Abstract:PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth elements such as Sr and Eu can substitute Pb to widen the bandgap of PbSe in heterostructure devices, but they come with challenges such as deteriorating optical and electronic properties, even in dilute concentrations due to their dissimilar atomic nature. We substitute Pb instead with column-IV Ge and assess the potential of rocksalt phase PbGeSe as a wider bandgap semiconductor in thin films grown by molecular beam epitaxy on GaAs substrates. Low sticking of GeSe adatoms requires synthesis temperatures below 260 °C to incorporate Ge, but this yields poor structural and compositional uniformity as determined by X-ray diffraction. Consequently, as-grown films in the range Pb0.94Ge0.06Se to Pb0.83Ge0.17Se (6-17% Ge) show much less bandgap widening in photoluminescence than prior work on bulk crystals using absorption. We observe that post-growth rapid thermal annealing at temperatures of 375-450 °C improves the crystal quality and recovers bandgap widening. Rapid interdiffusion of Ge during annealing, however, remains a challenge in harnessing such PbGeSe materials for compositionally sharp heterostructures. Annealed 17%-Ge films emit light at 3-3.1 um with minimal shift in wavelength versus temperature. These samples are wider in bandgap than PbSe films by 55 meV at room temperature and the widening increases to 160 meV at 80 K, thanks to sharply different dependence of bandgap on temperature in PbSe and PbGeSe.

Microstructure and optical properties of PbSe nanocrystalline films prepared by magnetron sputtering

Microstructure and Optical Properties of Pb_(1-x)Sr_xSe Thin Films

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Enhanced Thermoelectric Properties of SnSe Thin Films Grown by Pulsed Laser Glancing-Angle Deposition

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

Band Gaps, Effective Masses and Refractive Indices of Pbsrse Thin Films: Key Properties for Mid-Infrared Optoelectronic Device Applications

Optical Properties of Pb1-Xmnxse Thin Films

Photoelectric properties of PbSe/BaF2/CaF2 films on Si (lll)

Excitonic Line Broadening in Pbsrse Thin Films Grown by Molecular Beam Epitaxy

Raman Scattering Study Of Pbse Grown On (111) Baf2 Substrate

Effect of Holding Time on Structure and Optical Properties of PbSe Films Deposited in a Chemical Bath on Si(100) Substrates

Improvement of the Thermoelectric Power Factor Through Anisotropic Growth of Nanostructured PbSe Thin Films.

Photoelectric Properties Of Pbse/Baf2/Caf2 Films On Si(111)

Preparation and Optical Properties of Dispersible ZnSe Nanocrystals Synthesized by High Energy Ball Milling

Effect of Temperature on Visible Photoluminescence of Thermally Annealed PbSe Nanocrystalline Films

Luminescence and optical constant of ZnSe/SiO2 composite thin films

XRD Analysis of PbTe Thin Films Prepared by RF Magnetron Sputtering

The impact of chemical treatment on optical and electrical characteristics of multipod PbSe nanocrystal films

Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared

A novel two-step radiation route to PbSe crystalline nanorods

Electrical Performance Enhancement by Resonant States in PbSe Single-Crystal Growth Via Bi-flux Method