Editorial for the Special Issue on State-of-the-Art CMOS and MEMS Devices

Zhiming Chen

DOI: https://doi.org/10.3390/mi15030327

IF: 3.4

2024-02-28

Micromachines

Abstract:Complementary Metal Oxide Semiconductor (CMOS) and Micro-Electro-Mechanical System (MEMS) devices play significant roles in emerging research fields such as artificial intelligence (AI) [...]

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

The paper primarily introduces a special issue on "State-of-the-Art CMOS and MEMS Devices," which compiles 10 research articles (9 research papers and 1 review paper) aimed at addressing the demands of high-performance CMOS integrated circuits (ICs) and microelectromechanical systems (MEMS) devices. Specifically, these articles explore the following aspects:

1. **RF Front-End Devices**:
- A broadband low-noise amplifier (LNA) with no inductors and adjustable gain is proposed, suitable for multi-standard wireless communication systems.
- The impact of humidity conditions on the performance of power amplifiers (PAs) is studied, and the reasons for performance degradation are analyzed.
- A review of CMOS RF PA design techniques is provided, focusing on efficiency, linearity, and bandwidth enhancement.

2. **Full-Duplex Communication and Millimeter-Wave Technology**:
- A non-magnetic on-chip passive circulator for the Ku-band is designed and implemented.
- A D-band direct conversion IQ receiver with an on-chip frequency multiplier chain is developed to further advance CMOS ICs in the millimeter-wave range.

3. **Ultra-Low Power Analog Multiplier-Divider**:
- An ultra-low power analog multiplier-divider compatible with digital code words is proposed, suitable for RRAM-based in-memory computing macrostructures.

4. **Electromagnetic Interference (EMI) Impact**:
- The impact of electromagnetic interference injected through the power port on the performance of operational amplifiers (op-amps) is evaluated, and a conduction sensitivity threshold rule is proposed.

5. **Hot Carrier Degradation (HCD)**:
- A compact physical model is developed to describe hot carrier degradation phenomena under different gate-source and drain-source voltages.

6. **Integrated Passive Devices (IPDs)**:
- New integrated passive devices utilizing through-silicon via (TSV) structures are proposed, including capacitors, inductors, and band-pass filters.

7. **Miniature Laser Communication Terminal**:
- A laser scanning capture model based on MEMS micromirrors is proposed to meet the needs of space laser communication and satellite internet constellations.

These research findings showcase the latest advancements in the field of CMOS and MEMS devices, providing valuable references for future academic research and technological development.