<sub>2</sub>Br is a promising candidate to produce the optimized balance between efficiency and stability. Unfortunately, the CsPbI<sub>2</sub>Br perovskite films prepared by solution methods often show numerous defects on the grain surfaces and a tendency for phase transition. In this work, we discovered that the proper amount of NiI<sub>2</sub> additive enables Ni<sup>2+</sup> doping in the perovskite interstitial lattice, while additional Ni<sup>2+</sup> ions serve as passivation agents on the grain surfaces; in particular, a profiled distribution appears from the film bulk to both the upper and lower surfaces. The special Ni<sup>2+</sup> distribution results in an optimized TiO<sub>2</sub> surface for perovskite growth, better perovskite film quality, superior charge extraction capability, and effective suppression of interfacial recombination. As a result, the CsPbI<sub>2</sub>Br perovskite solar cell (PSC) efficiency is increased to 15.88%, among the highest for its type. Also, the special Ni<sup>2+</sup> distribution endows the PSC with improved moisture tolerance. This work provides a promising strategy to overcome the surface/bulk instability issues common in PSCs.</p>
energy & fuels,materials science, multidisciplinary,electrochemistry,chemistry, physical
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