Abstract:To describe the polar properties of the nanosized HfxZr1-xO2-y, we evolve the "effective" Landau-Ginzburg-Devonshire (LGD) model based on the parametrization of the Landau expansion coefficients for the polar and antipolar orderings. We have shown that the effective LGD model can predict the influence of screening conditions and size effects on phase diagrams, polarization reversal and structural properties of the nanosized HfxZr1-xO2-y of various shape and sizes. To verify the model, we use available experimental results for HfxZr1-xO2 thin films and oxygen-deficient HfO2-y nanoparticles prepared at different annealing conditions. X-ray diffraction, which was used to determine the phase composition of the HfO2-y nanoparticles, revealed the formation of the ferroelectric orthorhombic phase in them. Micro-Raman spectroscopy was used to explore the correlation of lattice dynamics and structural changes appearing in dependence on the oxygen vacancies concentration in the HfO2-y nanoparticles. Since our approach allows to determine the conditions (shape, sizes, Zr content and/or oxygen vacancies amount) for which the nanosized HfxZr1-xO2-y are ferroelectrics or antiferroelectrics, we hope that obtained results are useful for creation of next generation of Si-compatible ferroelectric gate oxide nanomaterials.

What problem does this paper attempt to address?

The paper mainly discusses the phase diagram and polarization reversal phenomenon of HfxZr1-xO2-y materials at the nanoscale. The study is based on the "effective" Landau-Ginzburg-Devonshire (LGD) model, which describes the properties of materials by parameterizing the polarization and antipolarization-ordered Landau expansion coefficients. In the paper, the authors demonstrate how to predict the effects of different sizes, shapes, zirconium contents, and oxygen vacancies on the phase diagram and polarization reversal, and validate the model with experimental data. Researchers found that the polarization characteristics of HfxZr1-xO2-y nanoparticles are influenced by surface and grain boundary energies as well as oxygen vacancies. They determined the phase composition of oxygen-deficient HfO2-y nanocrystals by X-ray diffraction, revealing the formation of orthorhombic phases with ferroelectricity. Micro-Raman spectroscopy was used to explore the relationship between lattice dynamics, structural changes, and oxygen vacancy concentration. The paper further utilizes the LGD model to calculate the polarization hysteresis curves and phase diagrams under different conditions, indicating that the phase state (ferroelectric or antiferroelectric) of nanomaterials can be regulated by controlling composition, size, oxygen vacancy quantity, and other conditions. These results are of significant importance for the development of next-generation silicon-compatible ferroelectric gate oxide nanomaterials. In the experimental section, the authors analyzed HfO2-y nanocrystals prepared under different annealing conditions through X-ray diffraction and Raman spectroscopy, confirming that oxygen vacancies can promote the formation of ferroelectric orthorhombic phases, which is crucial for understanding and optimizing the applications of these materials in advanced FeRAMs and FET technologies.

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