Abstract:Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime is however increasingly becoming a bottleneck toward their practical deployment for these applications. To address this issue, we performed a systematic study elucidating the cycling failure mechanisms of Ge$_2$Sb$_2$Se$_4$Te (GSST), a common optical PCM tailored for infrared photonic applications, in an electrothermal switching configuration commensurate with their applications in on-chip photonic devices. We further propose a set of design rules building on insights into the failure mechanisms, and successfully implemented them to boost the endurance of the GSST device to over 67,000 cycles.

What problem does this paper attempt to address?

The paper aims to address the issue of short cycling life of chalcogenide optical phase change materials (PCMs) in practical applications. Specifically: - **Research Background**: Chalcogenide optical phase change materials have garnered significant attention due to their wide applications in programmable photonics, optical analog computing, active metasurfaces, and more. However, limited durability or cycling life has become a bottleneck in these applications. - **Research Objective**: By systematically studying the cycling failure mechanisms of Ge₂Sb₂Se₄Te (GSST), a common phase change material for infrared photonic applications, a set of design rules was proposed and successfully applied to enhance the durability of GSST devices, achieving over 67,000 cycles. - **Main Findings**: - Investigated the impact of encapsulation layer materials (such as alumina and silicon nitride) and their thickness on PCM performance. - Explored the design and optimization strategies of metal contact materials to reduce delamination between PCM and encapsulation layers. - Identified that elemental migration due to inconsistent melting is the primary cause of optical contrast degradation. - **Improvement Measures**: - Employed a dual-layer encapsulation structure (ALD alumina and sputtered silicon nitride) to enhance the durability of the encapsulation layer. - Optimized electrical pulse parameters to dynamically adjust and maintain consistent optical contrast of PCM devices. - Designed a 2D lattice structure to minimize the risk of delamination and PCM shrinkage. In summary, the paper significantly improves the cycling life of chalcogenide optical phase change materials through in-depth research and optimization of various factors.

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