Abstract:In this work, a nonvolatile and electrically reconfigurable hybrid PCM‐silicon photonic platform is designed with ITO heater based on phase‐change‐materials (Sn‐GST). The prepared photonic device exhibits an ultrahigh endurance (≈30 000 cycles) and extinction ratio (≈50 dB). This work solves the endurance issue of PCM‐integrated photonic devices based on ITO heater (<20 cycles). Phase‐change‐materials (PCMs) integrated photonics have attracted extensive attention in the field of optical neural networks. However, present PCMs‐integrated photonics are still far from meeting the requirements in real‐world applications due to its unsatisfactory endurance (<3000 cycles) and extinction ratio (ER 30 000 cycles) and large ER (≥50 dB) are achieved in the photonic device by introducing a trench structure to the indium tin oxide (ITO) heater and utilizing tin‐doped Ge2Sb2Te5 (Sn‐GST) as PCMs. This performance represents a landmark in the PCMs‐integrated photonics, since it solves the problem of poor endurance of ITO heaters and can be comparable to the state‐of the‐art devices in terms of endurance and ER. This excellent endurance and ER stem from the trench structure and high optical contrast PCM of Sn‐GST. Trench structure improves the heating efficiency of the ITO heater and effectively alleviates the thermal stress imposed on the ITO heater, resulting in ultrahigh endurance of the device. Sn‐doping is also beneficial to the endurance and ER improvement, because it can effectively reduce the crystallization temperature and increase the absorption coefficient of the PCM layer. This work provides a new technology for the development of programmable photonics with ultrahigh endurance.

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge2Sb2Se4Te

Unravelling and circumventing failure mechanisms in chalcogenide optical phase change materials

Performance Limits of Phase Change Integrated Photonics

Robust electrothermal switching of optical phase change materials through computer-aided adaptive pulse optimization

Chalcogenides Phase Change Materials for PICs

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

First-principles Investigation of Amorphous Ge-Sb-Se-Te Optical Phase-Change Materials

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

A scheme for simulating multi-level phase change photonics materials

Extreme Broadband Transparent Optical Phase Change Materials for High-Performance Nonvolatile Photonics

Solution-derived Ge-Sb-Se-Te phase-change chalcogenide films

A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

Multiscale Simulations of Growth-Dominated Sb2Te Phase-Change Material for Non-Volatile Photonic Applications

Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications

Spatial and temporal control of glassy‐crystalline domains in optical phase change materials

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation.

Toward accurate thermal modeling of phase change material based photonic devices

Multiscale simulations of growth-dominated Sb$_2$Te phase-change material for non-volatile photonic applications

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications