Abstract:Single crystalline materials, different from polycrystalline and twinning structures, are desired for investigating the intrinsic physical properties, as grain and twin boundaries often work as a source of artifacts. Bismuth chalcogenides, which are van der Waals materials notable as topological insulators, have attracted significant interest due to their rich physical properties. However, the formation of 60° twin domains is common in these materials. Here, we demonstrate single-domain bismuth chalcogenides. Using atomic force microscopy, we investigated the morphology of Bi2Se3 and Bi2Te3 grown on Al2O3. Despite lattice constants of Bi2Se3 and Al2O3 substrates being well matched with hybrid symmetry epitaxy, Bi2Se3 exhibited 60° twin boundaries across the surface. Interestingly, Bi2Te3 showed a single-domain feature across the 10 mm by 10 mm sample even with lattice mismatch. While further in-depth studies are required to understand this difference in the morphology between Bi2Se3/Al2O3 and Bi2Te3/Al2O3, we suggest that the formation of twin boundaries in bismuth chalcogenides is related to the interaction between quintuple layers across the van der Waals gap rather than strain or defects.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve a single - domain structure in the topological insulator material bismuth telluride (Bi₂Te₃) thin film, so as to avoid the influence of twin - crystal boundaries on the study of the intrinsic physical properties of the material. Specifically, the authors grew Bi₂Te₃ and Bi₂Se₃ thin films on sapphire (Al₂O₃) substrates by molecular beam epitaxy (MBE) technology, and studied the surface morphologies of these thin films using atomic force microscopy (AFM). The study found that although the Bi₂Se₃ thin film exhibited randomly mixed 60° twin - crystal boundaries, the Bi₂Te₃ thin film showed a single - domain structure within a range of 10 mm × 10 mm, with almost no twin - crystal boundaries. This finding is helpful for further understanding the formation mechanism of twin - crystal boundaries in bilayer materials, especially the differences between Bi₂Te₃ and Bi₂Se₃, thereby providing a theoretical basis for optimizing the applications of these materials in thermoelectricity, spintronics and other fields. ### Main problems: 1. **Avoiding the influence of twin - crystal boundaries**: Twin - crystal boundaries will introduce additional physical properties and mask the inherent properties of the material. Therefore, achieving a single - domain structure without twin - crystal boundaries is crucial for studying the intrinsic physical properties of the material. 2. **Exploring the differences between Bi₂Te₃ and Bi₂Se₃**: Although both belong to bilayer materials, under the same growth conditions, Bi₂Te₃ can form a single - domain structure, while Bi₂Se₃ cannot. The authors attempted to explain the reasons for this difference, especially from the perspective of atomic interactions in the van der Waals gap (vdW gap). ### Solutions: - **Experimental method**: Use molecular beam epitaxy (MBE) technology to grow Bi₂Te₃ and Bi₂Se₃ thin films on sapphire substrates. - **Characterization means**: Study the surface morphologies and crystal structures of the thin films by atomic force microscopy (AFM) and X - ray diffraction (XRD) techniques. - **Theoretical analysis**: Explore the influence of atomic interactions in the van der Waals gap on the formation of twin - crystal boundaries, especially the differences in the van der Waals bond strengths between Te - Te and Se - Se. ### Conclusion: The authors found that the Bi₂Te₃ thin film can maintain a single - domain structure within a range of 10 mm × 10 mm, while the Bi₂Se₃ thin film has a large number of 60° twin - crystal boundaries. This difference may be related to the van der Waals bond strength between Te - Te and Se - Se. The stronger Te - Te interaction makes the Bi₂Te₃ thin film more stable and less likely to form twin - crystal boundaries. These findings provide an important theoretical basis for optimizing the performance of topological insulator materials.

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