Special Issue “building Three-Dimensional Integrated Circuits and Microsystems”

Zhiyuan Zhu,Sixiang Zhang,Shenglin Ma,Ziyu Liu

DOI: https://doi.org/10.3390/pr11030816

IF: 3.5

2023-01-01

Processes

Abstract:With the further innovation of chip technology, semiconductor integrated circuits have made irreplaceable contributions to the development of microelectronic systems [...]

What problem does this paper attempt to address?

Integrated Circuits for Communications

Charles Chien,Zhiwei Xu

DOI: https://doi.org/10.1109/mcom.2017.8067700

IF: 9.03

2017-01-01

IEEE Communications Magazine

Abstract:The articles in this special section highlight the recent progress in the integrated circuits design of 3D imagers based on optical and microwave circuits to support high resolution imaging for various applications such as in-home spectroscopy for personal health diagnostics to meet the needs of aging populations.
Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Tahir Hussain,Dana C. Wheeler,Hasan Sharifi,Keisuke Shinohara,Zhiwei Xu,James C. Li,Pamela R. Patterson,Kenneth R. Elliott,Wonill Ha,Yakov Royter,Peter D. Brewer

DOI: https://doi.org/10.1109/sirf.2014.6828535

2014-01-01

Abstract:HRL Laboratories is part of an intense research and development effort to leverage the enormously advanced infrastructure of Si CMOS and the high performance of diverse electronic and photonic devices in an integrated technology. While System in a Package (SiP) and System on a Chip (SoC) approaches involve chips produced in their native foundries and subsequent integration using hybridization or multi-chip modules, HRL has pioneered approaches where partially completed wafers of diverse technologies are integrated using highly intimate placement and heterogeneous interconnects to enable transistor-level integration. Novel ICs have been produced in InP BiCMOS and CMOS memristor-integrated technologies. Unprecedented design flexibility is being enabled with intimate integration of GaN HEMTs together with InP and CMOS.
Three-dimensional Integrated Circuits: Design, EDA, and Architecture

Guangyu Sun,Yibo Chen,Xiangyu Dong,Jin Ouyang,Yuan Xie

DOI: https://doi.org/10.1561/1000000016

2011-01-01

Foundations and Trends® in Electronic Design Automation

Abstract:The emerging three-dimensional (3D) integration technology is one of the promising solutions to overcome the barriers in interconnection scaling, thereby offering an opportunity to continue performance improvements using CMOS technology. As the fabrication of 3D integrated circuits has become viable, developing CAD tools and architectural techniques are imperative for the successful adoption of 3D integration technology. In this article, we first give a brief introduction on the 3D integration technology, and then review the EDA challenges and solutions that can enable the adoption of 3D ICs, and finally present design and architectural techniques on the application of 3D ICs, including a survey of various approaches to design future 3D ICs, leveraging the benefits of fast latency, higher bandwidth, and heterogeneous integration capability that are offered by 3D technology.
Microsystems Using Three-Dimensional Integration and TSV Technologies: Fundamentals and Applications

Zheyao Wang

DOI: https://doi.org/10.1016/j.mee.2019.03.009

IF: 2.3

2019-01-01

Microelectronic Engineering

Abstract:As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias (TSV) to electrically connect the wafers, have greatly promoted the technological advances and market development of MEMS in the past ten years. 3D integration enables heterogeneous integration of MEMS and IC chips fabricated with different technologies and materials, and thus permits the realization of integrated, sophisticated, and multifunctional microsystems with high performance, low cost, and compact size. This paper first introduces the fundamental fabrication technologies of 3D integration, and then reviews the recent progresses of MEMS and microsystems using 3D integration and TSV technologies. MEMS-CMOS integration, TSV-based wafer level packaging, 2.5D interposer integration of MEMS are illustrated with academic achievements and commercial products by functional categorization. Finally the conclusions are made and the future trends are discussed. © 2008 Elsevier B.V. All rights reserved.
Three-Dimensional Integrated Circuits and the Future of System-on-Chip Designs

R.S. Patti

DOI: https://doi.org/10.1109/jproc.2006.873612

IF: 20.6

2006-06-01

Proceedings of the IEEE

Abstract:Three-dimensional integrated circuits (3-D ICs) offer significant improvements over two-dimensional circuits, and promise a solution to the severe problems that are being, and will be, encountered as monolithic process geometries are reduced to below 65 nm. Several methods associated with the fabrication of 3-D ICs are discussed in this paper, and the techniques developed by Tezzaron Semiconductor Corp., are described in detail. Four successful 3-D ICs are described, along with the anticipated benefits of applying 3-D design to future system-on-chip (SoC) devices.

engineering, electrical & electronic
Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

Yue Hao,Huaqiang Wu,Yuchao Yang,Qi Liu,Xiao Gong,Genquan Han,Ming Li

DOI: https://doi.org/10.1088/1674-4926/42/2/020101

2021-01-01

Abstract:1School of Microelectronics, Xidian University, Xi’an 710071, China 2Institute of Microelectronics, Tsinghua University, Beijing 100084, China 3Department of Micro/nanoelectronics, Peking University, Beijing 100871, China 4Frontier Institute of Chip and System, Fudan University, Shanghai 200438, China 5Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117546, Singapore 6Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Three-Dimensional Integrated Circuits Design for Thousand-Core Processors: From Aspect of Thermal Management

Chiao-Ling Lung,Jui-Hung Chien,Yung-Fa Chou,Ding-Ming Kwai,Shih-Chieh Chang

DOI: https://doi.org/10.5772/26916

2012-01-20

VLSI Design

Abstract:Three-Dimensional Integrated Circuits Design for Thousand-Core Processors: From Aspect of Thermal Management | InTechOpen, Published on: 2012-01-20. Authors: Chiao-Ling Lung, Jui-Hung Chien, Yung-Fa Chou, et
Mono 3 D to Develop Large-Scale Monolithic 3 D Integrated Circuits

Chen Yan,Scott Kontak,Hailang Wang,Emre Salman

2017-01-01

Abstract:Monolithic three-dimensional (3D) integrated circuits (ICs) achieve ultra-high density device integration through fine-grained connectivity enabled by monolithic inter-tier vias (MIVs). In this paper, an open source standard cell library for design automation of large-scale transistor-level monolithic 3D ICs is proposed. A 128-point, highly parallelized FFT core with 330K cells is implemented with the proposed library. Power and timing characteristics of monolithic 3D ICs are quantified. The effect of signal integrity and routing congestion on timing characteristics is investigated. The primary clock tree characteristics of monolithic 3D ICs are also discussed. The proposed open source cell library facilitates future research on multiple aspects of monolithic 3D technology.
Recent Advances in Electromagnetic Compatibility of 3D-Ics — Part II

Etienne Sicard,Wu Jianfei,R. J. Shen,Er-Ping Li,En-Xiao Liu,J. Kim,Jonghyun Cho,Madhavan Swaminathan

DOI: https://doi.org/10.1109/memc.2016.7477137

2016-01-01

IEEE Electromagnetic Compatibility Magazine

Abstract:This second part addresses a selection of topics related to Electromagnetic interference (EMI) issues in three-dimensional integrated components. Details about Through Silicon Via TSV) technology, modelling and parasitic effects are introduced in the first part, then key concepts such as signal integrity (SI), power integrity (PI), and Electromagnetic Interference are introduced.
Editorial for the Special Issue on State-of-the-Art CMOS and MEMS Devices

Zhiming Chen

DOI: https://doi.org/10.3390/mi15030327

IF: 3.4

2024-02-28

Micromachines

Abstract:Complementary Metal Oxide Semiconductor (CMOS) and Micro-Electro-Mechanical System (MEMS) devices play significant roles in emerging research fields such as artificial intelligence (AI) [...]

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
3-D Integration and Through-Silicon Vias in MEMS and Microsensors

Zheyao Wang

DOI: https://doi.org/10.1109/jmems.2015.2448681

IF: 2.829

2015-01-01

Journal of Microelectromechanical Systems

Abstract:After two decades of intensive development, 3-D integration has proven invaluable for allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink feature sizes. The 3-D integration is also an enabling technology for hetero-integration of microelectromechanical systems (MEMS)/microsensors with different technologies, such as CMOS and optoelectronics. This 3-D hetero-integration allows for the development of highly integrated multifunctional microsystems with small footprints, low cost, and high performance demanded by emerging applications. This paper reviews the following aspects of the MEMS/microsensor-centered 3-D integration: fabrication technologies and processes, processing considerations and strategies for 3-D integration, integrated device configurations and wafer-level packaging, and applications and commercial MEMS/microsensor products using 3-D integration technologies. Of particular interest throughout this paper is the hetero-integration of the MEMS and CMOS technologies.
Heterogeneous integration of nano enabling devices for 3D ICs

Li Wang,Rui Ma,Chen Zhang,Zongyu Dong,Xin Wang,Zitao Shi,Jian Liu,Lin Lin,Hui Zhao,Fei Lu,Qiang Fang,Chen Yang,Jing Zhan,Tianling Ren,Xinxin Li,Ru Huang,Albert Z. Wang

DOI: https://doi.org/10.1109/ISLPED.2013.6629304

2013-01-01

Abstract:For decades, advances in integrated circuits (IC) have been driven by continuous scaling down of planar IC technologies. As IC scaling rapidly approaches to technical brick wall, 3D IC heterogeneous integration emerges as a viable solution for future integrated electronics. Future complex system-on-a-chip (SoC) requires high-performance active devices, and novel passive and supporting devices. This paper reviews recent advances in develop 3D magnetic-enhanced inductors and 3D on-chip electrostatic discharging (ESD) structures to achieve heterogeneous 3D ICs with high performance and reliability simultaneously.
Fine Grain 3D Integration for Microarchitecture Design Through Cube Packing Exploration.

Yongxiang Liu,Yuchun Ma,Eren Kursun,Glenn Reinman,Jason Cong

DOI: https://doi.org/10.1109/iccd.2007.4601911

2007-01-01

Abstract:Most previous 3D IC research focused on "stacking" traditional 2D silicon layers, so the interconnect reduction is limited to interblock delays. In this paper, we propose techniques that enable efficient exploration of the 3D design space where each logical block can span more than one silicon layers. Although further power and performance improvement is achievable through fine grain 3D integration, the necessary modeling and tool infrastructure has been mostly missing. We develop a cube packing engine which can simultaneously optimize physical and architectural design for effective utilization of 3D in terms of performance, area and temperature. Our experimental results using a design driver show 36% performance improvement (in BIPS) over 2D and 14% over 3D with single layer blocks. Additionally multi-layer blocks can provide up to 30% reduction in power dissipation compared to the single-layer alternatives. Peak temperature of the design is kept within limits as a result of thermal-aware floorplanning and thermal via insertion techniques.
Challenges and recent prospectives of 3D heterogeneous integration

Shuye Zhang,Zhenfeng Li,Hongzhi Zhou,Rongqing Li,Shaoan Wang,Kyung-Wook Paik,Peng He

DOI: https://doi.org/10.1016/j.prime.2022.100052

2022-01-01

e-Prime - Advances in Electrical Engineering, Electronics and Energy

Abstract:With the continuous reduction of chip feature size, the continuation of Moore's Law becomes increasingly difficult and heterogeneous integration has become one of the important orientations of electronic technology. Focusing on the issues including system integration and interconnection in submicron to 10 μm orders of magnitude, 3D heterogeneous integration formed by multiple chip connections on package substrates supported by active through-silicon vias breaks the scale barrier from micro-nano technology to system integration at the acceptable cost. 3D heterogeneous integration is gradually developing towards 3D stacking, multi-function integration and hybrid heterogeneous integration, which makes integrated products have the advantages of high integration, low power consumption, miniaturization and high reliability. This paper summarizes the development of 3D heterogeneous integration, the current researches as well as the fields and prospects of application.
Three-Dimensional Silicon Electronic Systems Fabricated by Compressive Buckling Process

Bong Hoon Kim,Jungyup Lee,Sang Min Won,Zhaoqian Xie,Jan-Kai Chang,Yongjoon Yu,Youn Kyoung Cho,Hokyung Jang,Ji Yoon Jeong,Yechan Lee,Arin Ryu,Do Hoon Kim,Kun Hyuck Lee,Jong Yoon Lee,Fei Lu,Xueju Wang,Qingze Huo,Seunghwan Min,Di Wu,Bowen Ji,Anthony Banks,Jeonghyun Kim,Nuri Oh,Hyeong Min Jin,Seungyong Han,Daeshik Kang,Chi Hwan Lee,Young Min Song,Yihui Zhang,Yonggang Huang,Kyung-In Jang,John A. Rogers

DOI: https://doi.org/10.1021/acsnano.8b00180

IF: 17.1

2018-01-01

ACS Nano

Abstract:Recently developed approaches in deterministic assembly allow for controlled, geometric transformation of two-dimensional structures into complex, engineered three-dimensional layouts. Attractive features include applicability to wide ranging layout designs and dimensions along with the capacity to integrate planar thin film materials and device layouts. The work reported here establishes further capabilities for directly embedding high-performance electronic devices into the resultant 3D constructs based on silicon nanomembranes (Si NMs) as the active materials in custom devices or microscale components released from commercial wafer sources. Systematic experimental studies and theoretical analysis illustrate the key ideas through varied 3D architectures, from interconnected bridges and coils to extended chiral structures, each of which embed n-channel Si NM MOSFETs (nMOS), Si NM diodes, and p-channel silicon MOSFETs (pMOS). Examples in stretchable/deformable systems highlight additional features of these platforms. These strategies are immediately applicable to other wide-ranging classes of materials and device technologies that can be rendered in two-dimensional layouts, from systems for energy storage, to photovoltaics, optoelectronics, and others.
Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

Xinghuan Chen,Fangzhou Wang,Zirui Wang,Zeheng Wang,Jing-Kai Huang

DOI: https://doi.org/10.3390/mi15121422

IF: 3.4

2024-11-28

Micromachines

Abstract:The field of semiconductor research is experiencing a paradigm shift as the boundaries of Moore's Law are being approached [...]

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Recent Progress of Integrated Circuits and Optoelectronic Chips

Hao Yue,Xiang Shuiying,Han Genquan,Zhang Jincheng,Ma Xiaohua,Zhu Zhangming,Guo Xingxing,Zhang Yahui,Han Yanan,Song Ziwei,Liu Yan,Yang Ling,Zhou Hong,Shi Jiangyi,Zhang Wei,Xu Min,Zhao Weisheng,Pan Biao,Huang Yangqi,Liu Qi,Cai Yimao,Zhu Jian,Ou Xin,You Tiangui,Wu Huaqiang,Gao Bin,Zhang Zhiyong,Origin Quantum Computing Company Limited,Chen Yonghua,Liu Yong,Chen Xiangfei,University of Chinese Academy of Sciences,Wang Xingjun,Zhao Lixia,Zou Xihua,Yan Lianshan

DOI: https://doi.org/10.1007/s11432-021-3235-7

2021-01-01

Science China Information Sciences

Abstract:Integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore’s law" in the past 60 years, and now has entered the post Moore’s law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.
Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

Max M. Shulaker,Gage Hills,Rebecca S. Park,Roger T. Howe,Krishna Saraswat,H.-S. Philip Wong,Subhasish Mitra

DOI: https://doi.org/10.1038/nature22994

IF: 64.8

2017-07-01

Nature

Abstract:Multiple nanotechnologies are integrated on a single chip to realize a three-dimensional integrated circuit architecture that combines computing and data storage—a potentially transformative advance in computing.

multidisciplinary sciences
Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Rahul Pendurthi,Najam U Sakib,Muhtasim Ul Karim Sadaf,Zhiyu Zhang,Yongwen Sun,Chen Chen,Darsith Jayachandran,Aaryan Oberoi,Subir Ghosh,Shalini Kumari,Sergei P Stepanoff,Divya Somvanshi,Yang Yang,Joan M Redwing,Douglas E Wolfe,Saptarshi Das

DOI: https://doi.org/10.1038/s41565-024-01705-2

Abstract:The semiconductor industry is transitioning to the 'More Moore' era, driven by the adoption of three-dimensional (3D) integration schemes surpassing the limitations of traditional two-dimensional scaling. Although innovative packaging solutions have made 3D integrated circuits (ICs) commercially viable, the inclusion of through-silicon vias and microbumps brings about increased area overhead and introduces parasitic capacitances that limit overall performance. Monolithic 3D integration (M3D) is regarded as the future of 3D ICs, yet its application faces hurdles in silicon ICs due to restricted thermal processing budgets in upper tiers, which can degrade device performance. To overcome these limitations, emerging materials like carbon nanotubes and two-dimensional semiconductors have been integrated into the back end of silicon ICs. Here we report the M3D integration of complementary WSe2 FETs, in which n-type FETs are placed in tier 1 and p-type FETs are placed in tier 2. In particular, we achieve dense and scaled integration through 300 nm vias with a pitch of <1 µm, connecting more than 300 devices in tiers 1 and 2. Moreover, we have effectively implemented vertically integrated logic gates, encompassing inverters, NAND gates and NOR gates. Our demonstration highlights the two-dimensional materials' role in advancing M3D integration in complementary metal-oxide-semiconductor circuits.
Investigating the Effects of Fine-Grain Three-Dimensional Integration on Microarchitecture Design

Yuchun Ma,Yongxiang Liu,Eren Kursun,Glenn Reinman,Jason Cong

DOI: https://doi.org/10.1145/1412587.1412590

IF: 2.013

2008-01-01

ACM Journal on Emerging Technologies in Computing Systems

Abstract:In this article we propose techniques that enable efficient exploration of the 3D design space, where each logical block can span more than one silicon layer. Fine-grain 3D integration provides reduced intrablock wire delay as well as improved power consumption. However, the corresponding power and performance advantage is usually underutilized, since various implementations of multilayer blocks require novel physical design and microarchitecture infrastructure to explore 3D microarchitecture design space. We develop a cubic packing engine which can simultaneously optimize physical and architectural design for efficient vertical integration. This technique selects the individual unit designs from a set of single-layer or multilayer implementations to get the best microarchitectural design in terms of performance, temperature, or both. Our experimental results using a design driver of a high-performance superscalar processor show a 36% performance improvement over traditional 2D for 2--4 layers and 14% over 3D with single-layer unit implementations. Since thermal characteristics of 3D integrated circuits are among the main challenges, thermal-aware floorplanning and thermal via insertion techniques are employed to keep the peak temperatures below threshold.

Special Issue “building Three-Dimensional Integrated Circuits and Microsystems”

Integrated Circuits for Communications

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Three-dimensional Integrated Circuits: Design, EDA, and Architecture

Microsystems Using Three-Dimensional Integration and TSV Technologies: Fundamentals and Applications

Three-Dimensional Integrated Circuits and the Future of System-on-Chip Designs

Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

Three-Dimensional Integrated Circuits Design for Thousand-Core Processors: From Aspect of Thermal Management

Mono 3 D to Develop Large-Scale Monolithic 3 D Integrated Circuits

Recent Advances in Electromagnetic Compatibility of 3D-Ics — Part II

Editorial for the Special Issue on State-of-the-Art CMOS and MEMS Devices

3-D Integration and Through-Silicon Vias in MEMS and Microsensors

Heterogeneous integration of nano enabling devices for 3D ICs

Fine Grain 3D Integration for Microarchitecture Design Through Cube Packing Exploration.

Challenges and recent prospectives of 3D heterogeneous integration

Three-Dimensional Silicon Electronic Systems Fabricated by Compressive Buckling Process

Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

Recent Progress of Integrated Circuits and Optoelectronic Chips

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Investigating the Effects of Fine-Grain Three-Dimensional Integration on Microarchitecture Design