Abstract:In this work we focus on the simulation of radiation effects on silicon under proton irradiation at different scales. Two models of the Monte Carlo displacement damage calculation method in the Particle and Heavy Ion Transport code System (PHITS) were first used: the Torrens displacements per atom (NRT-DPA) model and a thermal recombination corrected dpa (arc-DPA), the prediction result of the final arc-DPA model is about 1/3 lower than the traditional NRT-DPA model; we also compared the difference between the two calculated values at the same dose of irradiation. When presenting a molecular dynamics study of the generation and evolution of silicon defects under irradiation, we simulated a 10 keV displacement cascade at room temperature. By post-processing the simulation results, the changes in the distribution and number of defects, as well as the evolution of defect clusters, were analyzed, where both the number of point defects and vacancy clusters show a tendency to increase and then decrease. Finally, first-principles were used to simulate and analyze the energy band structures , DOS, effective mass, the dielectric function, reflection and transmission spectra of silicon after introduction of defects. In order to obtain more accurate value of the bandgap, the HSE06 hybridization generalization is used so that the bandgap is not underestimated, while the clear bandgap facilitates fine analysis of the band structures of the defect states. We found that although the width of the energy band is reduced, which will lead to a increase of intrinsic carrier concentration. At the same time, the effective mass of the electron and hole are greatly reduced, which ultimately leads to a reduction of carrier mobility, and this will finally cause series of performance degradations.

Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Mechanical and optical property assessment of irradiated SiC with displaced atoms

Atomic-scale revealing defects in ion irradiated 4H-SiC

Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC

Damage production in silicon by MeV Si cluster irradiation

Study of irradiation damage in silicon at different scales

On-demand generation of shallow silicon vacancy in silicon carbide

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

Measurement of swelling-induced residual stress in ion implanted SiC, and its effect on micromechanical properties

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

Driving mechanism of neutron-irradiation-induced amorphization in silicon carbide

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Non-linear characteristics of irradiation damages in silicon by MeV Si clusters